IP Library › Granted Patent US 12,086,270
Granted Patent B2
US 12,086,270 · App. 18/166,365 · Granted Sep 10, 2024

Mediating directed refresh management induced row hammer and row access strobe (RAS) clobber failures

Inventors: Yang Lu (Boise, ID); Markus H. Geiger (Boise, ID); Nathaniel J. Meier (Boise, ID)
Assignee: Micron Technology, Inc.
G06F21/577G06F21/554G11C8/18G11C29/022G11C29/50004G11C29/52G06F2221/034G11C2029/5002
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,086,270
App. No.
18/166,365
Granted
Sep 10, 2024
Kind
B2
Abstract

There are provided systems and methods that include at least one memory that has a plurality of memory cells. The cells may be disposed in rows and columns. The device can further include a controller that is communicatively coupled to the at least one memory, and the controller may be configured by its hardware topology and its instruction set and/or by a communicatively coupled processor or higher-level system or subsystem to maintain data integrity in the at least one memory and/or to prevent or mitigate malicious access patterns that may compromise the at least one memory. The controller may be configured to execute a deterministic protocol in conjunction with or sequentially to a probabilistic protocol to achieve one or more of the above-noted functions.

Claims (43)

1. A memory device comprising:

at least one memory including a plurality of memory cells disposed in rows and columns; and

a controller, communicatively coupled to the at least one memory, the controller maintaining data integrity in the at least one memory by executing operations comprising:

receiving an indication that a row hammer threshold (RHT) has been exceeded;

issuing a first directed refresh management (DRFM) command;

triggering an activation command (ACT) for at least one victim row counter, the at least one victim row counter being associated with at least one row affected by a row hammer event;

executing a base protocol to mitigate the row hammer event;

adding a DRFM mitigation protocol to a queue for execution in response to a new DRFM command being triggered;

determining a most recent victim row of the new DRFM command; and

issuing the first DRFM command if the queue is empty.

2. The memory device of claim 1 , wherein the memory device comprises a DRAM.

3. The memory device of claim 1 , wherein the base protocol includes a probabilistic protocol configured to mitigate a native risk of failure of the memory.

4. The memory device of claim 1 , wherein when controller is configured to mitigate a RH 1 risk (+/1 rows), a RH 2 risk (+/−2 rows), and a RAS clobber risk as risk of failure of the memory.

5. The memory device of claim 2 , wherein the base protocol includes at least one of a RH refresh (RHR) protocol, an address sampling (AS) protocol, and a content addressable memory (CAM) protocol.

6. The memory device of claim 2 , wherein the base protocol includes an activity tracking (AT) protocol.

7. The memory device of claim 1 , wherein the base protocol further includes a native deterministic RH risk mitigation protocol.

8. The memory device of claim 7 , wherein the native deterministic RH risk mitigation protocol is based on a DRFM servicing protocol.

9. The memory device of claim 1 , wherein the base protocol includes at least one of a space saving (SS) RH protocol, a Revised Misra-Grise RH protocol, and a lockout SS RH protocol.

10. The memory device of claim 1 , wherein the base protocol includes a Ping-Pong protocol.

11. A method for mitigating risk of failure in a memory device including at least one memory, the method comprising:

executing, by a controller configured to maintain data integrity in the at least one, operations comprising:

receiving an indication that a Row Hammer Threshold (RHT) has been exceeded;

issuing a first directed refresh management (DRFM) command;

triggering an activation command (ACT) for at least one victim row counter, the at least one victim row counter being associated with at least one row affected by a row hammer event;

executing a base protocol to mitigate the row hammer event;

adding a DRFM mitigation protocol to a queue for execution in response to a new DRFM command being triggered; and

determining a most recent victim row of the new DRFM command and if the queue is empty, issuing the first DRFM command.

12. The method of claim 11 , wherein the memory device comprises a DRAM.

13. The method of claim 11 , wherein the operations further include: executing the base protocol to mitigate a risk of failure selected from the set of failure risks consisting of a Row Hammer (RH) failure risk, and a RAS Clobber failure risk.

14. The method of claim 13 , wherein when the failure risk is a RH failure risk, the deterministic protocol is configured to mitigate a RH1 risk (+/1 rows), a RH2 risk (+/−2 rows), a RAS clobber risk, and an inverse hammer risk.

15. The method of claim 14 , wherein the inverse hammer risk is a DRFM-induced RH failure risk consisting of a RH/3/4 (+/−3, 4) risk.

16. The method of claim 13 , wherein the base protocol includes at least one of a RH refresh (RHR) protocol, an address sampling (AS) protocol, and a content addressable memory (CAM) protocol.

17. The method of claim 13 , wherein the base protocol includes an activity tracking (AT) protocol.

18. The method of claim 11 , wherein the base protocol includes further includes a native deterministic RH risk mitigation protocol; and

wherein the controller is configured is configured to mitigate failure risks deterministically.

19. The method of claim 13 , wherein the controller is configured is configured to mitigate failure risks deterministically in conjunction with addressing native failure risks using a probabilistic mitigation protocol.

20. A non-transitory computer readable medium having stored thereon computer executable instructions that, if executed by a computing device, cause the computing device to perform a method for mitigating risk of failure in a memory device including at least one memory, the method comprising:

executing, by a controller configured to maintain data integrity in the at least one, operations comprising:

receiving an indication that a Row Hammer Threshold (RHT) has been exceeded;

issuing a first directed refresh management (DRFM) command;

triggering an activation command (ACT) for at least one victim row counter, the at least one victim row counter being associated with at least one row affected by a row hammer event;

executing a base protocol to mitigate the row hammer event; adding a DRFM mitigation protocol to a queue for execution in response to a new DRFM command being triggered; and

determining a most recent victim row of the new DRFM command and if the queue is empty, issuing the first DRFM command.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2023
From: LU, YANG; GEIGER, MARKUS H.; MEIER, NATHAN J.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 065202/0262 →
Continuity (3)
Division 18160293 · Jan 26, 2023
Provisional Application 63303550 · Jan 27, 2022
Related Publication 20230268022A1 · Aug 24, 2023