Granted Patent B2

US 12,320,932 · App. 18/168,877 · Granted Jun 3, 2025

Inventor: Florian Wiest (Munich, DE)

Assignee: KETEK GmbH Halbleiter—und Reinraumtechnik

G01T1/241G01T1/2928H01J5/18H01J2235/183

Abstract

Claims (44)

1. A radiation detector comprising:

a semiconductor body having a radiation entrance side configured to detect X-rays;

an electrically conductive window layer areally arranged to the radiation entrance side, the electrically conductive window layer comprising boron and/or carbon, and having a thickness of at most 20 nm; and

an electrically conductive bar structure on the electrically conductive window layer and in an electrical contact with the electrically conductive window layer.

2. The radiation detector according to claim 1 ,

wherein the thickness of the electrically conductive window layer is at most 5 nm,

wherein the electrically conductive bar structure is directly attached to the electrically conductive window layer, and

wherein the electrically conductive window layer is without gaps and has an area of at least 1 mm 2 .

3. The radiation detector according to claim 1 , wherein the electrically conductive window layer comprises graphene.

4. The radiation detector according to claim 1 , wherein the electrically conductive window layer comprises borophene.

5. The radiation detector according to claim 1 , wherein the electrically conductive bar structure is located on a side of the electrically conductive window layer facing away from the semiconductor body.

6. The radiation detector according to claim 1 , wherein the electrically conductive bar structure is located between the semiconductor body and the electrically conductive window layer.

7. The radiation detector according to claim 1 , wherein the electrically conductive bar structure comprises a metal grid such that the electrically conductive bar structure includes bars extending transversely to and parallel to each other.

8. The radiation detector according to claim 7 ,

wherein a distance between at least some of the bars is at least 0.1 μm and at most 1 mm,

wherein a thickness of the bars is at least 20 nm and at most 200 nm, and

wherein a width of the bars is larger than the thickness of the bars by at least a factor of two.

9. The radiation detector according to claim 1 , further comprising a dielectric insulation layer located directly between the semiconductor body and the electrically conductive window layer, at least in regions.

10. The radiation detector according to claim 1 , wherein the electrically conductive window layer is located directly on the radiation entrance side of the semiconductor body, at least in regions.

11. The radiation detector according to claim 1 , wherein the semiconductor body comprises a p-doped layer at the electrically conductive window layer and an n-doped layer at a side of the p-doped layer facing away from the electrically conductive window layer.

12. The radiation detector according to claim 11 ,

wherein the p-doped layer is a p-doped Si layer,

wherein the n-doped layer is an n-doped Si layer, and

wherein the p-doped layer is thinner than the n-doped layer.

13. The radiation detector according to claim 11 , further comprising a first electrode at the n-doped layer and a second electrode at the p-doped layer, wherein the electrically conductive bar structure is electrically connectable independently of the p-doped layer and the n-doped layer such that the electrically conductive window layer and the electrically conductive bar structure form an additional electrode.

14. A radiation detector comprising:

a semiconductor body having a radiation entrance side configured to detect X-rays;

an electrically conductive window layer areally arranged to the radiation entrance side, the electrically conductive window layer comprising boron and/or carbon, and having a thickness of at most 20 nm;

an electrically conductive bar structure on the electrically conductive window layer and in an electrical contact with the electrically conductive window layer,

wherein the semiconductor body is of Si and comprises a p-doped layer at the electrically conductive window layer and an n-doped layer directly at a side of the p-doped layer facing away from the electrically conductive window layer;

a first electrode at the n-doped layer and a second electrode at the p-doped layer,

wherein the electrically conductive window layer and the electrically conductive bar structure form an additional electrode,

wherein the first electrode and the second electrode are configured to lead an electrical charge in the semiconductor body resulting from absorbing the X-rays out of the semiconductor body, and

wherein the additional electrode is configured not to be involved in leading the electrical charge in the semiconductor body resulting from absorbing the X-rays out of the semiconductor body; and

a dielectric insulation layer located between the semiconductor body and the electrically conductive window layer so that the electrically conductive window layer and the additional electrode are not in a direct electrical contact with the semiconductor body.

15. A method for operating the radiation detector according to claim 13 , the method comprising:

applying a first voltage at the first electrode;

applying a second voltage at the second electrode, the second voltage being smaller than the first voltage;

applying a third voltage at the additional electrode for which the following is true: 1.1 V 2 ≤V 3 ≤V 2 ; and

detecting low-energy X-ray radiation.

16. The method according to claim 15 ,

wherein 1.03 V 2 ≤V 3 <1.005 V 2 applies, and

wherein −60 V≤V 2 ≤−120 V and 0.3 V≤|V 2 −V 3 |≤3 V.

17. The method according to claim 15 , wherein an energy of the low-energy X-ray radiation to be detected is between 0.05 keV and 2 keV inclusive.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (24)