Tuning acoustic resonators with back-side coating
A filter device is provided that includes a substrate and a piezoelectric plate attached to the substrate. A conductor pattern is formed at a first surface of the piezoelectric plate and includes interdigital transducers of series and shunt resonators that each have interleaved fingers at respective diaphragms of the plate suspended. A first dielectric coating layer is formed over the interleaved fingers of the IDTs and on the first surface of the piezoelectric plate; and a second dielectric coating layer is formed on the second surface of the piezoelectric plate that is opposite the first surface. The second dielectric coating layer of the shunt resonator has a greater thickness than a thickness of the at least one second dielectric coating layer of the series resonator.
1. A filter device, comprising:
a substrate;
a piezoelectric layer having opposing first and second surfaces and attached to the substrate;
a conductor pattern on the first surface of the piezoelectric layer and including a plurality of interdigital transducers (IDTs) of a plurality of resonators, respectively, that each have interleaved fingers at respective diaphragms of the piezoelectric layer, the diaphragms being suspended over one or more cavities, and the plurality of resonators including a plurality of shunt resonators and a plurality of series resonators in a ladder filter circuit;
at least one first dielectric layer over at least the interleaved fingers of the plurality of IDTs and on the first surface of the piezoelectric layer; and
at least one second dielectric layer on the second surface of the piezoelectric layer that is opposite the first surface,
wherein the at least one second dielectric layer of all of the plurality of shunt resonators has a greater thickness than a thickness of the at least one second dielectric layer of all of the plurality of series resonators, and
wherein the at least one second dielectric layer at each of the plurality of resonators is uniform.
2. The filter device according to claim 1 , wherein the thickness of the at least one second dielectric layer of at least one shunt resonator of the plurality of shunt resonators is configured such that the at least one shunt resonator has a resonance frequency with an anti-resonance that is approximately at a same frequency as the resonance frequency of at least one series resonator of the plurality of series resonators.
3. The filter device according to claim 1 , wherein all of the plurality of IDTs are configured to excite shear acoustic waves in the respective diaphragms of the piezoelectric layer in response to respective radio frequency signals applied to each IDT of the plurality of IDTs.
4. The filter device according to claim 1 , wherein the one or more cavities are in the substrate and are respective cavities for each of the plurality of resonators.
5. The filter device according to claim 1 , wherein the at least one second dielectric layer is thicker than the at least one first dielectric layer for each of the plurality of shunt or series resonators.
6. The filter device according to claim 1 , wherein the substrate comprises a base and an intermediate dielectric layer and the one or more cavities extend in the intermediate dielectric layer.
7. The filter device according to claim 1 , wherein the first surface of the piezoelectric layer is attached to the substrate such that the conductor pattern faces the one or more cavities.
8. The filter device according to claim 1 , wherein the at least one first dielectric layer is planarized over the interleaved fingers of the plurality of IDTs and the first surface of the piezoelectric layer.
9. The filter device according to claim 1 , wherein the thickness of the at least one second dielectric layer of at least one shunt resonator of the plurality of shunt resonators is approximately ten times the thickness of the at least one second dielectric layer of at least one series resonator of the plurality of series resonators.
10. The filter device according to claim 1 , wherein the at least one second dielectric layer is uniform with opposing surfaces that are parallel to the second surface of the piezoelectric layer.
11. The filter device according to claim 10 , wherein the at least one second dielectric layer is uniform with opposing surfaces that are parallel in that the opposing surfaces generally extend parallel to each other.
12. The filter device according to claim 1 , wherein the first dielectric layer of at least one resonator of the plurality of resonators is conformally disposed over the interleaved fingers of the at least one resonator.
13. The filter device according to claim 1 , wherein, when a voltage is applied to the plurality of IDTs, an electric field is excited that is lateral within the piezoelectric layer introducing shear deformation of a bulk acoustic wave, and wherein the bulk acoustic wave propagates orthogonal to a direction of the electric field.
14. A bulk acoustic resonator filter comprising:
a series laterally-excited bulk acoustic resonator comprising:
a substrate having a base and an intermediate layer;
a piezoelectric layer attached to the intermediate layer, and a portion of the piezoelectric layer disposed over a cavity of the series laterally-excited bulk acoustic resonator;
an interdigital transducer (IDT) comprising interleaved fingers disposed on the piezoelectric layer;
a first dielectric layer on a first surface of the piezoelectric layer between the interleaved fingers; and
a second dielectric layer on a second surface of the piezoelectric layer that is opposite the first surface,
wherein a thickness of the second dielectric layer is greater than a thickness of the first dielectric layer;
a shunt laterally-excited bulk acoustic resonator comprising:
a substrate having a base and an intermediate layer;
a piezoelectric layer attached to the intermediate layer, and a portion of the piezoelectric layer disposed over a cavity of the shunt laterally-excited bulk acoustic resonator;
an IDT comprising interleaved fingers disposed on the piezoelectric layer;
a first dielectric layer on a first surface of the piezoelectric layer between the interleaved fingers; and
a second dielectric layer on a second surface of the piezoelectric layer that is opposite the first surface,
wherein a thickness of the second dielectric layer is greater than a thickness of the first dielectric layer,
wherein the second dielectric layer of the shunt laterally-excited bulk acoustic resonator has a greater thickness than a thickness of the second dielectric layer of the series laterally-excited bulk acoustic resonator,
wherein the second dielectric layer of the series laterally-excited bulk acoustic resonator is uniform, and
wherein the second dielectric layer of the shunt laterally-excited bulk acoustic resonator is uniform.
15. The bulk acoustic resonator filter according to claim 14 , wherein, for the series and shunt laterally-excited bulk acoustic resonators, respective IDTs are disposed on the respective piezoelectric layers, such that the respective IDTs faces the respective cavity.
16. The bulk acoustic resonator filter according to claim 14 , wherein the first dielectric layer is planarized over the interleaved fingers of the IDT and the piezoelectric layer of each of the series and shunt laterally-excited bulk acoustic resonators.
17. The bulk acoustic resonator filter according to claim 14 , wherein the thickness of the second dielectric layer of the shunt laterally-excited bulk acoustic resonator has a resonance frequency with an anti-resonance that is approximately at a same frequency as a resonance frequency of the series laterally-excited bulk acoustic resonator.
18. The bulk acoustic resonator filter according to claim 14 , wherein the bulk acoustic resonator filter comprises a ladder filter circuit, wherein the series laterally-excited bulk acoustic resonator is one of a plurality of series laterally-excited bulk acoustic resonators, the shunt laterally-excited bulk acoustic resonator is one of a plurality of shunt laterally-excited bulk acoustic resonators, and wherein the second dielectric layer of any of the shunt laterally-excited bulk acoustic resonators is thicker than any of the first dielectric layers of any of the series laterally-excited bulk acoustic resonators.
19. The bulk acoustic resonator filter according to claim 14 , wherein, when a voltage is applied to the IDTs of each of the series and shunt laterally-excited bulk acoustic resonators, an electric field is excited that is lateral within the respective piezoelectric layer introducing lateral deformation of a bulk acoustic wave, and wherein the bulk acoustic wave propagates orthogonal to a direction of the electric field.
20. The bulk acoustic resonator filter according to claim 14 , wherein the first dielectric layer of at least one of series laterally-excited bulk acoustic resonators and the shunt laterally-excited bulk acoustic resonators is conformally disposed over the interleaved fingers.