Reactive sputter deposition of dielectric films
Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.
1 . A system, comprising:
a chamber;
a sputtering gas inlet configured to provide a sputtering gas into the chamber;
a cathode ring configured to ionize the sputtering gas;
a reservoir configured to have a reactive gas mixed with a water vapor;
an inlet disposed at a center of the cathode ring and connected to the reservoir,
wherein the inlet is configured to provide a mixture of the reactive gas and the water vapor to the chamber, and
wherein a formation of a coating is based on the reactive gas, the water vapor, and ionization of the sputtering gas; and
a substrate holder configured to:
hold a plurality of substrates; and
rotate about an axis within the chamber for simultaneous deposition of the coating onto the plurality of substrates.
2 . The system of claim 1 , wherein the substrate holder is disposed within the chamber.
3 . The system of claim 1 , wherein the inlet is disposed in a bottom wall of the chamber.
4 . The system of claim 1 , wherein the coating comprises silicon dioxide film.
5 . The system of claim 1 , wherein the sputtering gas inlet is configured to provide the sputtering gas to a pre-defined pressure within the chamber.
6 . The system of claim 1 , wherein the sputtering gas inlet is disposed in a bottom wall of the chamber.
7 . The system of claim 1 , wherein the sputtering gas is argon.
8 . The system of claim 1 , further comprising:
a vacuum pump configured to pump air out of the chamber.
9 . The system of claim 1 , wherein the reactive gas is oxygen that reacts with silicon atoms adhered to the plurality of substrates in a manner that forms the coating.
10 . The system of claim 1 , further comprising:
a water vapor source including a water vaporizer.
11 . The system of claim 1 , further comprising:
another inlet configured to provide the mixture of the reactive gas and the water vapor to the chamber.
12 . The system of claim 11 , further comprising:
another cathode ring, wherein the other inlet is disposed at a center of the other cathode ring.
13 . A system, comprising:
a chamber;
a sputtering gas inlet configured to provide a sputtering gas into the chamber;
a cathode ring configured to ionize the sputtering gas;
a reservoir configured to have a reactive gas mixed with a water vapor;
an inlet disposed at a center of the cathode ring and connected to the reservoir,
wherein the inlet is configured to provide a mixture of the reactive gas and the water vapor to the chamber, and
wherein a formation of a coating is based on the reactive gas, the water vapor, and ionization of the sputtering gas; and
a substrate holder configured to hold a plurality of substrates to be coated with the coating.
14 . The system of claim 13 , wherein the inlet is disposed in a bottom wall of the chamber.
15 . The system of claim 13 , wherein the coating comprises silicon dioxide film.
16 . The system of claim 13 , wherein the sputtering gas includes argon and another inert gas.
17 . The system of claim 16 , wherein the other inert gas comprises one of neon, krypton, or xenon.
18 . The system of claim 13 , further comprising:
a loading dock containing one or more other substrates for loading into the chamber.
19 . A system, comprising:
a chamber configured to:
receive a sputtering gas; and
receive a mixture of a reactive gas and a water vapor;
a cathode ring;
a reservoir configured to have the reactive gas mixed with the water vapor;
an inlet disposed at a center of the cathode ring and connected to the reservoir,
wherein the inlet is configured to provide the mixture of the reactive gas and the water vapor to the chamber; and
a substrate holder disposed within the chamber and configured to:
hold a plurality of substrates to be coated with a coating formed based on the reactive gas, the water vapor, and ionization of the sputtering gas.
20 . The system of claim 19 , further comprising:
an anode configured to provide the mixture of the reactive gas and the water vapor to the chamber.