Granted Patent B2

US 12,677,618 · App. 18/174,208 · Granted Jul 7, 2026

Inventors: Moe Narita (Shizuoka, JP); Nobuaki Sugimura (Shizuoka, JP)

Assignee: FUJIFILM Corporation

H10P50/667

Abstract

Claims (45)

1 . A composition comprising:

at least one oxohalogen acid compound selected from the group consisting of hypochlorous acid, chlorous acid, chloric acid, bromic acid, and salts thereof;

a compound represented by Formula (1), and

a chloride ion,

wherein a content of the compound represented by Formula (1) is 1.0% to 25.0% by mass with respect to a total mass of the composition, and

a mass ratio of the content of the compound represented by Formula (1) to the content of the chloride ion is 10 or more and 100 or less,

in Formula (1), R 1 to R 4 each independently represents an alkyl group which may have a substituent, R 1 to R 4 do not represent the same group all together, X n- represents an n-valent anion, and n represents an integer of 1 to 3, and the total number of carbon atoms in R 1 to R 4 is 4 to 15.

2 . The composition according to claim 1 ,

wherein a content of the chloride ion is 0.001% to 1.00% by mass with respect to the total mass of the composition.

3 . The composition according to claim 1 ,

wherein the number of carbon atoms in the alkyl group is 1 to 10.

4 . The composition according to claim 1 ,

wherein n in Formula (1) is 1.

5 . The composition according to claim 1 ,

wherein X n- in Formula (1) is a hydroxide ion, a chloride ion, a fluoride ion, or a bromide ion.

6 . The composition according to claim 1 ,

wherein a content of the oxohalogen acid compound is 0.05% to 28.0% by mass with respect to the total mass of the composition.

7 . The composition according to claim 1 ,

wherein a pH of the composition is 4.0 to 14.0.

8 . The composition according to claim 1 ,

wherein a pH of the composition is 7.0 to 12.0.

9 . The composition according to claim 1 ,

wherein the composition is used for removing a ruthenium-containing substance on a substrate.

10 . A composition comprising:

at least one oxohalogen acid compound selected from the group consisting of hypochlorous acid, chlorous acid, chloric acid, bromic acid, and salts thereof;

a compound represented by Formula (1), and

a chloride ion,

wherein a content of the compound represented by Formula (1) is 1.0% to 25.0% by mass with respect to a total mass of the composition, and

a mass ratio of the content of the compound represented by Formula (1) to the content of the chloride ion is 10 or more and 100 or less,

in Formula (1), R 1 to R 4 each independently represents an alkyl group which may have a substituent, R 1 to R 4 do not represent the same group all together, X n- represents an n-valent anion, and n represents an integer of 1 to 3,

where R 1 to R 4 each represents an alkyl group selected from the group consisting of an alkyl group having one carbon atom which may have a substituent and an alkyl group having two carbon atoms which may have a substituent,

at least one of R 1 , R 2 , R 3 , or R 4 is an alkyl group having one carbon atom which may have a substituent, and

at least one of R 1 , R 2 , R 3 , or R 4 is an alkyl group having two carbon atoms which may have a substituent.

11 . A composition comprising:

at least one oxohalogen acid compound selected from the group consisting of hypochlorous acid, chlorous acid, chloric acid, bromic acid, and salts thereof;

a compound represented by Formula (1), and

a chloride ion,

wherein a content of the compound represented by Formula (1) is 1.0% to 25.0% by mass with respect to a total mass of the composition, and

a mass ratio of the content of the compound represented by Formula (1) to the content of the chloride ion is 10 or more and 100 or less,

in Formula (1), R 1 to R 4 each independently represents an alkyl group which may have a substituent, R 1 to R 4 do not represent the same group all together, X n- represents an n-valent anion, and n represents an integer of 1 to 3,

wherein the compound represented by Formula (1) includes at least one compound selected from the group consisting of an ethyltrimethylammonium salt, a diethyldimethylammonium salt, a methyltriethylammonium salt, a trimethyl(hydroxyethyl) ammonium salt, a dimethylbis(2-hydroxyethyl) ammonium salt, a methyltris(2-hydroxyethyl) ammonium salt, a methyltributylammonium salt, a dimethyldipropylammonium salt, a benzyltrimethylammonium salt, a benzyltriethylammonium salt, and a triethyl(hydroxyethyl) ammonium salt.

12 . A method for treating a substrate, comprising:

a step A of removing a ruthenium-containing substance on a substrate by using the composition according to claim 1 .

13 . The method for treating a substrate according to claim 12 ,

wherein the step A is a step A1 of performing a recess etching treatment on a wiring line which is disposed on a substrate and consists of a ruthenium-containing substance by using the composition, a step A2 of removing a film at an outer edge portion of a substrate, on which a film consisting of a ruthenium-containing substance is disposed, by using the composition, a step A3 of removing a metal-containing substance attached to a back surface of a substrate, on which a film consisting of a ruthenium-containing substance is disposed, by using the composition, a step A4 of removing a ruthenium-containing substance on a substrate, which has undergone dry etching, by using the composition, or a step A5 of removing a ruthenium-containing substance on a substrate, which has undergone a chemical mechanical polishing treatment, by using the composition.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (19)