SiC substrate and SiC ingot
In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm −1 or less.
1. A SiC substrate, wherein, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm −1 or less.
2. The SiC substrate according to claim 1 ,
wherein a plurality of second measurement points separated from each of the plurality of first measurement points by 10 mm in a [1-100] direction or [−1100] direction are further provided, and
wherein, between any two adjacent measurement points among the plurality of first measurement points and the plurality of second measurement points, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm −1 or less.
3. The SiC substrate according to claim 1 , wherein, between any two measurement points separated from each other by 10 mm, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm −1 or less.
4. The SiC substrate according to claim 1 , wherein a diameter of the SiC substrate is 149 mm or more.
5. The SiC substrate according to claim 1 , wherein a diameter of the SiC substrate is 199 mm or more.
6. The SiC substrate according to claim 1 , wherein a maximum absorption coefficient of the SiC substrate for light having a wavelength of 1064 nm is 3.00 cm −1 or less.
7. The SiC substrate according to claim 1 , wherein a maximum absorption coefficient of the SiC substrate for light having a wavelength of 1064 nm is 2.75 cm −1 or less.
8. The SiC substrate according to claim 1 , wherein the substrate includes a portion other than a high nitrogen concentration region called a facet.
9. The SiC substrate according to claim 8 , wherein a dopant intentionally added for determining a conductivity type is nitrogen.
10. A SiC ingot, wherein, when cutting out a SiC substrate therefrom and evaluating a cut surface thereof, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm −1 or less.
11. The SiC ingot according to claim 10 , wherein the ingot includes a portion other than a high nitrogen concentration region called a facet.
12. The SiC ingot according to claim 10 , wherein a dopant intentionally added for determining a conductivity type is nitrogen.