Electronic device
A device includes a first layer, having a copper track located therein. The first layer is covered with a second layer including a cavity. The cavity exposes at least a portion of the track. The portion is covered with a third layer of titanium nitride doped with silicon.
1 . A device, comprising:
a first layer;
a plurality of copper tracks located in the first layer;
a second layer covering the first layer and including a plurality of cavities each exposing at least a portion of a respective track; and
a third layer of titanium nitride doped with silicon lining sidewalls of each cavity, on a top surface of the second layer between the cavities, and covering the exposed portion of each track, silicon concentration in the third layer being in a range from 10% to 20%.
2 . The device of claim 1 , comprising a fourth layer of dielectric material on the third layer in the cavities and over the top surface of the second layer between the cavities.
3 . The device of claim 2 , comprising a fifth layer of conductive material on the third layer in the cavities and over the top surface of the second layer between the cavities.
4 . The device of claim 3 , comprising a sixth layer of dielectric material on the fifth layer.
5 . The device of claim 4 , comprising a first conductive via extending through the sixth layer and contacting the fifth layer of conductive material.
6 . The device of claim 5 , comprising:
a conductive structure in the first layer electrically connected to the tracks; and
a second conductive via extending through the sixth layer and the second layer and contacting the conductive structure.
7 . A device, comprising:
a first layer of insulating material having a plurality of copper tracks located therein;
a second layer of insulating material on the first layer;
a third layer of insulating material on the second layer;
a plurality of cavities extending into a surface of the third layer and through the third layer and the second layer, each the plurality of cavities exposing a respective copper track; and
a fourth layer of titanium nitride doped with silicon in each of the plurality of cavities and contacting a respective copper track, portions of the surface of the third layer between the plurality of cavities being exposed by the fourth layer in each of the plurality of cavities;
a fifth layer of insulating material on the fourth layer, in the plurality of cavities, cavity, and on the surface of the third layer;
a sixth layer of conductive material on the fifth layer, in the plurality of cavities, cavity, and on the surface of the third layer; and
a seventh layer of insulating material on the sixth layer, in the plurality of cavities, cavity, and on the surface of the third layer.
8 . The device of claim 7 , wherein silicon concentration in the titanium nitride is lower than 20%.
9 . The device of claim 7 , wherein the fourth layer covers lateral walls of each of the plurality of cavities.
10 . The device of claim 7 , wherein the fourth, fifth, and sixth layers form a capacitor.
11 . The device of claim 10 , wherein the fifth layer is on the third layer and on lateral walls and bottoms of each of the plurality of cavities.
12 . A device, comprising:
a first insulating layer;
a plurality of conductive tracks in the first insulating layer, the plurality of conductive tracks including copper;
a second insulating layer on the first insulating layer;
a third insulating layer on the second insulating layer;
a plurality of cavities in the second insulating layer and the third insulating layer, each of the plurality of cavities exposing a respective conductive track;
a plurality of first electrodes of a capacitor in the plurality of cavities, respectively, the plurality of first electrodes including silicon-doped titanium nitride, each of the plurality of first electrodes in contact with a respective conductive track, the plurality of first electrodes exposing top surfaces of the third insulating layer between the plurality of cavities;
an insulator of the capacitor on the plurality of first electrodes, in the plurality of cavities, and on the top surfaces of the third insulating layer between the plurality of cavities; and
a second electrode of the capacitor on the insulator, in the plurality of cavities, and on the top surfaces of the third insulating layer between the plurality of cavities; and
a fourth insulating layer on the second electrode, in the plurality of cavities, and on the top surfaces of the third insulating layer between the plurality of cavities.
13 . The device of claim 12 , wherein silicon concentration of silicon-doped titanium nitride in the plurality of first electrodes is lower than 20%.
14 . The device of claim 12 , wherein the plurality of first electrodes are on sidewalls of the plurality of cavities.
15 . The device of claim 14 , wherein the insulator and the second electrode are on the sidewalls of the plurality of cavities.
16 . The device of claim 12 , wherein
the plurality of cavities including a first group of cavities and a second group of cavities that are spaced from each other by portions of the second and third insulating layers,
the device includes an opening extending through the fourth insulating layer, the second electrode of the capacitor, and the insulator of the capacitor, and
the opening is positioned between the first group of cavities and the second group of cavities and exposes the third insulating layer.