Fan out structure for light-emitting diode (LED) device and lighting system
Systems are described. A system includes a silicon backplane having a top surface, a bottom surface, and side surfaces and a substrate surrounding the side surfaces of the silicon backplane. The substrate has a top surface, a bottom surface and side surfaces. At least one bond pad is provided on the bottom surface of the substrate. A metal layer is provided on the bottom surface of the substrate and the bottom surface of the silicon backplane and has a first portion electrically and thermally coupled to the bottom surface of the silicon backplane in a central region and second portions that extend between a perimeter region of the silicon backplane and the at least one bond pad. An array of metal connectors is provided on the top surface of the silicon backplane.
1. A lighting device, comprising:
a silicon backplane having a top surface, a bottom surface and side surfaces;
an array of metal connectors on the top surface of the silicon backplane;
an LED array on the array of metal connectors on the top surface of the silicon backplane with a spacing between adjacent LEDs in the LED array being less than 20 μm;
a substrate surrounding the side surfaces of the silicon backplane, the substrate having a top surface, a bottom surface and side surfaces; and
at least one first bond pad on the top surface of the substrate, the at least one first bond pad being electrically coupled to the array of metal connectors on the top surface of the silicon backplane.
2. The lighting device of claim 1 , further comprising at least one second bond pad on the bottom surface of the substrate, the at least one second bond pad electrically coupled to the at least one first bond pad.
3. The lighting device of claim 1 , further comprising at least one metal layer on the top surface of the silicon backplane and the top surface of the substrate electrically coupling the at least one first bond pad to the array of metal connectors on the top surface of the silicon backplane, the at least one metal layer comprising the at least one bond pad.
4. The lighting device of claim 3 , further comprising redistribution layers on the top surface of the silicon backplane and the top surface of the substrate, the redistribution layers comprising the at least one metal layer.
5. The lighting device of claim 2 , further comprising at least one metal layer on the bottom surface of the silicon backplane.
6. The lighting device of claim 2 , further comprising at least one metal layer on the bottom surface of the substrate, wherein the at least one metal layer comprises the at least one second bond pad.
7. The lighting device of claim 6 , further comprising at least one via formed through the substrate, the via electrically coupling the at least one first bond pad to the at least one second bond pad.
8. The lighting device of claim 6 , further comprising redistribution layers on the bottom surface of the silicon backplane and the bottom surface of the substrate, wherein the redistribution layers comprise the at least one metal layer.
9. A vehicle headlamp system comprising:
a controller;
a light emitting diode (LED) driver; and
an active headlamp, communicatively coupled to the controller and electrically coupled to the LED driver, the active headlamp comprising a light device that comprises:
a silicon backplane having a top surface, a bottom surface and side surfaces;
an array of metal connectors on the top surface of the silicon backplane;
a substrate surrounding the side surfaces of the silicon backplane, the substrate having a top surface, a bottom surface and side surfaces, and
at least one first bond pad on the top surface of the substrate, the at least one first bond pad being electrically coupled to the array of metal connectors on the top surface of the silicon backplane.
10. The system of claim 9 , further comprising at least one metal layer on the bottom surface of the silicon backplane and on the bottom surface of the substrate.
11. The system of claim 10 , further comprising a circuit board, the circuit board comprising at least one second bond pad, the at least one metal layer on the bottom surface of the silicon backplane being thermally coupled to the circuit board, and the at least one metal layer on the bottom surface of the substrate being electrically coupled to the at least one second bond pad on the circuit board.
12. The system of claim 10 , further comprising redistribution layers on the bottom surface of the silicon backplane and the bottom surface of the substrate, wherein the redistribution layers comprise the at least one metal layer.
13. The system of claim 9 , further comprising at least one metal layer on the top surface of the silicon backplane and the top surface of the substrate electrically coupling the at least one first bond pad to the array of metal connectors on the top surface of the silicon backplane, the at least one metal layer comprising the at least one bond pad.
14. The lighting device of claim 13 , further comprising redistribution layers on the top surface of the silicon backplane and the top surface of the substrate, the redistribution layers comprising the at least one metal layer.
15. The lighting device of claim 9 , further comprising an LED array on the array of metal connectors on the top surface of the silicon backplane with a spacing between adjacent LEDs in the LED array being less than 20 μm.
16. A method of manufacturing a lighting device, the method comprising:
molding a silicon backplane such that a molding material surrounds side surfaces of the silicon backplane to form a structure comprising a substrate with an embedded silicon backplane, the structure having a top surface, a bottom surface adjacent, and side surfaces;
forming first bond pads on the top surface of the substrate;
electrically coupling the bonds pads on the top surface of the substrate to the silicon backplane;
forming an array of copper pillar bumps on the top surface of the silicon backplane;
aligning an LED array with the array of metal connectors on the top surface of the silicon backplane, with a spacing between adjacent LEDs in the LED array being less than 20 μm; and
applying heat to reflow the copper pillar bumps.
17. The method of claim 16 , wherein the electrically coupling the bond pads on the top surface of the substrate to the silicon backplane comprises forming redistribution layers comprising at least one metal layer on the top surface of the silicon backplane and the top surface of the substrate.
18. The method of claim 16 , further comprising forming a metal layer on the bottom surface of the silicon backplane and the bottom surface of the substrate.
19. The method of claim 18 , further comprising:
forming at least one via through the molding material;
providing a metal material in the at least one via such that the at least one via is electrically coupled to both the first bond pads on the top surface of the substrate and the metal layer on the bottom surface of the substrate.