High frequency switch and semiconductor device
View Patent ↗According to an embodiment, an SPnT-type high frequency switch includes a plurality of first MOS transistors, second MOS transistors, and a capacitor. The plurality of first MOS transistors are connected in series between one of a plurality of RF terminals and an RF common terminal. The second MOS transistors have ends each connected to adjacent first MOS transistors among the first MOS transistors. The capacitor is connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors.
1. A high frequency switch of a single pole n throw (SPnT) type having n (n is an integer greater than or equal to 2) RF terminals and one RF common terminal, the high frequency switch comprising:
m (m is an integer greater than or equal to 2) first MOS transistors connected in series between one of the n RF terminals and the RF common terminal;
(m−1) second MOS transistors having ends each connected to adjacent first MOS transistors among the m first MOS transistors; and
a capacitor connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors.
2. The high frequency switch according to claim 1 , further comprising:
a third MOS transistor having one end connected to the one of the RF terminals; and
a termination resistor provided between another end of the third MOS transistor and ground.
3. The high frequency switch according to claim 1 , wherein
in a case where m is greater than or equal to 3, another end of a second MOS transistor other than the second MOS transistor to which the capacitor is connected, among the second MOS transistors, is connected to ground.
4. The high frequency switch according to claim 1 , wherein
a capacitance of the capacitor is set in such a manner that a signal transmitted between the one of the RF terminals and the RF common terminal flows through the capacitor side rather than the RF common terminal side on a basis of a frequency of the signal.
5. The high frequency switch according to claim 4 , wherein
the capacitance of the capacitor is set in such a manner that a resonance frequency with inductance of wire bonding connected to a transmission path to the ground is equal to the frequency.
6. A semiconductor device comprising:
a high frequency switch circuit of a single-pole-n-throw (SPnT) type having n (n is an integer greater than or equal to 2) RF terminals and one RF common terminal; and
a controller,
the high frequency switch circuit including:
m (m is an integer greater than or equal to 2) first MOS transistors connected in series between one of the n RF terminals and the RF common terminal;
(m−1) second MOS transistors having ends each connected to adjacent first MOS transistors among the m first MOS transistors; and
a capacitor connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors, and
the controller being configured to output a control signal to the m first MOS transistors and the (m−1) second MOS transistors to perform switching so that an on or off state of the m first MOS transistors and an on or off state of the (m−1) second MOS transistors are different from each other.
7. The semiconductor device according to claim 6 , wherein
the high frequency switch circuit further includes a third MOS transistor having one end connected to the one of the RF terminals and a termination resistor provided between another end of the third MOS transistor and ground, and
the controller is configured to output a control signal to the third MOS transistor to perform switching so that an on or off state of the third MOS transistor becomes a same as the on or off state of the (m−1) second MOS transistors.
8. The semiconductor device according to claim 6 , wherein
in a case where m is greater than or equal to 3, another end of a second MOS transistor other than the second MOS transistor to which the capacitor is connected, among the (m−1) second MOS transistors, is connected to ground.
9. The semiconductor device according to claim 6 , wherein
a capacitance of the capacitor is set in such a manner that a signal transmitted between the one of the RF terminals and the RF common terminal flows through the capacitor side rather than the RF common terminal side on a basis of a frequency of the signal.
10. The semiconductor device according to claim 9 , wherein
the capacitance of the capacitor is set in such a manner that a resonance frequency with inductance of wire bonding connected to a transmission path to the ground is equal to the frequency.