Transistor device having a source region segments and body region segments

1. An apparatus, comprising:

a first trench disposed in a semiconductor region and including a gate electrode;

a second trench disposed in the semiconductor region;

a mesa region disposed between the first trench and the second trench, the mesa region having a length aligned along a longitudinal axis orthogonal to a vertical axis aligned along a height of the mesa region;

a source region segment of a first conductivity type disposed in a first side of the mesa region, the source region segment being included in a plurality of source region segments, the plurality of source region segments being aligned along the longitudinal axis; and

a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region, the body region segment being included in a plurality of body region segments, the plurality of body region segments being aligned along the longitudinal axis and connected to a continuous channel region disposed below the plurality of source region segments,

the source region segment having a portion disposed above the body region segment.

2. The apparatus of claim 1 , wherein the source region segment is a first source region segment of the plurality of source region segments, the body region segment is a first body region segment of the plurality of body region segments,

the apparatus further comprising:

a second source region segment disposed on the second side of the mesa region; and

a second body region segment disposed on the first side of the mesa region,

the second source region segment having a portion disposed above the second source region segment.

3. The apparatus of claim 2 , further comprising:

a third source region segment extending to a top of the mesa region and across a width of the mesa region.

4. The apparatus of claim 2 , further comprising:

a third body region segment extending to a top of the mesa region and across a width of the mesa region, the third body region segment being aligned along the longitudinal axis at a location from the first source region segment.

5. The apparatus of claim 1 , wherein the source region segment is a first source region segment of the plurality of source region segments,

the apparatus further comprising:

a second source region segment extending to a top of the mesa region.

6. The apparatus of claim 5 , further comprising:

a third source region segment extending to a top of the mesa region and across a width of the mesa region.

7. The apparatus of claim 5 , wherein the body region segment is a first body region segment of the plurality of body region segments,

the apparatus further comprising:

a second body region segment extending to a top of the mesa region and across a width of the mesa region, the second body region segment being aligned along the longitudinal axis at a location separate from the first source region segment.

8. The apparatus of claim 1 , wherein the source region segment is a first source region segment of the plurality of source region segments,

the apparatus further comprising:

a second source region segment extending to a top of the mesa region and across a width of the mesa region.

9. The apparatus of claim 1 , wherein each source region segment of the plurality of source region segments is separated from another of the plurality of source region segments by a body region segment from the plurality of body region segments.

10. The apparatus of claim 1 , wherein each body region segment of the plurality of body region segments is connected to a channel region disposed between the first trench and the second trench.

11. The apparatus of claim 1 , wherein the plurality of source region segments are a first plurality of source region segments,

the apparatus further comprising:

a second plurality of source region segments disposed on the second side of the mesa region.

12. The apparatus of claim 1 , wherein the plurality of body region segments are a first plurality of body region segments, the plurality of source region segments are a first plurality of source region segments,

the apparatus further comprising:

a second plurality of body region segments disposed on the second side of the mesa region.

13. The apparatus of claim 1 , wherein the plurality of body region segments are a first plurality of body region segments, the plurality of source region segments are a first plurality of source region segments,

the apparatus further comprising:

a second plurality of body region segments disposed on the second side of the mesa region, the second plurality of body region segments alternating with a second plurality of source region segments along the second side of the mesa region.

14. The apparatus of claim 1 , wherein the source region segment is a first source region segment of the plurality of source region segments, the body region segment is a first body region segment of the plurality of body region segments,

the apparatus further comprising:

a second source region segment disposed on the second side of the mesa region and extending to a top of the mesa region; and

a second body region segment disposed on the first side of the mesa region and extending to the top of the mesa region.

15. The apparatus of claim 14 , further comprising:

a third source region segment extending to a top of the mesa region and across a width of the mesa region.

16. The apparatus of claim 14 , further comprising:

a third body region segment extending to a top of the mesa region and across a width of the mesa region, the third body region segment being aligned along the longitudinal axis at a location from the first source region segment.

17. An apparatus, comprising:

a first trench disposed in a semiconductor region and including a gate electrode;

a second trench disposed in the semiconductor region;

a mesa region disposed between the first trench and the second trench, the mesa region having a length aligned along a longitudinal axis orthogonal to a vertical axis aligned along a height of the mesa region;

a source region segment of a first conductivity type disposed in a first side of the mesa region, the source region segment being included in a plurality of source region segments, the plurality of source region segments being aligned along the longitudinal axis; and

a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region, the body region segment being included in a plurality of body region segments, the plurality of body region segments being aligned along the longitudinal axis, the source region segment having a portion disposed above the body region segment and having an L-shaped profile.

18. The apparatus of claim 17 , further comprising a channel region disposed below the plurality of body region segments.

19. An apparatus, comprising:

a first trench disposed in a semiconductor region and including a gate electrode;

a second trench disposed in the semiconductor region;

a continuous mesa region disposed between the first trench and the second trench, the continuous mesa region having a length aligned along a longitudinal axis orthogonal to a vertical axis aligned along a height of the continuous mesa region;

a source region segment of a first conductivity type disposed in the continuous mesa region and having a portion extending across a width of the continuous mesa region, the source region segment being included in a plurality of source region segments,

a body region segment of a second conductivity type disposed in a side of the continuous mesa region, the body region segment being included in a plurality of body region segments, the plurality of body region segments being aligned along the longitudinal axis.

20. The apparatus of claim 19 , wherein the body region segment extends to a top of the continuous mesa region.

21. The apparatus of claim 19 , wherein the plurality of body region segments are a first plurality of body region segments, the side of the continuous mesa region is a first side of the continuous mesa region, the plurality of source region segments are a first plurality of source region segments,

the apparatus further comprising:

a second plurality of source region segments disposed on a second side of the continuous mesa region opposite the first side of the continuous mesa region, the second plurality of source region segments alternating with a second plurality of body region segments along the second side of the continuous mesa region.

22. An apparatus, comprising:

a first trench disposed in a semiconductor region and including a gate electrode;

a second trench disposed in the semiconductor region;

a mesa region disposed between the first trench and the second trench, the mesa region having a length aligned along a longitudinal axis orthogonal to a vertical axis aligned along a height of the mesa region;

a source region segment of a first conductivity type disposed in a first side of the mesa region, the source region segment being included in a plurality of source region segments;

a first body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region, the first body region segment being included in a plurality of body region segments, the plurality of body region segments being alternately aligned with the plurality of source region segments along the longitudinal axis; and

a second body region segment disposed in the mesa region and having a portion extending across a width of the mesa region.

23. The apparatus of claim 22 , wherein the second body region segment extends to a top of the mesa region.