RRAM with a barrier layer
Various embodiments of the present application are directed towards a resistive random-access memory (RRAM) cell comprising a barrier layer to constrain the movement of metal cations during operation of the RRAM cell. In some embodiments, the RRAM cell further comprises a bottom electrode, a top electrode, a switching layer, and an active metal layer. The switching layer, the barrier layer, and the active metal layer are stacked between the bottom and top electrodes, and the barrier layer is between the switching and active metal layers. The barrier layer is conductive and between has a lattice constant less than that of the active metal layer.
1 . An integrated chip comprising:
a substrate; and
a resistive random-access memory (RRAM) cell overlying the substrate,
wherein the RRAM cell comprises a bottom electrode and a top electrode, and further comprises a switching layer, a barrier layer, and an active metal layer stacked between the bottom electrode and the top electrode,
the active metal layer comprises a first metal element,
the barrier layer comprises a second metal element and nitrogen, and
a concentration of nitrogen in the barrier layer is different at a top of the barrier layer than at a bottom of the barrier layer.
2 . The integrated chip according to claim 1 , wherein the switching layer comprises a conductive filament embedded in dielectric material, wherein the first metal element is a majority element in the active metal layer, and wherein the conductive filament consists essentially of the first metal element.
3 . The integrated chip according to claim 1 , wherein the RRAM cell is configured to form a conductive filament in the switching layer from ions of the first metal element and to source the ions from the active metal layer during formation of the conductive filament.
4 . The integrated chip according to claim 1 , wherein the switching layer is between and directly contacts the bottom electrode and the barrier layer.
5 . The integrated chip according to claim 4 , wherein the active metal layer is between and directly contacts the top electrode and the barrier layer.
6 . The integrated chip according to claim 1 , wherein the barrier layer consists essentially of the second metal element at one of the top and the bottom of the barrier layer, and wherein the barrier layer comprises a metal nitride at another one of the top and the bottom of the barrier layer.
7 . The integrated chip according to claim 1 , wherein the bottom electrode and the top electrode comprise a metal nitride, wherein the active metal layer consists essentially of the first metal element, and wherein the switching layer comprises a dielectric.
8 . The integrated chip according to claim 1 , wherein the barrier layer comprises multiple different layers stacked away from the substrate, and wherein the multiple different layers share the second metal element and have different concentrations of nitrogen.
9 . The integrated chip according to claim 8 , wherein the barrier layer has only two different dielectric layers, which are respectively a metal layer and a metal nitride layer.
10 . The integrated chip according to claim 1 , wherein the barrier layer is on sidewalls of the active metal layer and sidewalls of the switching layer.
11 . An integrated chip comprising:
a bottom electrode;
a dielectric layer overlying the bottom electrode;
a conductive filament in the dielectric layer, wherein the conductive filament extends upward from the bottom electrode;
a barrier layer overlying the dielectric layer;
an active metal layer overlying the barrier layer; and
a top electrode overlying the active metal layer;
wherein the bottom electrode, the top electrode, the dielectric layer, the barrier layer, and the active metal layer define a memory cell, and wherein the conductive filament is spaced from the barrier layer.
12 . The memory cell according to claim 11 , wherein the bottom electrode directly contacts the dielectric layer and comprises a metal nitride.
13 . The memory cell according to claim 11 , wherein the barrier layer has a greater density than the active metal layer and a lattice constant less than a lattice constant of the active metal layer.
14 . The memory cell according to claim 11 , wherein the active metal layer depends on less energy than the bottom electrode to oxidize.
15 . An integrated chip comprising:
a wire; and
a via dielectric layer over the wire;
a bottom electrode overlying the via dielectric layer and extending through the via dielectric layer to the wire;
a switching layer overlying the bottom electrode;
a barrier layer overlying the switching layer;
an active metal layer overlying the barrier layer; and
a top electrode overlying the active metal layer;
wherein the bottom electrode, the top electrode, the switching layer, the barrier layer, and the active metal layer define a memory cell, wherein the switching layer extends from the bottom electrode to the barrier layer, and wherein the bottom electrode is a metal or a metal nitride.
16 . The integrated chip according to claim 15 , wherein the bottom electrode has a T-shaped profile protruding through the via dielectric layer to the wire.
17 . The integrated chip according to claim 15 , wherein the barrier layer overlies a top surface of the via dielectric layer and has an indent overlying the wire, and wherein the indent extends to a location below the top surface of the via dielectric layer.
18 . The integrated chip according to claim 15 , wherein the bottom electrode comprises a conductive body and a conductive liner cupping an underside of the conductive body, and wherein a top surface of the conductive liner is recessed relative to a top surface of the via dielectric layer.
19 . The integrated chip according to claim 15 , further comprising a conductive filament in the switching layer, wherein a width of the conductive filament decreases away from the bottom electrode.
20 . The integrated chip according to claim 15 , wherein the barrier layer is on sidewalls of the active metal layer and sidewalls of the switching layer.