Systems and methods for a top side cooled power semiconductor thermal interface spacer
A power semiconductor package includes: a first power semiconductor; a cold plate including a floor and a first pedestal extending from the floor, wherein the first pedestal is configured to support the first power semiconductor; a thermal interface material configured to transfer heat from the first power semiconductor to the first pedestal of the cold plate; and a spacer including: a first frame configured to receive at least a portion of the first pedestal, and a second frame configured to receive the thermal interface material; wherein the spacer is configured to provide a uniform thickness of the thermal interface material between the first pedestal of the cold plate and the first power semiconductor.
1 . A power semiconductor package comprising:
a first power semiconductor;
a cold plate including a floor and a first pedestal extending from the floor, wherein the first pedestal is configured to support the first power semiconductor;
a thermal interface material configured to transfer heat from the first power semiconductor to the first pedestal of the cold plate; and
a spacer including:
a first frame configured to receive at least a portion of the first pedestal, and
a second frame configured to receive the thermal interface material;
wherein the spacer is configured to provide a uniform thickness of the thermal interface material between the first pedestal of the cold plate and the first power semiconductor.
2 . The power semiconductor package of claim 1 , wherein the second frame includes a sloped surface configured to receive the thermal interface material.
3 . The power semiconductor package of claim 1 , wherein a surface of the second frame configured to contact the first power semiconductor includes one or more of a protrusion or a recess.
4 . The power semiconductor package of claim 1 , wherein the thermal interface material includes one or more of a dispensed gel, a pad, or a thermal material.
5 . The power semiconductor package of claim 1 , wherein the second frame includes a rib that connects a first portion of the second frame to a second portion of the second frame.
6 . The power semiconductor package of claim 5 , wherein the second frame is configured to receive a second power semiconductor, wherein the rib is between the first power semiconductor and the second power semiconductor.
7 . The power semiconductor package of claim 1 , wherein the second frame includes a sloped surface configured to receive the thermal interface material, wherein a surface of the second frame configured to contact the first power semiconductor includes one or more of a protrusion or a recess, and wherein the second frame includes a rib that connects a first portion of the second frame to a second portion of the second frame.
8 . The power semiconductor package of claim 1 , wherein the first frame extends from the first pedestal to cover at least a portion of the floor of the cold plate.
9 . The power semiconductor package of claim 1 , wherein the cold plate further includes a second pedestal extending from the floor, wherein the second pedestal is configured to support a second power semiconductor.
10 . The power semiconductor package of claim 9 , wherein the spacer is configured to cover the first pedestal and the second pedestal.
11 . An inverter comprising the power semiconductor package of claim 1 .
12 . A vehicle comprising the inverter of claim 11 .
13 . A spacer including:
a first frame configured to receive at least a portion of a first pedestal of a cold plate; and
a second frame configured to receive a thermal interface material, wherein the thermal interface material is configured to transfer heat from a first power semiconductor to the first pedestal of the cold plate;
wherein the spacer is configured to control a thickness of the thermal interface material between the first pedestal of the cold plate and the first power semiconductor.
14 . The spacer of claim 13 , wherein the second frame includes a sloped surface.
15 . The spacer of claim 13 , wherein the second frame includes one or more of a protrusion or a recess.
16 . The spacer of claim 13 , wherein the second frame includes a rib that connects a first portion of the second frame to a second portion of the second frame.
17 . The spacer of claim 16 , wherein the second frame is configured to receive the first power semiconductor and a second power semiconductor.
18 . A system comprising:
an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes:
a power semiconductor package including:
a first power semiconductor;
a cold plate including a floor and a first pedestal extending from the floor, wherein the first pedestal is configured to support the first power semiconductor;
a thermal interface material configured to transfer heat from the first power semiconductor to the first pedestal of the cold plate; and
a spacer including:
a first frame configured to receive at least a portion of the first pedestal, and
a second frame configured to receive the thermal interface material;
wherein the spacer is configured to control a thickness of the thermal interface material between the first pedestal of the cold plate and the first power semiconductor.
19 . The system of claim 18 , wherein:
the second frame includes a sloped surface configured to receive the thermal interface material,
a surface of the second frame configured to contact the first power semiconductor includes one or more of a protrusion or a recess, and
the second frame includes a rib that connects a first portion of the second frame to a second portion of the second frame.
20 . The system of claim 18 , further comprising:
the battery configured to supply the DC power to the inverter; and
the motor configured to receive the AC power from the inverter to drive the motor.