Solid-state imaging device, method for driving the same, and electronic device for improved auto-focusing accuracy
The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.
1. A light detecting device, comprising:
a first photoelectric conversion portion disposed above a semiconductor substrate, the first photoelectric conversion portion comprising:
a photoelectric conversion film comprising a first part and a second part;
a first electrode disposed below the first part;
a second electrode disposed below the second part; and
a third electrode disposed above at least one of the first part and the second part;
an on-chip lens disposed above the first photoelectric conversion portion;
a first conductive plug electrically coupled to the first electrode, at least a part of the first conductive plug being disposed in the semiconductor substrate;
a second conductive plug electrically coupled to the second electrode, at least a part of the second conductive plug being disposed in the semiconductor substrate;
a first semiconductor region electrically couped to the first conductive plug and disposed in the semiconductor substrate; and
a second semiconductor region electrically couped to the second conductive plug and disposed in the semiconductor substrate.
2. The light detecting device according to claim 1 , wherein the on-chip lens overlaps the first part and the second part in a plan view.
3. The light detecting device according to claim 1 , further comprising a second photoelectric conversion portion disposed in the semiconductor substrate.
4. The light detecting device according to claim 3 , wherein the on-chip lens overlaps the second photoelectric conversion portion in a plan view.
5. The light detecting device according to claim 3 , wherein at least a part of the second photoelectric conversion portion is disposed between the first conductive plug and the second conductive plug in a cross-sectional view.
6. The light detecting device according to claim 3 , wherein the first photoelectric conversion portion is configured to photoelectrically convert light of a first color and the second photoelectric conversion portion is configured to photoelectrically convert light of a second color which is different from the first color.
7. The light detecting device according to claim 6 , wherein the first color is green and the second color is blue or red.
8. The light detecting device according to claim 1 , wherein a set of phase difference signals is configured to be acquired from the first part and the second part.
9. The light detecting device according to claim 8 , wherein an image signal is configured to be acquired from the first part and the second part.
10. The light detecting device according to claim 1 , wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface, the first surface being disposed between the first photoelectric conversion portion and the second surface, and wherein the first semiconductor region is disposed at the second surface, and wherein the second semiconductor region is disposed at the second surface.
11. The light detecting device according to claim 1 , further comprising a first transistor electrically coupled to the first semiconductor region.
12. The light detecting device according to claim 11 , further comprising a third semiconductor region electrically coupled to the first semiconductor region through the first transistor.
13. The light detecting device according to claim 12 , further comprising a second transistor electrically coupled to the second semiconductor region and the third semiconductor region.
14. The light detecting device according to claim 12 , further comprising a third transistor, a gate of the third transistor is electrically coupled to the third semiconductor region.
15. An electronic device, comprising:
an optical unit that collects light;
a light detecting device that receives light from the optical unit, the light detecting device, comprising:
a first photoelectric conversion portion disposed above a semiconductor substrate, the first photoelectric conversion portion comprising:
a photoelectric conversion film comprising a first part and a second part;
a first electrode disposed below the first part;
a second electrode disposed below the second part; and
a third electrode disposed above at least one of the first part and the second part;
an on-chip lens disposed above the first photoelectric conversion portion;
a first conductive plug electrically coupled to the first electrode, at least a part of the first conductive plug being disposed in the semiconductor substrate;
a second conductive plug electrically coupled to the second electrode, at least a part of the second conductive plug being disposed in the semiconductor substrate;
a first semiconductor region electrically couped to the first conductive plug and disposed in the semiconductor substrate; and
a second semiconductor region electrically couped to the second conductive plug and disposed in the semiconductor substrate; and
a signal processing circuit that processes signals received from the light detecting device.
16. The electronic device according to claim 15 , wherein the on-chip lens overlaps the first part and the second part in a plan view.
17. The electronic device according to claim 15 , further comprising a second photoelectric conversion portion disposed in the semiconductor substrate.
18. The electronic device according to claim 17 , wherein the on-chip lens overlaps the second photoelectric conversion portion in a plan view.
19. The electronic device according to claim 17 , wherein at least a part of the second photoelectric conversion portion is disposed between the first conductive plug and the second conductive plug in a cross-sectional view.
20. The electronic device according to claim 17 , wherein the first photoelectric conversion portion is configured to photoelectrically convert light of a first color and the second photoelectric conversion portion is configured to photoelectrically convert light of a second color which is different from the first color.