Radiation-emitting semiconductor chip
In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.
1. A radiation-emitting semiconductor chip comprising:
a semiconductor body having an active region configured to generate radiation;
a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area;
a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in a plan view of the radiation-emitting semiconductor chip;
a current distribution layer electrically conductively connected to the first contact layer;
a connection layer electrically conductively connected to the first contact layer via the current distribution layer; and
an insulation layer containing a dielectric material,
wherein the insulation layer is arranged in places between the connection layer and the current distribution layer,
wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and
wherein edge regions of the insulation layer comprise more openings than a central region of the insulation layer.
2. The radiation-emitting semiconductor chip according to claim 1 , wherein the insulation layer covers the connection layer up to at least 30% of an area of the connection layer.
3. The radiation-emitting semiconductor chip according to claim 1 , wherein the insulation layer is a filter layer configured to predominantly transmit incident radiation within a first angular range and to predominantly reflect incident radiation within a second angular range.
4. The radiation-emitting semiconductor chip according to claim 3 , wherein the insulation layer consist of a single layer.
5. The radiation-emitting semiconductor chip according to claim 4 , wherein the insulation layer has a refractive index larger than or equal to a refractive index of a medium surrounding the insulation layer.
6. The radiation-emitting semiconductor chip according to claim 3 , wherein the insulation layer is a multi-layer structure.
7. The radiation-emitting semiconductor chip according to claim 1 , wherein the insulation layer adjoins the connection layer and the current distribution layer.
8. The radiation-emitting semiconductor chip according to claim 1 , wherein the connection layer has a thickness less than a thickness of the current distribution layer.
9. The radiation-emitting semiconductor chip according to claim 1 , wherein at least 50% of an entire area of the second contact finger structure overlaps with the first contact finger structure.
10. The radiation-emitting semiconductor chip according to claim 1 , wherein the connection layer and/or the current distribution layer contains a transparent electrically conductive oxide (TCO) material.
11. The radiation-emitting semiconductor chip according to claim 1 , wherein one or more openings are provided at an edge of the radiation-emitting semiconductor chip, and wherein the one or more openings are larger than openings at a center of the radiation-emitting semiconductor chip.
12. The radiation-emitting semiconductor chip according to claim 1 , wherein the openings are filled at least in regions with a material of the current distribution layer.
13. The radiation-emitting semiconductor chip according to claim 1 , wherein a vertical direction extends perpendicular to a main extension plane of the active region, and wherein a plan view is along the vertical direction.
14. The radiation-emitting semiconductor chip according to claim 13 , wherein the first contact finger structure and the second contact finger structure overlap in the vertical direction.
15. A radiation-emitting semiconductor chip comprising:
a semiconductor body having an active region configured to generate radiation;
a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area;
a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip;
a current distribution layer electrically conductively connected to the first contact layer;
a connection layer electrically conductively connected to the first contact layer via the current distribution layer; and
an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer,
wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another,
wherein edge regions of the insulation layer are provided with more openings than a central region of the insulation layer, and
wherein the insulation layer covers at least 90% of an entire base area of the radiation-emitting semiconductor chip.
16. The radiation-emitting semiconductor chip according to claim 15 , wherein the insulation layer is a filter layer configured to predominantly transmit incident radiation within a first angular range and to predominantly reflect incident radiation within a second angular range.
17. The radiation-emitting semiconductor chip according to claim 16 , wherein the insulation layer consist of a single layer.
18. The radiation-emitting semiconductor chip according to claim 17 , wherein the insulation layer has a refractive index larger than or equal to a refractive index of a medium surrounding the insulation layer.
19. The radiation-emitting semiconductor chip according to claim 16 , wherein the insulation layer directly adjoins the connection layer and the current distribution layer.