Light emitting diode with optimised electric injection from a side electrode

1 . A light-emitting diode comprising:

a first electrode;

a first layer of semiconductor doped to a first conductivity type and comprising a first face arranged on the first electrode;

a second layer of semiconductor doped to a second conductivity type, opposite to the first conductivity type;

a region of radiative recombination of electric charge carriers of the first and second conductivity types arranged between, or at an interface of a second face, opposite the first face, of the first layer and a first face of the second layer;

a third layer of semiconductor doped to the second conductivity type;

a fourth layer of semiconductor arranged between a second face, opposite the first face, of the second layer and the third layer; and

a second electrode arranged against at least part of at least one side face of the third layer and against only part of at least one side face of the fourth layer;

wherein the semiconductor of the fourth layer forms, in relation to the semiconductor of the third layer, an energy barrier of at least 100 MeV against a flow of electric charge carriers of the second conductivity type from the second electrode to the second layer.

2 . The light-emitting diode according to claim 1 , wherein:

the semiconductor of the fourth layer is non-doped or is doped to the second conductivity type with a doping level less than that of the semiconductor of the third layer, and/or

the alloy composition of the semiconductor of the fourth layer is different from that of the semiconductor of the third layer.

3 . The light-emitting diode according to claim 1 , wherein the first conductivity type corresponds to p-type and the second conductivity type corresponds to n-type.

4 . The light-emitting diode according to claim 1 , wherein the electrical conductivity of the third layer is greater than that of the second layer.

5 . The light-emitting diode according to claim 1 , wherein the second electrode forms a ring laterally surrounding the third layer over its entire thickness and laterally surrounding only part of the fourth layer, said part of the fourth layer being arranged against the third layer.

6 . The light-emitting diode according to claim 1 , wherein the semiconductors of the first, second, third and fourth layers are III-V semiconductors.

7 . The light-emitting diode according to claim 1 , wherein the region of radiative recombination of electric charge carriers of the first and second conductivity types comprises one or several quantum wells each formed by at least one semiconductor emissive layer arranged between at least two semiconductor barrier layers.

8 . The light-emitting diode according to claim 1 , further comprising:

a non-doped semiconductor layer arranged between the region of radiative recombination of electric charge carriers of the first and second conductivity types and the second layer, and designed to form an electrical dopant diffusion barrier, and/or

a layer for blocking electric charge carriers of the second conductivity type arranged between the region of radiative recombination of electric charge carriers of the first and second conductivity types and the first layer, and comprising a semiconductor doped to the first conductivity type, wherein a gap of the semiconductor of the layer for blocking electric charge carriers is greater than that of the semiconductor of the first layer.

9 . A method for producing a light-emitting diode comprising:

producing a stack of layers on a first substrate including:

a) a first electrode layer arranged on the first substrate;

b) a first layer of semiconductor doped to a first conductivity type and comprising a first face arranged on the first electrode layer;

c) a second layer of semiconductor doped to a second conductivity type, opposite to the first conductivity type;

d) a region of radiative recombination of electric charge carriers of the first and second conductivity types arranged between, or at an interface of a second face, opposite the first face, of the first layer and a first face of the second layer;

e) a third layer of semiconductor doped to the second conductivity type;

f) a fourth layer of semiconductor arranged between a second face, opposite the first face, of the second layer and the third layer;

etching the stack such that remaining portions of the stack form at least one mesa-type structure;

conformal deposition of a dielectric layer, covering at least an upper face and side faces of the mesa-type structure;

anisotropic etching of part of the thickness of the dielectric layer, revealing at least part of at least one side face of the third layer and only part of at least one side face of the fourth layer; and

producing an electrode, named a second electrode, against said at least part of at least one side face of the third layer and against said only part of at least one side face of the fourth layer;

wherein the semiconductor of the fourth layer forms, in relation to the semiconductor of the third layer, an energy barrier of at least 100 MeV against a flow of electric charge carriers of the second conductivity type from the second electrode to the second layer.

10 . The method according to claim 9 , wherein producing the stack of layers comprising the following steps:

epitaxy of the first, second, third and fourth layers and of the region of radiative recombination on a growth substrate, such that the third layer is arranged between the growth substrate and the fourth layer;

deposition of the first electrode layer on the first layer;

securing the first electrode layer to the first substrate which corresponds to a transfer substrate;

removing the third layer from the growth substrate; and

etching and chemical-mechanical polishing of a face of the third layer previously arranged against the growth substrate.