SYSTEM AND METHOD FOR CONTROLLING FILM THICKNESS, AND FILM DEPOSITION SYSTEM AND METHOD USING SAME
Described are various embodiments of a system and method for controlling film thickness, and a film deposition system and method using same. In one such embodiments, a vapour deposition system for spatially controlling a deposited film thickness on a substrate comprises: an emission source; a substrate holder; and a translatable shutter comprising a flux barrier disposed between said emission source and the substrate and operable to translate said flux barrier through a deposition flux according to a designated linear translation profile designated to spatially control the deposited film thickness.
1 . A vapour deposition system for spatially controlling a deposited film thickness on a substrate, the vapour deposition system comprising:
an emission source;
a substrate holder; and
a translatable shutter comprising a flux barrier disposed between said emission source and the substrate and operable to translate said flux barrier through a deposition flux according to a designated linear translation profile designated to spatially control the deposited film thickness.
2 . The vapour deposition system of claim 1 , wherein said substrate holder is configurable to position the substrate at a designated angle relative to a deposition flux axis, and wherein said designated linear translation profile is designated as a function of said designated angle.
3 . The vapour deposition system of claim 1 , wherein said designated linear translation profile comprises a non-uniform velocity profile.
4 . The vapour deposition system of claim 3 , wherein said non-uniform velocity profile corresponds to a spatially defined non-uniformity of deposition on the substrate.
5 . The vapour deposition system of claim 1 , wherein said linear translation profile is applied in accordance with a translation axis that is substantially perpendicular to said deposition flux.
6 . The vapour deposition system of claim 1 , wherein said flux barrier comprises a non-uniform width profile.
7 . The vapour deposition system of claim 6 , wherein said non-uniform width profile corresponds to one or more of a deposition system geometry or a substrate geometry.
8 . The vapour deposition system of claim 1 , wherein said flux barrier comprises a plurality of barrier modules, each of said plurality comprising a respective barrier geometry corresponding to a respective deposition system geometry.
9 . The vapour deposition system of claim 1 , wherein said translatable shutter further comprises an actuator operable to translate said flux barrier according to said designated linear translation profile.
10 . The vapour deposition system of claim 9 , further comprising a digital data storage component having stored thereon said designated linear translation profile, the vapour deposition system further comprising a digital data processor operable to execute translation of said flux barrier via said actuator.
11 . The vapour deposition system of claim 1 , wherein the designated linear translation profile is designated to enhance a uniformity of the deposited film thickness.
12 . The vapour deposition system of claim 11 , wherein said enhanced uniformity comprises a uniformity enhancement relative to a baseline deposition layer uniformity.
13 . The vapour deposition system of claim 1 , wherein said flux barrier comprises a tapered rectangular portion disposed to translate between said emission source and the substrate to block a corresponding subsection of said deposition flux.
14 . The vapour deposition system of claim 13 , wherein said tapered rectangular portion comprises a curved leading edge at least partially defining a tapered width profile of said flux barrier.
15 . The vapour deposition system of claim 14 , wherein said tapered rectangular portion further comprises a curved tailing edge further defining said tapered width profile of said flux barrier to act as an opposed leading edge to operate said flux barrier as a bi-directional shutter.
16 . The vapour deposition system of claim 15 , wherein said leading edge and said tailing edge are defined by respective distinct curvatures.
17 . The vapour deposition system of claim 13 , wherein said rectangular portion is dimensioned and translatable to block an entirety of the substrate from said deposition.
18 . The vapour deposition system of claim 1 , wherein translation of said flux barrier according to said designated linear translation profile is triggered by one of an elapsed initial deposition time or a measured initial deposition accumulation.
19 . A method for spatially controlling a film thickness deposited on a substrate using a vapour deposition system comprising an emission source and a substrate holder, the method comprising:
emitting from the emission source a deposition material; and
translating a flux barrier disposed between the emission source and the substrate through a deposition flux of said deposition material according to a designated linear translation profile designated to spatially control the deposited film thickness.
20 . The method of claim 13 , further comprising angling the substrate at an angle relative to a deposition flux axis, and designating said designated linear translation profile according to said angle.
21 . The method of claim 13 , wherein said translating further comprises translating said flux barrier according to a non-uniform velocity profile.
22 . The method of claim 15 , further comprising calculating said non-uniform velocity profile at least in part based on a spatially dependent rate of deposition on the substrate.
23 . The method of claim 13 , wherein said translating a flux barrier comprises translating said flux barrier in a translation axis direction that is perpendicular to an axis of propagation of said deposition flux.
24 . The method of claim 13 , further comprising:
selecting as said flux barrier, based on one or more of a deposition system geometry or a substrate geometry, a designated barrier from a plurality of respective flux barriers, each of said plurality comprising a respective barrier geometry corresponding to one or more of a designated deposition system geometry or a designated substrate geometry.
25 . The method of claim 13 , wherein said translating comprises actuating via one or more actuators translation of said flux barrier according to said designated linear translation profile.
26 . The method of claim 13 , further comprising selecting as said designated linear translation profile, at least in part based on one or more of a deposition system geometry, a substrate geometry, or a deposition material, a given translation profile from a plurality of designated translation profiles.
27 . The method of claim 13 , wherein the controlling of the film thickness comprises depositing a uniform film thickness on the substrate.