Forming method of resistive random-access memory array
A forming method of a ReRAM array includes steps as follows: Firstly, a first pulse is applied to a first ReRAM unit in the ReRAM array. Afterwards, a second pulse is applied to the first ReRAM unit, wherein the electrical property of the first pulse is opposite to that of the second pulse. Then, a verification pulse is applied to the first ReRAM unit to verify whether the first resistance value of the first ReRAM unit passes a preset threshold. When the first resistance value passes the preset threshold value, a third pulse is applied to the first ReRAM unit, wherein the first pulse and the third pulse have the same electrical property, and the first pulse has a voltage value substantially the same to that of the third pulse.
1. A forming method of a resistive random-access memory (ReRAM) array, comprising:
applying a first pulse to a first ReRAM unit in the ReRAM array;
applying a second pulse to the first ReRAM unit, wherein an electrical property of the first pulse is opposite to that of the second pulse;
applying a verification pulse to the first ReRAM unit to verify whether a first resistance value of the first ReRAM unit passes a preset threshold;
when the first resistance value passes the preset threshold value, a third pulse is applied to the first ReRAM unit, wherein the first pulse and the third pulse have a same electrical property, and the first pulse has a voltage value substantially the same to that of the third pulse;
applying the first pulse to a second ReRAM unit in the ReRAM array, wherein the first ReRAM unit and the second ReRAM unit are electrically connected to each other through a bit line;
applying the second pulse to the second ReRAM unit;
applying the verify pulse to the second ReRAM unit; and
when a second resistance value of the second ReRAM unit passes the preset threshold value, the third pulse is applied to the second ReRAM unit.
2. The forming method according to claim 1 , before applying the first pulse to the second ReRAM unit, further comprising:
applying the first pulse to at least one third ReRAM unit in the ReRAM array, wherein the at least one third ReRAM unit and the first ReRAM unit are electrically connected to each other through a word line;
applying the second pulse to the at least one third ReRAM unit;
applying the verify pulse to the at least one third ReRAM unit; and
when the at least one third resistance value of the at least one third ReRAM unit passes the preset threshold value, the third pulse is applied to the at least one third ReRAM unit.
3. The forming method according to claim 2 , wherein when the first resistance value fails to pass the preset threshold value, further comprises:
applying a fourth pulse to the first ReRAM unit, wherein the fourth pulse and the first pulse have the same electrical property and a same voltage value, and the fourth pulse has a pulse width larger than that of the first pulse;
applying the second pulse to the first ReRAM unit;
applying the verification pulse to the first ReRAM unit to verify whether a fourth resistance value of the first ReRAM unit passes the preset threshold; and
when the fourth resistance value passes the preset threshold value, the third pulse is applied to the first ReRAM unit.
4. The forming method according to claim 2 , wherein:
when the first pulse is applied to the first ReRAM unit, the first pulse is simultaneously applied to the at least one third ReRAM unit;
when the second pulse is applied to the first ReRAM unit, the second pulse is simultaneously applied to the at least one third ReRAM unit; and
when the third pulse is applied to the first ReRAM unit, the third pulse is simultaneously applied to the at least one third ReRAM unit.
5. The forming method according to claim 4 , wherein when one of the first resistance value and the at least one third resistance value fails to pass the preset threshold value:
applying the first pulse to the first ReRAM unit and the at least one third ReRAM unit, simultaneously;
applying the second pulse to the first RRAM cell and the at least one third RRAM cell, simultaneously;
applying the verification pulse to the first ReRAM unit and the at least one third ReRAM unit, respectively; and
when both the first resistance value and the at least one third resistance value pass the preset threshold value, the third pulse is applied simultaneously to the first ReRAM unit and the at least one third ReRAM unit.
6. The forming method according to claim 2 , wherein:
when the first pulse is applied to the first ReRAM unit, the first pulse is simultaneously applied to the second ReRAM unit and the at least one third r ReRAM unit;
when the second pulse is applied to the first ReRAM unit, the second pulse is simultaneously applied to the at least one third ReRAM unit; and
when the third pulse is applied to the first ReRAM unit, the third pulse is simultaneously applied to the at least one third ReRAM unit.
7. The forming method according to claim 6 , wherein when one of the first resistance value and the at least one third resistance value fails to pass the preset threshold value:
applying the first pulse to the first ReRAM unit and the at least one third ReRAM unit, simultaneously;
applying the second pulse to the first ReRAM unit and the at least one third ReRAM unit, simultaneously;
applying the verification pulse to the first ReRAM unit and the at least one third ReRAM unit, respectively;
when both the first resistance value and the third resistance value pass the preset threshold value, the third pulse is applied to the first ReRAM unit and the at least one third ReRAM unit.
8. The forming method according to claim 1 , before applying the first pulse to the first ReRAM unit, further comprising: applying a preparation pulse to the first ReRAM unit, wherein the preparation pulse is substantially the same as the verification pulse.
9. The forming method according to claim 1 , wherein the verification pulse and the first pulse have the same electrical property, and the verification pulse has a voltage value smaller than that of the first pulse.
10. The forming method according to claim 1 , wherein the step of verifying whether the first resistance value passing the preset threshold comprises determining whether the first resistance value is less than 200K ohms, or whether a current passing through the first ReRAM unit is greater than 2uA.