Memory sub-system enclosure
Aspects of the present disclosure are directed to a memory sub-system with isothermal cooling of components. A PCB assembly may be secured between a heat spreader and a heat sink that are thermally coupled. The heat sink radiates heat absorbed from both sides of the PCB assembly. By connecting the heat spreader to the heat sink, heat is more effectively transferred from the side of the PCB assembly not directly connected to the heat sink. The PCB assembly may be secured between a top enclosure and a bottom enclosure. The top enclosure and the bottom enclosure may be thermally coupled using a vapor chamber. The vapor chamber pumps heat from a higher-temperature side of the PCB assembly to a lower-temperature side of the PCB assembly. By using the vapor chamber to thermally couple the top and bottom enclosures, creation of hot spots is avoided.
1. A memory sub-system, comprising:
a printed circuit board (PCB);
a memory component connected to the PCB;
a processing device connected to the PCB and operably coupled to the memory component;
an enclosure comprising a bottom heat spreader and a top portion, the bottom heat spreader allowing distribution of heat among components on a bottom of the PCB; and
a titanium-based vapor chamber configured to transfer heat between the bottom heat spreader and the top portion of the enclosure.
2. The memory sub-system of claim 1 , wherein the enclosure further comprises:
a plurality of fasteners connecting the bottom heat spreader and the top portion, the fasteners configured to conduct heat between the bottom heat spreader and the top portion.
3. The memory sub-system of claim 2 , wherein the bottom heat spreader comprises a feature that creates an interference fit with the top portion once the plurality of fasteners are tightened, the interference fit configured to conduct heat between the bottom heat spreader and the top portion.
4. The memory sub-system of claim 1 , further comprising:
a thermal gap pad in contact with the vapor chamber and the top portion.
5. The memory sub-system of claim 1 , wherein the titanium-based vapor chamber is a U-shaped 0.3 mm thick titanium-based vapor chamber.
6. The memory sub-system of claim 1 , further comprising:
a peripheral component interconnect (PCI) input/output (I/O) bracket.
7. The memory sub-system of claim 1 , wherein the memory sub-system is a solid state drive (SSD).
8. The memory sub-system of claim 1 , wherein the enclosure is configured to transfer heat from the bottom heat spreader to the top portion.
9. The memory sub-system of claim 1 , wherein the top portion comprises a plurality of fins configured to radiate heat into an environment of the memory sub-system.
10. The memory sub-system of claim 1 , wherein the titanium-based vapor chamber has a thermal conductivity greater than 1000 W/mK.
11. A method of manufacturing a memory sub-system comprising:
adding a memory component to a printed circuit board (PCB);
adding a processing device coupled to the memory component to the PCB;
placing a titanium-based vapor chamber configured to transfer heat between a bottom heat spreader a top portion of an enclosure; and
securing the enclosure comprising the bottom heat spreader and the top portion to the PCB, the bottom heat spreader allowing distribution of heat among components on a bottom of the PCB.
12. The method of claim 11 , wherein the enclosure further comprises:
a plurality of fasteners connecting the bottom heat spreader and the top portion, the fasteners configured to conduct heat between the bottom heat spreader and the top portion.
13. The method of claim 12 , wherein the bottom heat spreader comprises a feature that creates an interference fit with the top portion once the plurality of fasteners are tightened, the interference fit configured to conduct heat between the bottom heat spreader and the top portion.
14. The method of claim 11 , further comprising:
placing a thermal gap pad in contact with the vapor chamber and the top portion.
15. The method of claim 11 , wherein the titanium-based vapor chamber is a U-shaped 0.3 mm thick titanium-based vapor chamber.
16. The method of claim 11 , further comprising:
securing a peripheral component interconnect (PCI) input/output (I/O) bracket to the PCB.
17. The method of claim 11 , wherein the memory sub-system is a solid state drive (SSD).
18. The method of claim 11 , wherein the enclosure is configured to transfer heat from the bottom heat spreader to the top portion.
19. The method of claim 11 , wherein the top portion comprises a plurality of fins configured to radiate heat into an environment of the memory sub-system.
20. The method of claim 11 , wherein the titanium-based vapor chamber has a thermal conductivity greater than 1000 W/mK.