Managing error-handling flows in memory devices
Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including detecting a read error with respect to data residing in a first block of the memory device, wherein the first block is associated with a voltage offset bin; determining a most recently performed error-handling operation performed on a second block associated with the voltage offset bin; and performing the error-handling to recover the data.
1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, to perform operations comprising:
detecting a read error with respect to data residing in a first block of the memory device, wherein the first block is assigned to a voltage offset bin which defines a set of threshold voltage offsets to be applied to a base voltage read level during read operations;
determining a most recently performed error-handling operation performed on a second block associated with the voltage offset bin; and
performing the error-handling operation to recover the data.
2. The system of claim 1 , wherein the most recently performed error-handling operation is an error-handling operation that has successfully recovered data associated with a previous read error that occurred to a block associated with the voltage offset bin.
3. The system of claim 1 , wherein the operations further comprise:
maintaining, in a metadata table, a record indicating an error-handling operation that successfully recovered data.
4. The system of claim 1 , wherein the operations further comprise:
adjusting an order of a set of error-handling operations by positioning the most recently performed error-handling operation within a predetermined position in the order of the set of error-handling operations.
5. The system of claim 4 , wherein the operations further comprise:
in response to a current error-handling operation of the set of error-handling operations in the adjusted order recovering data associated with the read error, updating a metadata table by replacing the most recently performed error-handling operation with the current error-handling operation.
6. The system of claim 4 , wherein the predetermined position is set during at least one of programming or calibration of the memory device.
7. The system of claim 4 , wherein the operations further comprise:
performing one or more error-handling operations of the set of error handling operations to recover the data in the adjusted order until data associated to the read error is recovered.
8. A method, comprising:
detecting a read error with respect to data residing in a first block of a memory device, wherein the first block is assigned to with a voltage offset bin which defines a set of threshold voltage offsets to be applied to a base voltage read level during read operations;
determining a most recently performed error-handling operation performed on a second block associated with the voltage offset bin; and
performing the error-handling operation to recover the data.
9. The method of claim 8 , wherein the most recently performed error-handling operation is an error-handling operation that has successfully recovered data associated with a previous read error that occurred to a block associated with the voltage offset bin.
10. The method of claim 8 , further comprising:
maintaining, in a metadata table, a record indicating an error-handling operation that successfully recovered data.
11. The method of claim 8 , further comprising:
adjusting an order of a set of error-handling operations by positioning the most recently performed error-handling operation within a predetermined position in the order of the set of error-handling operations.
12. The method of claim 11 , further comprising:
in response to a current error-handling operation of the set of error-handling operations in the adjusted order recovering data associated with the read error, updating a metadata table by replacing the most recently performed error-handling operation with the current error-handling operation.
13. The method of claim 11 , wherein the predetermined position is set during at least one of programming or calibration of the memory device.
14. The method of claim 11 , further comprising:
performing one or more error-handling operations of the set of error handling operations to recover the data in the adjusted order until data associated to the read error is recovered.
15. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device operatively coupled to a memory, performs operations comprising:
detecting a read error with respect to data residing in a first block of a memory device, wherein the first block is assigned to with a voltage offset bin which defines a set of threshold voltage offsets to be applied to a base voltage read level during read operations;
determining a most recently performed error-handling operation performed on a second block associated with the voltage offset bin; and
performing the error-handling operation to recover the data.
16. The non-transitory computer-readable storage medium of claim 15 , wherein the most recently performed error-handling operation is an error-handling operation that has successfully recovered data associated with a previous read error that occurred to a block associated with the voltage offset bin.
17. The non-transitory computer-readable storage medium of claim 15 , wherein the operations further comprise:
maintaining, in a metadata table, a record indicating an error-handling operation that successfully recovered data.
18. The non-transitory computer-readable storage medium of claim 15 , wherein the operations further comprise:
adjusting an order of a set of error-handling operations by positioning the most recently performed error-handling operation within a predetermined position in the order of the set of error-handling operations.
19. The non-transitory computer-readable storage medium of claim 18 , wherein the operations further comprise:
in response to a current error-handling operation of the set of error-handling operations in the adjusted order recovering data associated with the read error, updating a metadata table by replacing the most recently performed error-handling operation with the current error-handling operation.
20. The non-transitory computer-readable storage medium of claim 18 , wherein the operations further comprise:
performing one or more error-handling operations of the set of error handling operations to recover the data in the adjusted order until data associated to the read error is recovered.