Display apparatus
A display apparatus is disclosed. The display apparatus according to the present disclosure may include a substrate including an active area and a non-active area around the active area, a first shield layer disposed on the substrate, a first thin film transistor including a first semiconductor layer on the first shield layer, a first etch stopper on the first semiconductor layer, a second thin film transistor including a second semiconductor layer on the substrate, and a second etch stopper on the second semiconductor layer.
1 . A display apparatus, comprising:
a substrate including an active area and a non-active area around the active area;
a first shield layer on the substrate;
a first thin film transistor including a first semiconductor layer that is on the first shield layer;
a first etch stopper on the first semiconductor layer;
a second thin film transistor including a second semiconductor layer that is on the substrate; and
a second etch stopper on the second semiconductor layer,
wherein the first thin film transistor further includes:
a first gate electrode on the first etch stopper, and
a first source electrode and a first drain electrode that pass through the first etch stopper and are connected to the first semiconductor layer, and
wherein the first shield layer is connected to the first source electrode.
2 . The display apparatus according to claim 1 , wherein the first thin film transistor is a driving thin film transistor, and the second thin film transistor is a switching thin film transistor.
3 . The display apparatus according to claim 1 , wherein the first thin film transistor is in one of the active area or the non-active area, and the second thin film transistor is in the active area.
4 . The display apparatus according to claim 1 , wherein the first etch stopper comprises at least one of titanium nitride, titanium carbon, aluminum nitride, or titanium aluminum nitride.
5 . The display apparatus according to claim 1 , wherein the second semiconductor layer includes a second source region, a second drain region, and a second channel region located between the second source region and the second drain region, and the second etch stopper is above the second source region and the second drain region, and covers the second source region and the second drain region.
6 . The display apparatus according to claim 1 , wherein the first semiconductor layer comprises a polycrystalline semiconductor layer.
7 . The display apparatus according to claim 1 , wherein the first shield layer overlaps the first semiconductor layer and is below the first semiconductor layer.
8 . The display apparatus according to claim 1 , wherein the second semiconductor layer comprises an oxide semiconductor layer.
9 . The display apparatus according to claim 1 , wherein a thickness of the second etch stopper is larger than a thickness of the first etch stopper.
10 . The display apparatus according to claim 1 , further comprising:
a gate driving circuit on the substrate in the non-active area, the gate driving circuit including at least one of contact holes and a third etch stopper.
11 . The display apparatus according to claim 1 , wherein the first semiconductor layer includes a first source region, a first drain region, and a first channel region located between the first source region and the first drain region, and the first etch stopper is on the first source region and the first drain region, and covers the first source region and the first drain region.
12 . The display apparatus according to claim 11 , wherein the first etch stopper includes a contact hole having a width that is smaller than the first source region and the first drain region, and the first source electrode and the first drain electrode are in contact with the first source region and the first drain region through the contact hole, respectively.
13 . The display apparatus according to claim 1 , further comprising:
a second shield layer between the substrate and the second semiconductor layer,
wherein the second thin film transistor further includes:
a second gate electrode on the second etch stopper; and
a second source electrode and a second drain electrode which pass through the second etch stopper and are connected to the second semiconductor layer, and the second shield layer is connected to the second source electrode.
14 . The display apparatus according to claim 13 , wherein the second shield layer is a storage capacitor.
15 . The display apparatus according to claim 13 , wherein the first gate electrode and the second gate electrode are located on different layers from each other.
16 . The display apparatus according to claim 13 , further comprising:
a third thin film transistor on the substrate, the third thin film transistor including a third semiconductor layer comprising an oxide semiconductor layer, a third gate electrode, a third source electrode, and a third drain electrode; and
a third shield layer overlapping the third semiconductor layer and below the third semiconductor layer,
wherein a distance between the second semiconductor layer and the second shield layer is less than a distance between the third semiconductor layer and the third shield layer.
17 . The display apparatus according to claim 16 , wherein the third source electrode and the third drain electrode comprise a same material as the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode.
18 . A display apparatus, comprising:
a substrate including an active area and a non-active area around the active area;
a first shield layer on the substrate;
a first thin film transistor including a first semiconductor layer on the first shield layer and a source electrode of the first thin film transistor, the first shield layer connected to the source electrode of the first thin film transistor;
a second thin film transistor including a second semiconductor layer on the substrate and a source electrode of the second thin film transistor;
a second shield layer between the substrate and the second semiconductor layer, the second shield layer being connected to the source electrode of the second thin film transistor; and
a third thin film transistor on the substrate, the third thin film transistor including a third semiconductor layer.
19 . The display apparatus according to claim 18 , further comprising:
a third shield layer overlapping the third semiconductor layer and below the third semiconductor layer,
wherein a distance between the second semiconductor layer and the second shield layer is less than a distance between the third semiconductor layer and the third shield layer.
20 . The display apparatus according to claim 18 , further comprising:
a third shield layer overlapping the third semiconductor layer and below the third semiconductor layer,
wherein the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer are on a same layer.
21 . The display apparatus according to claim 18 , wherein the first thin film transistor and the second thin film transistor are driving thin film transistors, and the third thin film transistor is a switching thin film transistor.