IP Library › Granted Patent US 12,617,686
Granted Patent B2
US 12,617,686 · App. 18/214,324 · Granted May 5, 2026

Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide

Inventor: Mark S. Land (Houston, TX)
Assignee: Pallidus, Inc.
C01B32/956C01B32/977C04B35/515C04B35/56C04B35/5603C04B35/571C04B35/80C08G77/20C08G77/50C08L83/04C23C14/0635C30B25/02C30B29/36C04B2235/3418C04B2235/3826C04B2235/3895C04B2235/44C04B2235/48C04B2235/483C04B2235/528C04B2235/5427C04B2235/5436C04B2235/6581C04B2235/72C04B2235/77C04B2235/94C04B2235/96C08G77/12C08G77/80
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,617,686
App. No.
18/214,324
Granted
May 5, 2026
Kind
B2
Abstract

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SIC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

Claims (24)

1 . A method of making a boule for the production of a silicon carbide wafer, having a diameter of from about 6 inches to about 10 inches, the wafer characterized with properties comprising: a dopant and a thickness of about 300 to 800 μm; the method comprising the steps of:

forming a vapor from a doped polymer derived ceramic SiC starting material;

wherein the doped polymer derived ceramic SiC starting material comprises a dopant held by a polymer derived ceramic SiC material;

wherein the doped polymer derived ceramic SiC starting material has a purity of at least about 5 nines;

depositing the vapor on a seed crystal to form a boule; and,

providing the boule to a wafer manufacturing process.

2 . The method of claim 1 , wherein the dopant comprises vanadium.

3 . The method of claim 1 , wherein the dopant consists essentially of vanadium.

4 . The method of claim 1 , wherein the dopant comprises aluminum.

5 . The method of claim 1 , wherein the dopant consists essentially of aluminum.

6 . The method of claim 1 , wherein the dopant comprises boron.

7 . The method of claim 1 , wherein the dopant consists essentially of boron.

8 . The method of claim 1 , wherein the dopant comprises phosphorus.

9 . The method of claim 1 , wherein the dopant consists essentially of phosphorus.

10 . The method of claim 1 , wherein the dopant comprises nitrogen.

11 . The method of claim 1 , wherein the dopant consists essentially of nitrogen.

12 . The method of claim 1 , wherein the wafer is a semi-insulating wafer.

13 . The method of claim 1 , wherein the wafer is an n-type wafer.

14 . The method of claim 1 , wherein the wafer is a p-type wafer.

15 . The method of claim 4 or 6 , wherein the wafer is a p-type wafer.

16 . The method of claim 1, 2 or 3 , wherein the wafer is further characterized with a property comprising an RT greater than or equal to 1E5 Ω·cm.

17 . The method of claim 1, 12, 13 or 14 , wherein the wafer is further characterized with a property comprising orientation: <0001>±0.5° or less.

18 . The method of claim 1, 12, 13 or 14 , wherein the wafer is further characterized with a property comprising a micropipe density of <10 cm-2.

19 . The method of claim 1, 12, 13 or 14 , wherein the wafer is further characterized with a property comprising a Bow/Warp/TTV <45 μm.

Assignments (1)
SECURITY INTEREST Recorded Jan 10, 2025
From: PALLIDUS, INC.
To: R&R PALLIDUS HOLDINGS II LLC, AS ADMINISTRATIVE AGENT
Reel/Frame 069818/0486 →
Continuity (7)
Continuation 17000552 · Aug 24, 2020
Continuation 15275055 · Sep 23, 2016
Continuation In Part 14864125 · Sep 24, 2015
Provisional Application 62232355 · Sep 24, 2015
Provisional Application 62055461 · Sep 25, 2014
Provisional Application 62055497 · Sep 25, 2014
Related Publication 20240190710A1 · Jun 13, 2024
References Cited (137)
US 3520656A · Yates et al. · 1970 [cited by applicant]
US 5686738A · Moustakas · 1997 [cited by applicant]
US 5840242A · Atwell · 1998 [cited by applicant]
US 5856231A · Niemann et al. · 1999 [cited by applicant]
US 5863325A · Kanemoto et al. · 1999 [cited by applicant]
US 5872070A · Dismukes et al. · 1999 [cited by applicant]
US 5895583A · Augustine et al. · 1999 [cited by applicant]
US 5958132A · Takahashi · 1999 [cited by applicant]
US 6063185A · Hunter · 2000 [cited by applicant]
US 6063186A · Irvine et al. · 2000 [cited by applicant]
US 6093253A · Lofgren et al. · 2000 [cited by applicant]
US 6156581A · Vaudo et al. · 2000 [cited by applicant]
US 6218680B1 · Carter, Jr. et al. · 2001 [cited by applicant]
US 6296956B1 · Hunter · 2001 [cited by applicant]
US 6297522B1 · Kordina et al. · 2001 [cited by applicant]
US 6396080B2 · Carter, Jr. et al. · 2002 [cited by applicant]
US 6403982B2 · Carter, Jr. et al. · 2002 [cited by applicant]
US 6497764B2 · Kuhn et al. · 2002 [cited by applicant]
US 6507046B2 · Mueller · 2003 [cited by applicant]
US 6639247B2 · Carter, Jr. et al. · 2003 [cited by applicant]
US 6734461B1 · Shiomi et al. · 2004 [cited by applicant]
US 6814801B2 · Jenny et al. · 2004 [cited by applicant]
US 6943095B2 · Vaudo et al. · 2005 [cited by applicant]
US 7033912B2 · Saxler · 2006 [cited by applicant]
US 7118781B1 · Sumakeris et al. · 2006 [cited by applicant]
US 7147715B2 · Malta et al. · 2006 [cited by applicant]
US 7192482B2 · Mueller et al. · 2007 [cited by applicant]
US 7220313B2 · Fechko, Jr. et al. · 2007 [cited by applicant]
US 7230274B2 · O'Loughlin et al. · 2007 [cited by applicant]
US 7294324B2 · Powell et al. · 2007 [cited by applicant]
US 7314520B2 · Powell et al. · 2008 [cited by applicant]
US 7314521B2 · Powell et al. · 2008 [cited by applicant]
US 7316747B2 · Jenny et al. · 2008 [cited by applicant]
US 7323051B2 · Hobgood et al. · 2008 [cited by applicant]
US 7351286B2 · Leonard et al. · 2008 [cited by applicant]
US 7422634B2 · Powell et al. · 2008 [cited by applicant]
US 7563321B2 · Powell et al. · 2009 [cited by applicant]
US 7601441B2 · Jenny et al. · 2009 [cited by applicant]
US 8147991B2 · Jenny et al. · 2012 [cited by applicant]
US 8216369B2 · Gupta · 2012 [cited by examiner]
US 8384090B2 · Powell et al. · 2013 [cited by applicant]
US 8410488B2 · Basceri et al. · 2013 [cited by applicant]
US 8436366B2 · Harada et al. · 2013 [cited by applicant]
US 8512471B2 · Zwieback et al. · 2013 [cited by applicant]
US 8586998B2 · Inoue et al. · 2013 [cited by applicant]
US 8617505B2 · Tanaka · 2013 [cited by applicant]
US 8618552B2 · Powell et al. · 2013 [cited by applicant]
US 8785946B2 · Powell et al. · 2014 [cited by applicant]
US 8866159B1 · Powell et al. · 2014 [cited by applicant]
US 8940614B2 · Loboda et al. · 2015 [cited by applicant]
US 8951638B2 · Katou et al. · 2015 [cited by applicant]
US 8980445B2 · Leonard et al. · 2015 [cited by applicant]
US 9018639B2 · Loboda et al. · 2015 [cited by applicant]
US 9059118B2 · Jenny et al. · 2015 [cited by applicant]
US 9099377B2 · Basceri et al. · 2015 [cited by applicant]
US 9165779B2 · Loboda et al. · 2015 [cited by applicant]
US 9200381B2 · Leonard et al. · 2015 [cited by applicant]
US 9255344B2 · Harada · 2016 [cited by applicant]
US 9279277B2 · Spurr et al. · 2016 [cited by applicant]
US 9337277B2 · Loboda et al. · 2016 [cited by applicant]
US 9657409B2 · Sandgren et al. · 2017 [cited by applicant]
US 9738991B2 · Loboda · 2017 [cited by applicant]
US 9790619B2 · Leonard et al. · 2017 [cited by applicant]
US 9797064B2 · Loboda et al. · 2017 [cited by applicant]
US 9815943B2 · Sherwood et al. · 2017 [cited by applicant]
US 9815952B2 · Sherwood · 2017 [cited by applicant]
US 9919972B2 · Land et al. · 2018 [cited by applicant]
US 10167366B2 · Hopkins et al. · 2019 [cited by applicant]
US 10294584B2 · Gupta et al. · 2019 [cited by applicant]
US 10611052B1 · Bubel et al. · 2020 [cited by applicant]
US 10753010B2 · Land · 2020 [cited by examiner]
US 11685660B2 · Land · 2023 [cited by examiner]
US 11691925B2 · Hopkins et al. · 2023 [cited by applicant]
US 20030138368A1 · Yadav · 2003 [cited by applicant]
US 20050126471A1 · Jenny · 2005 [cited by applicant]
US 20060046920A1 · Odaka · 2006 [cited by applicant]
US 20060213427A1 · Sugawara et al. · 2006 [cited by applicant]
US 20060225645A1 · Powell · 2006 [cited by examiner]
US 20070034145A1 · Maruyama et al. · 2007 [cited by applicant]
US 20070110657A1 · Hunter · 2007 [cited by applicant]
US 20090220788A1 · Barrett · 2009 [cited by applicant]
US 20110008236A1 · Hinman et al. · 2011 [cited by applicant]
US 20110175024A1 · Lang · 2011 [cited by applicant]
US 20120103249A1 · Gupta · 2012 [cited by applicant]
US 20120114545A1 · Loboda · 2012 [cited by applicant]
US 20120285370A1 · Gupta · 2012 [cited by examiner]
US 20130071643A1 · Harada et al. · 2013 [cited by applicant]
US 20130236387A1 · Fallavollita · 2013 [cited by applicant]
US 20130243682A1 · Park · 2013 [cited by applicant]
US 20130280466A1 · Zwieback · 2013 [cited by examiner]
US 20130309496A1 · Zwieback · 2013 [cited by examiner]
US 20130323152A1 · Aoki et al. · 2013 [cited by applicant]
US 20140274658A1 · Sherwood et al. · 2014 [cited by applicant]
US 20150175750A1 · Hopkins et al. · 2015 [cited by applicant]
US 20160207780A1 · Dukes et al. · 2016 [cited by applicant]
US 20160207781A1 · Dukes et al. · 2016 [cited by applicant]
US 20160207782A1 · Diwanji et al. · 2016 [cited by applicant]
US 20160207783A1 · Hopkins et al. · 2016 [cited by applicant]
US 20160207836A1 · Land et al. · 2016 [cited by applicant]
US 20180066379A1 · Land et al. · 2018 [cited by applicant]
US 20180201546A1 · Land et al. · 2018 [cited by applicant]
US 20180290893A1 · Dukes et al. · 2018 [cited by applicant]
EP 0143122 · 1985 [cited by applicant]
EP 0867958 · 1996 [cited by applicant]
EP 1828446 · 2004 [cited by applicant]
JP 0526599 · 1992 [cited by applicant]
JP 10275617 · 1996 [cited by applicant]
KR 20120136217 · 2012 [cited by applicant]
KR 20120138111 · 2012 [cited by examiner]
RU 83643 · 2009 [cited by applicant]
RU 2389109 · 2010 [cited by applicant]
RU 2524509 · 2014 [cited by applicant]
WO WO2013055016 · 2013 [cited by applicant]
1968, Kosolapova T.Ya.,“Carbidji”, Moscow, Metalurgia, 1968, pp. 49, 197, 201, 258. [cited by applicant]
2000, Ishlinskij A.Yu, “Bol'shoj Enciclopedicheskij Slovar' Polytechnitscheskij”, Moscow, Nauchnoe izdatel'stvo “Bol'shaya Rossijskaya Enciclopedia”, 2000, 88, 510. [cited by applicant]
Feb. 26, 2018, Russian Patent Office, Russian Search Report 2017114129/05(024699). [cited by applicant]
Feb. 26, 2018, Russian Patent Office, Translation of Russina Search Report 2017114129/05(024699). [cited by applicant]
Feb. 26, 2018, Russian Patent Office, Russian Office Action 2017114129/05(024699). [cited by applicant]
Feb. 26, 2018, Russian Patent Office, Translation of Russian Office Action 2017114129/05(024699). [cited by applicant]
May 13, 2007, Lifu Chen, et al., “Effects of Oxidation Curing and Sintering Additives on the Formation of Polymer-Derived Near-Stoichiometric Silicon Carbide Fibers” J. Am. Ceram. Soc. 91[2] 428-436 (2007). [cited by applicant]
Jul. 25, 2018, EPO, Extended Search Report SN 15843769.9. [cited by applicant]
2005, Yuxi Yu, et al., “Synthesis and characterization of polyaluminocarbosilane” J. Mat. Sci. 40 (2005) 2093-2095. [cited by applicant]
1989, K Kijima, et al., “Sintering of ultrafine SiC poweders prepared by plasma CVD” 6053 J. Mat. Sci. 24 (1989). [cited by applicant]
Aug. 10, 2018, EPO, Extended Search Report SN 15844428.1. [cited by applicant]
Sep. 25, 2016, ISASC, 4th International Symposium on New Frontier of Advanced Si-Based Ceramics and Compoosites (2016). [cited by applicant]
2016, Heo, Influence of Impurities SiC powder on high quality SiC crystal growth (Materials Science Forum, 1662.9752 vol. 858, pp. 85-88 May 24, 2016). [cited by applicant]
2012, Vasiliausks, Sublimation Growth and Performace of Cubic Silicon Carbide (Linkopin University, 2012). [cited by applicant]
1999, Kamiya, “Preparation of Silicon Oxycarbide Glass Fibers by Sol-Gel Method-Effec of Starting Sol Composition on Tensile Strength of Fibers” Journal of Sol-Gel Science and Technology 14, 95-102 (1999). [cited by applicant]
1994, Takahshi, Journal of Crystal Growth 135, p. 61-71 (1994). [cited by applicant]
1997, Hofmann, Journal of Crystal Growth 174, p. 669-674 (1997). [cited by applicant]
1998, Schulze, Applied Physics Letters vol. 72 No. 13, p. 1632 (1998). [cited by applicant]
2000, Mueller, Journal of Crystal Growth 211, p. 325-332 (2000). [cited by applicant]
2000, Hobgood, Materials Science Forum vol. 338,342 p. 3-8 (2000). [cited by applicant]
2003, Mueller, Materials Science and Engineering, B80, p. 327-331 (2003). [cited by applicant]
2004, Mueller, Materials Science Forum vol. 457-460 (2004) p. 41-46. [cited by applicant]
2004, Mueller, Eur. Phys. J. Appl. Phys 27, 29-35 (2004). [cited by applicant]
Oct. 8, 2019, JPO, Office Action in JP 2017-536220 (translation). [cited by applicant]