Microelectronic devices designed with mold patterning to create package-level components for high frequency communication systems
Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) components and a second substrate that is coupled to the first substrate. The second substrate includes a first conductive layer of an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. A mold material is disposed on the first and second substrates. The mold material includes a first region that is positioned between the first conductive layer and a second conductive layer of the antenna unit with the mold material being a dielectric material to capacitively couple the first and second conductive layers of the antenna unit.
1 . A microelectronic device, comprising:
a package substrate having a top side above a bottom side, a first sidewall between the top side and the bottom side, and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite the first sidewall;
a die having a top side above a bottom side, a first sidewall between the top side and the bottom side, and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite the first sidewall, wherein the bottom side of the die is coupled to the top side of the package substrate;
a mold material having a top side and a bottom side, a first sidewall between the top side and the bottom side, and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite the first sidewall, wherein the bottom side of the mold material is on the top side of the package substrate, wherein the first sidewall of the mold material is co-planar with the first sidewall of the package substrate, and wherein the second sidewall of the mold material is co-planar with the second sidewall of the package substrate, the mold material having a first portion and a second portion laterally spaced apart from the first portion, the first portion and the second portion having a same vertical height, wherein the first portion of the mold material is on the top side of the die, along the first sidewall of the die, and along the second sidewall of the die;
a through mold connection laterally between the first portion of the mold material and the second portion of the mold material, the through mold connection extending from the top side of the mold material to the top side of the package substrate, and the through mold connection laterally spaced apart from the first sidewall of the die;
a connection laterally spaced apart from the second sidewall of the die;
an electromagnetic radiation interference (EMI) shield on the top side of the mold material, the EMI shield vertically over the die, and the EMI shield extending from the through mold connection to the connection; and
an antenna unit in contact with the second portion of the mold material and in contact with the package substrate.
2 . The microelectronic device of claim 1 , wherein the bottom side of the die is coupled to the top side of the package substrate by a plurality of conductive bumps.
3 . The microelectronic device of claim 1 , wherein the antenna unit comprises a first portion in contact with package substrate, and a second portion above the first portion.
4 . The microelectronic device of claim 1 , wherein the antenna unit comprises a main patch and a parasitic patch.
5 . The microelectronic device of claim 1 , wherein the die is electrically coupled to the antenna unit through the package substrate.
6 . The microelectronic device of claim 1 , wherein the package substrate comprises a ground plane.
7 . The microelectronic device of claim 1 , wherein the package substrate comprises a plurality of conductive layers.
8 . The microelectronic device of claim 1 , further comprising one or more passive devices.
9 . The microelectronic device of claim 1 , wherein the connection is a second through mold connection.