Semiconductor device and method of manufacture
An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.
1. An image sensor, comprising:
a photosensitive sensor;
a floating diffusion node;
a reset transistor comprising a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source;
a source follower transistor comprising a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor; and
a first elongated contact contacting the second source/drain of the reset transistor and the first source/drain of the source follower transistor, wherein:
the first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section,
the horizontal cross-section is parallel to a top surface of a semiconductor layer underlying the first elongated contact,
the second dimension is perpendicular to the first dimension, and
the second dimension is less than the first dimension.
2. The image sensor of claim 1 , comprising:
a transfer transistor comprising a first source/drain coupled to the photosensitive sensor and a second source/drain coupled to the floating diffusion node.
3. The image sensor of claim 1 , comprising:
a second elongated contact contacting the first source/drain of the reset transistor and the floating diffusion node, wherein:
the second elongated contact has a third dimension in the horizontal cross-section and a fourth dimension in the horizontal cross-section,
the third dimension is perpendicular to the fourth dimension, and
the fourth dimension is less than the third dimension.
4. The image sensor of claim 1 , comprising:
a first sidewall spacer adjacent a gate of the reset transistor; and
a second sidewall spacer adjacent the gate of the source follower transistor,
wherein the first elongated contact overlies at least one of the first sidewall spacer or the second sidewall spacer.
5. The image sensor of claim 4 , wherein the first elongated contact contacts the at least one of the first sidewall spacer or the second sidewall spacer.
6. The image sensor of claim 4 , wherein the first elongated contact overlies the first sidewall spacer and the second sidewall spacer.
7. The image sensor of claim 1 , wherein a first sidewall spacer of the gate of the source follower transistor has a first profile in vertical cross-section and a second sidewall spacer of the gate of the source follower transistor has a second profile in vertical cross-section different than the first profile.
8. The image sensor of claim 1 , comprising:
a row select transistor comprising a first source/drain coupled to a second source/drain of the source follower transistor.
9. The image sensor of claim 8 , comprising:
a second elongated contact contacting a second source/drain of the row select transistor, wherein:
the second elongated contact has a third dimension in the horizontal cross-section and a fourth dimension in the horizontal cross-section,
the third dimension is perpendicular to the fourth dimension, and
the fourth dimension is less than the third dimension.
10. The image sensor of claim 9 , comprising:
a third elongated contact contacting the first source/drain of the reset transistor and the floating diffusion node, wherein:
the third elongated contact has a fifth dimension in the horizontal cross-section and a sixth dimension in the horizontal cross-section,
the fifth dimension is perpendicular to the sixth dimension, and
the sixth dimension is less than the fifth dimension.
11. An image sensor, comprising:
a photosensitive sensor;
a floating diffusion node;
a source follower transistor comprising a gate coupled to the floating diffusion node; and
a first elongated contact contacting a first source/drain of the source follower transistor, wherein:
the first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section,
the horizontal cross-section is parallel to a top surface of a semiconductor layer underlying the first elongated contact,
the second dimension is perpendicular to the first dimension, and
the second dimension is less than the first dimension.
12. The image sensor of claim 11 , comprising:
a row select transistor comprising a first source/drain coupled to a second source/drain of the source follower transistor.
13. The image sensor of claim 12 , comprising:
a second elongated contact contacting a second source/drain of the row select transistor, wherein:
the second elongated contact has a third dimension in the horizontal cross-section and a fourth dimension in the horizontal cross-section,
the third dimension is perpendicular to the fourth dimension, and
the fourth dimension is less than the third dimension.
14. The image sensor of claim 12 , wherein a second source/drain of the row select transistor corresponds to an output terminal of a readout circuit of the image sensor.
15. The image sensor of claim 11 , comprising:
a transfer transistor comprising a first source/drain coupled to the photosensitive sensor and a second source/drain coupled to the floating diffusion node.
16. An image sensor, comprising:
a photosensitive sensor;
a floating diffusion node;
a reset transistor comprising a first source/drain coupled to the floating diffusion node;
a source follower transistor comprising a gate coupled to the floating diffusion node; and
a first elongated contact contacting the first source/drain of the reset transistor and the gate of the source follower transistor, wherein:
the first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section,
the horizontal cross-section is parallel to a top surface of a semiconductor layer underlying the first elongated contact,
the second dimension is perpendicular to the first dimension, and
the second dimension is less than the first dimension.
17. The image sensor of claim 16 , comprising:
a row select transistor comprising a first source/drain coupled to a first source/drain of the source follower transistor.
18. The image sensor of claim 17 , comprising:
a second elongated contact contacting a second source/drain of the row select transistor, wherein:
the second elongated contact has a third dimension in the horizontal cross-section and a fourth dimension in the horizontal cross-section,
the third dimension is perpendicular to the fourth dimension, and
the fourth dimension is less than the third dimension.
19. The image sensor of claim 16 , wherein a first sidewall spacer of the gate of the source follower transistor has a first profile in vertical cross-section and a second sidewall spacer of the gate of the source follower transistor has a second profile in vertical cross-section different than the first profile.
20. The image sensor of claim 16 , wherein:
a first sidewall spacer of the gate of the source follower transistor has a surface having a first portion having a first slope, a second portion having a second slope, and a third portion having a third slope,
the second portion is between the first portion and the third portion, and
the second slope is less than the first slope and less than the third slope.