IP Library Granted Patent US 12,719,465
Granted Patent B2
US 12,719,465 · App. 18/218,264 · Granted Aug 25, 2026

Semiconductor device, display apparatus, and electronic device

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Quick Facts
Patent No.
US 12,719,465
App. No.
18/218,264
Filed
Jul 5, 2023
Granted
Aug 25, 2026
Kind
B2
Examiner
PHAM, LONG D
Art Unit
2623
USPC
345/204
Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2023
From: KIMURA, HAJIME; YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 064154/0033 →
Priority Claims (2)
JP 2022-113595 · Jul 15, 2022 · national
JP 2023-064030 · Apr 11, 2023 · national
Continuity (1)
Related Publication 20240030905A1 · Jan 25, 2024
References Cited (17)
US 8476625B2 · Kimura · 2013 [cited by applicant]
US 8999750B2 · Kimura · 2015 [cited by applicant]
US 9201280B2 · Kimura · 2015 [cited by applicant]
US 10002972B2 · Miyake · 2018 [cited by applicant]
US 20080074359A1 · Chung · 2008 [cited by applicant]
US 20130264574A1 · Kimura · 2013 [cited by examiner]
US 20170132985A1 · Umezaki · 2017 [cited by examiner]
US 20180366067A1 · Jang · 2018 [cited by examiner]
US 20200193912A1 · Park et al. · 2020 [cited by applicant]
US 20200312223A1 · Yuan · 2020 [cited by examiner]
US 20220366845A1 · Kimura et al. · 2022 [cited by applicant]
US 20230140806A1 · In · 2023 [cited by examiner]
JP 2010156963A · 2010 [cited by applicant]
JP 2017010000A · 2017 [cited by applicant]
Amano.S et al., “Low Power LC Display Using In—Ga—Zn-Oxide TFTs Based on Variable Frame Frequency”, SID Digest '10 : SID International Symposium Digest of Technical Papers, May 23, 2010, vol. 41, No. 1, pp. 626-629. [cited by applicant]
Matsuda.S et al., “30-nm-Channel-Length C-Axis Aligned Crystalline In—Ga—Zn—O Transistors with Low Off-State Leakage Current and Steep Subthreshold Characteristics”, 2015 Symposium on VLSI Technology : Digest of Technic… [cited by applicant]
Kato.K et al., “Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium-Gallium-Zinc Oxide”, Jpn. J. Appl. Phys. (Japanese Journal of Applied Physics) , 2012, vol. 51, pp… [cited by applicant]