Semiconductor edge and bevel inspection tool system

1. A semiconductor edge and bevel inspection tool system of a wafer comprising:

a first illumination setup being capable of facing a wafer edge and being configured and operable to generate a first illumination radiation along a first illumination axis and to direct at least a portion of the first illumination radiation towards an edge and bevel region of the wafer;

an imaging sensor unit defining a collection optical axis being configured and operable to collect light radiation and to generate sensing data thereof;

and a second illumination setup being configured to be capable of being placed facing said imaging sensor unit and being configured and operable to generate a second illumination radiation along a second illumination axis and to direct at least a portion of the second illumination radiation in a direction substantially parallel to the wafer plane toward said imaging sensor, wherein at least a portion of the second illumination radiation is configured for interacting with at least a portion of the edge and bevel region, wherein the first and the second illumination radiations have substantially opposite directions and wherein second illumination setup has different radiation parameters than the first illumination setup;

wherein said imaging sensor unit is configured and operable to collect a second illumination radiation directed towards said imaging sensor unit by said second illumination setup, as well as a reflected illumination radiation reflected from the edge and bevel region, wherein the reflected illumination radiation is created by the first illumination setup; such that the sensing data is indicative of a boundary between the wafer plane and that of the edge and bevel region.

2. The inspection tool system of claim 1 , wherein the different radiation parameters comprise (i) spectral properties including at least one of intensity, wavelength or angular coverage, (ii) illumination duration (iii) operation modes, or (iv) illumination beam shape and properties.

3. The inspection tool system of claim 1 , wherein at least one of (i) the collection optical axis, (ii) the first illumination axis or (iii) or the second illumination axis do not intersect with the wafer center.

4. The inspection tool system of claim 1 , wherein said first illumination setup is positioned in close proximity to said imaging sensor unit.

5. The inspection tool system of claim 1 , wherein said first illumination setup has an arc-shaped configuration being capable of generating an omnidirectional illumination radiation around the wafer edge.

6. The inspection tool system of claim 1 , wherein said first illumination setup comprises at least one light source defining a certain intensity.

7. The inspection tool system of claim 1 , wherein said second illumination setup is positioned in close proximity to the wafer edge.

8. The inspection tool system of claim 1 , wherein said second illumination setup is configured to be placed below the wafer plane.

9. The inspection tool system of claim 1 , further comprising a fluorescent light source.

10. The inspection tool system of claim 1 , further comprising a third illumination setup being configured to be capable of being placed facing said imaging sensor unit and being configured and operable to generate a third illumination radiation and to direct at least a portion of the third illumination radiation in a direction substantially parallel to the wafer plane toward said imaging sensor, wherein at least a portion of the third illumination radiation is configured for interacting with at least a portion of the edge and bevel region.

11. The inspection tool system of claim 10 , wherein said first illumination setup has an intensity being higher than an intensity defined by either said second illumination setup or said third illumination setup.

12. The inspection tool system of claim 10 , wherein, when said second illumination setup is positioned below the wafer plane, said third illumination setup is positioned above the wafer plane.

13. The inspection tool system of claim 10 , wherein said second illumination setup is positioned at a first predefined distance from said imaging sensor unit and said third illumination setup is positioned at a second predefined distance from said imaging sensor unit, wherein said first predefined distance is smaller than said second predefined distance.

14. The inspection tool system of claim 13 , wherein said second predefined distance is larger than a wafer diameter.

15. The inspection tool system of claim 13 , wherein said second illumination setup or said third illumination setup includes a solid-state light (SSL) of any visible or near visible wavelength.

16. The inspection tool system of claim 10 , wherein at least one of said second illumination setup or said third illumination setup is configured and operable to generate a substantially collimated illumination radiation.

17. The inspection tool system of claim 10 , wherein at least one of said second illumination setup or said third illumination setup comprises an optical guiding unit being configured and operable to direct at least a portion of at least one of the second illumination radiation or the third illumination radiation toward said imaging sensor, such that at least a portion of said second illumination radiation or said third illumination radiation is configured for interacting with at least a portion of the edge and bevel region.

18. The inspection tool system of claim 17 , wherein said optical guiding unit is configured and operable to direct at least a portion of at least one of the second illumination radiation or the third illumination radiation in a direction substantially parallel to the wafer plane.

19. The inspection tool system of claim 17 , wherein said optical guiding unit is configured and operable to direct at least one of the second illumination radiation or the third illumination radiation at a certain non-zero angle relatively to the wafer plane.

20. The inspection tool system of claim 17 , wherein said optical guiding unit comprises at least one prism element, a mirror or a light pipe.

21. The inspection tool system of claim 10 , wherein at least one of said second illumination setup or said third illumination setup are configured and operable to detect edge defects.

22. The inspection tool system of claim 10 , wherein at least one of said second illumination setup or said third illumination setup are configured and operable to detect wafer top surface defects.

23. The inspection tool system of claim 10 , further comprising a control unit being configured and operable for controlling operation of at least one of said first illumination setup, said second illumination setup, said third illumination setup or said imaging sensor unit.

24. The inspection tool system of claim 23 , wherein said control unit is configured and operable to operate at least partially at the same time at least two of said first, second, and third illumination setups.

25. The inspection tool system of claim 1 , wherein said first illumination setup is capable of facing a multi-tier stack edge and is configured and operable to generate a first illumination radiation along a first illumination axis and to direct at least a portion of the first illumination radiation towards an edge and bevel region of the multi-tier stack; and said second illumination setup is configured and operable to generate a second illumination radiation along a second illumination axis and to direct at least a portion of the second illumination radiation in a direction substantially parallel to the multi-tier stack plane toward said imaging sensor, wherein at least a portion of the second illumination radiation is configured for interacting with at least a portion of the multi-tier edge and bevel region, wherein said imaging sensor unit is configured and operable to collect a second illumination radiation directed towards said imaging sensor unit by said second illumination setup, as well as a reflected illumination radiation reflected from the multi-tier edge and bevel region; such that the sensing data is indicative of a boundary between the multi-tier plane and that of the multi-tier edge and bevel region.