Vertically stacked type image sensors and electronic devices including the same
Provided is a vertically stacked type image sensor including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels stacked vertically, wherein the plurality of sub-pixels have a layer structure that is configured to generate an absorption resonance at different wavelengths of light.
1 . A vertically stacked type image sensor comprising:
a plurality of pixels, each of the plurality of pixels comprising a plurality of sub-pixels stacked vertically and symmetrical with respect to a center line; and
an insulating layer between two adjacent pixels and directly contacting a side surface of each of the plurality of sub-pixels included in each of the two adjacent pixels,
wherein the plurality of sub-pixels have a layer structure that is configured to generate an absorption resonance at different wavelengths of light, and
wherein the center line of each of the two adjacent pixels are inclined with respect to each other.
2 . The vertically stacked type image sensor of claim 1 , wherein the plurality of sub-pixels have different diameters from each other.
3 . The vertically stacked type image sensor of claim 1 , wherein the plurality of sub-pixels comprise:
a red sub-pixel configured to generate an absorption resonance with respect to a wavelength of red light;
a green sub-pixel configured to generate an absorption resonance with respect to a wavelength of green light; and
a blue sub-pixel configured to generate an absorption resonance with respect to a wavelength of blue light,
wherein the red sub-pixel, the green sub-pixel, and the blue sub-pixel are sequentially vertically stacked, and
wherein a width of the red sub-pixel is greater than a width of the green sub-pixel, and the width of the green sub-pixel is greater than a width of the blue sub-pixel.
4 . The vertically stacked type image sensor of claim 1 , wherein the plurality of sub-pixels are stacked to form the layer structure in which diameters of the plurality of sub-pixels decrease vertically upward.
5 . The vertically stacked type image sensor of claim 1 , wherein heights of some sub-pixels of the plurality of sub-pixels are different from heights of the remaining sub-pixels of the plurality of sub-pixels.
6 . The vertically stacked type image sensor of claim 1 , wherein each sub-pixel of the plurality of sub-pixels comprises a P-type semiconductor layer and an N-type semiconductor layer vertically stacked.
7 . The vertically stacked type image sensor of claim 6 , further comprising a first electrode wiring connected to the P-type semiconductor layer and a second electrode wiring connected to the N-type semiconductor layer.
8 . The vertically stacked type image sensor of claim 1 , wherein the insulating layer and a height of any one sub-pixel selected from among the plurality of sub-pixels are configured to be in a complementary relationship with respect to light absorptivity of the selected one sub-pixel.
9 . The vertically stacked type image sensor of claim 1 , wherein the plurality of pixels are provided on a plane.
10 . The vertically stacked type image sensor of claim 9 , wherein the two adjacent pixels among the plurality of pixels are spaced apart by a first distance at which absorption resonances of the plurality of sub-pixels included in the two adjacent pixels is maintained.
11 . The vertically stacked type image sensor of claim 1 , wherein the plurality of pixels are provided on a curved surface.
12 . The vertically stacked type image sensor of claim 11 , wherein the curved surface is a Petzval surface.
13 . The vertically stacked type image sensor of claim 1 , wherein the plurality of sub-pixels comprise four or more sub-pixels.
14 . The vertically stacked type image sensor of claim 13 , wherein a number of sub-pixels included in the plurality of sub-pixels correspond to a number of sub-pixels required to obtain a hyperspectral image.
15 . An electronic device comprising:
a vertically stacked type image sensor comprising:
a plurality of pixels, each of the plurality of pixels comprising a plurality of sub-pixels stacked vertically and symmetrical with respect to a center line; and
an insulating layer between two adjacent pixels and directly contacting a side surface of each of the plurality of sub-pixels included in each of the two adjacent pixels,
wherein the plurality of sub-pixels have a layer structure that is configured to generate an absorption resonance at different wavelengths of light, and
wherein the center line of each of the two adjacent pixels are inclined with respect to each other.
16 . The electronic device of claim 15 , wherein the plurality of sub-pixels have different diameters from each other.
17 . The electronic device of claim 15 , wherein the plurality of sub-pixels comprise:
a red sub-pixel configured to generate an absorption resonance with respect to a wavelength of red light;
a green sub-pixel configured to generate an absorption resonance with respect to a wavelength of green light; and
a blue sub-pixel configured to generate an absorption resonance with respect to a wavelength of blue light,
wherein the red sub-pixel, the green sub-pixel, and the blue sub-pixel are sequentially vertically stacked, and
wherein a width of the red sub-pixel is greater than a width of the green sub-pixel, and the width of the green sub-pixel is greater than a width of the blue sub-pixel.
18 . The electronic device of claim 15 , wherein the plurality of sub-pixels are stacked to form the layer structure in which diameters of the plurality of sub-pixels decrease vertically upward.