Granted Patent B2

US 12,553,147 · App. 18/229,051 · Granted Feb 17, 2026

Inventors: John P. Ciraldo (Clarksburg, MD); Joshua Blackketter (Laurel, MD); Jonathan Levine-Miles (Silver Spring, MD)

Assignee: Advanced Diamond Holdings, LLC

C30B25/04C30B25/20C30B29/04C30B33/08

Abstract

Claims (32)

1 . A method of growing diamond, the method comprising:

providing a single-crystal diamond substrate having a growth surface, the single-crystal diamond substrate having an intrinsic dopant concentration;

positioning a diamond growth inhibitor over a diamond inhibition area of the growth surface;

positioning a silicon pad over the single crystal diamond substrate;

depositing a first diamond portion having a first dopant concentration using chemical vapor deposition over a growth area of the growth surface, the first dopant concentration being different from the intrinsic dopant concentration, wherein depositing comprises growing polycrystalline diamond over the silicon pad; and

removing the diamond growth inhibitor and non-diamond carbon thereon.

2 . The method of claim 1 , wherein the diamond growth inhibitor is configured to cause deposition of unbonded or Sp2 bonded carbon.

3 . The method of claim 1 , further comprising:

etching exposed regions of the growth surface not covered by diamond growth inhibitor, prior to removing the diamond growth inhibitor, to form etched regions, the diamond growth inhibitor functioning as a mask preventing or reducing the formation of etched regions beneath the diamond growth inhibitor;

positioning the diamond growth inhibitor over a second diamond inhibition area of the growth surface;

etching the growth surface to form second etched regions, the diamond growth inhibitor functioning as a mask preventing or reducing the formation of the second etched regions beneath the diamond growth inhibitor; and

depositing a second diamond portion having a second dopant concentration using chemical vapor deposition, the second diamond portion having a different dopant concentration from the first diamond portion.

4 . The method as defined by claim 3 , further comprising removing the diamond growth inhibitor over the second diamond inhibition area of the growth surface.

5 . The method as defined by claim 3 , wherein the first doped diamond portion and the second doped diamond portion are single crystal.

6 . The method as defined by claim 1 , wherein amorphous carbon deposits over the diamond growth inhibitor.

7 . The method as defined by claim 1 , wherein the diamond growth inhibitor is formed from gold.

8 . The method as defined by claim 1 , wherein the diamond growth inhibitor is formed from aluminum oxide.

9 . The method as defined by claim 1 , wherein the first doped diamond portion and the second doped diamond portion form a p-n junction or PIN diode.

10 . The method as defined by claim 1 , wherein the first doped diamond portion and the second doped diamond portion form a semiconductor device.

11 . The method as defined by claim 9 , further comprising tracing lines to contact pads and electrically coupling the device to a power source.

12 . The method as defined by claim 1 , wherein amorphous carbon forms on the diamond growth inhibitor when depositing diamond using chemical vapor deposition.

13 . The method as defined by claim 1 , further comprising an adherence portion between the diamond growth inhibitor and the diamond growth surface.

14 . The method as defined by claim 1 , further comprising polishing to remove the diamond growth inhibitor.

15 . The method as defined by claim 1 , further comprising embedding the first doped portion and the second doped portion by depositing undoped diamond over the growth surface.

16 . The method as defined by claim 1 , wherein doped diamond of a given color is selectively deposited to form a logo in the diamond.

17 . A diamond grown using the process of claim 1 .

18 . A diamond comprising:

a single-crystal undoped diamond;

a first single-crystal diamond portion having a first dopant concentration embedded in the single crystal diamond;

a second single-crystal diamond portion having a second dopant concentration embedded in the single crystal diamond a silicon pad positioned over the single-crystal diamond; and

polycrystalline diamond grown over the silicon pad.

19 . The diamond of claim 18 , wherein the first single-crystal diamond portion is boron doped and/or the second single-crystal diamond portion is nitrogen doped.

Assignments (2)

Continuity (2)

References Cited (17)