DEFECT REDUCTION IN DIAMOND

1 . A method of growing diamond, the method comprising:

providing an initial substrate having a growth surface;

positioning a first layer of diamond growth inhibitor over a first area of the growth surface;

growing diamond on the growth surface using chemical vapor deposition, wherein growing the diamond includes growing a lateral overgrowth region over the diamond growth inhibitor,

positioning a second layer of diamond growth inhibitor over a second area of the growth surface that is at least partially offset from the first area, after growing the lateral overgrowth region, wherein the second layer of diamond growth inhibitor is at a height that is greater than or equal to the lateral overgrowth region.

2 . The method of claim 1 , further comprising repeating the steps of positioning diamond growth inhibitor over an offset area of the growth surface and growing diamond on the growth surface using chemical vapor deposition until threading defect density is reduced by at least 50% relative to the initial substrate in a reduced defect area.

3 . The method of claim 2 , wherein the reduced defect area has a maximum dimension of at least 2 inches.

4 . The method as defined by claim 1 , further comprising:

growing diamond on the growth surface using chemical vapor deposition, wherein the grown diamond includes a second lateral overgrowth region over the diamond growth inhibitor.

5 . The method as defined by claim 1 , wherein the first layer of diamond growth inhibitor and the second layer of diamond growth inhibitor are formed from the same material.

6 . The method as defined by claim 1 , wherein the lateral overgrowth region and the second lateral overgrowth region are on different layers.

7 . The method as defined by claim 1 , further comprising:

positioning a third diamond growth inhibitor over a third area of the growth surface that is at least partially offset form the first area and the second area; and

growing diamond on the growth surface using chemical vapor deposition, wherein the grown diamond includes a third lateral overgrowth region over the diamond growth inhibitor.

8 . The method as defined by claim 7 , wherein the first area of the growth surface, the second area of the growth surface, and the third area of the growth surface do not overlap.

9 . The method as defined by claim 1 , further comprising:

repeating the steps of:

positioning diamond growth inhibitor over an area of the growth surface; and

growing diamond on the growth surface using chemical vapor deposition, wherein the grown diamond includes an additional overgrowth region over the diamond growth inhibitor,

until substantially all of the growth surface of the diamond is defect free.

10 . The method as defined by claim 1 , further comprising:

growing a large-area high-quality grown diamond region.

11 . The method as defined by claim 10 , further comprising: removing the large-area high-quality grown diamond region from the remainder of the grown diamond.

12 . The method as defined by claim 1 , wherein the substrate is a single-crystal diamond substrate.

13 . The method as defined by claim 1 , wherein growing diamond is heteroepitaxial.

14 . The method as defined by claim 1 , and the substrate is formed from a non-diamond material

15 . The method as defined by claim 1 , wherein the grown diamond is single crystal.

16 . The method as defined by claim 1 , wherein amorphous carbon deposits over the diamond growth inhibitor.

17 . The method as defined by claim 1 , wherein the diamond growth inhibitor is formed from gold.

18 . The method as defined by claim 1 , wherein the diamond growth inhibitor is formed from aluminum oxide.

19 . The method as defined by claim 1 , further comprising:

etching the growth surface to form etched regions, the diamond growth inhibitor functioning as a mask preventing or reducing the formation of etched regions beneath the diamond growth inhibitor;

depositing a first doped diamond portion using chemical vapor deposition;

removing the diamond growth inhibitor;

positioning the diamond growth inhibitor over a second area of the growth surface;

etching the growth surface to form second etched regions, the diamond growth inhibitor functioning as a mask preventing or reducing the formation of the second etched regions beneath the diamond growth inhibitor;

depositing a second doped diamond portion using chemical vapor deposition, the second doped diamond portion having a different doping concentration from the first doped diamond portion.

20 . The method as defined by claim 1 , wherein the doped diamond portion includes boron, nitrogen, silicon, and/or phosphorous as dopants.