Electronic device
An electronic device includes a substrate, a first transistor, a second transistor and a conductor. The first transistor is disposed on the substrate and comprises an oxide semiconductor layer. The second transistor is disposed on the substrate and comprises a silicon semiconductor layer. The conductor is electrically connected to the oxide semiconductor layer and the silicon semiconductor layer.
1. An electronic device, comprising:
a substrate;
a first transistor disposed on the substrate and comprising an oxide semiconductor layer;
a second transistor disposed on the substrate and comprising a silicon semiconductor layer; and
a conductor electrically connected to the oxide semiconductor layer and the silicon semiconductor layer.
2. The electronic device as claimed in claim 1 , wherein the second transistor further comprises a gate electrode disposed on the silicon semiconductor layer.
3. The electronic device as claimed in claim 1 , wherein the first transistor further comprises a gate electrode disposed under the oxide semiconductor layer.
4. The electronic device as claimed in claim 1 , wherein the silicon semiconductor layer is disposed between the substrate and the oxide semiconductor layer.
5. The electronic device as claimed in claim 1 , wherein the oxide semiconductor layer is disposed on the silicon semiconductor layer.
6. The electronic device as claimed in claim 1 , wherein the conductor is directly connected to the oxide semiconductor layer and the silicon semiconductor layer.
7. The electronic device as claimed in claim 1 , wherein the conductor is directly connected to the oxide semiconductor layer.
8. The electronic device as claimed in claim 1 , wherein the conductor is directly connected to the silicon semiconductor layer.
9. The electronic device as claimed in claim 1 , wherein the second transistor receives a signal.
10. The electronic device as claimed in claim 1 , wherein the first transistor comprises a bottom gate electrode, the second transistor comprises a top gate electrode, and the top gate electrode and the bottom gate electrode are located in a same layer.
11. The electronic device as claimed in claim 1 , further comprising a gate driving circuit outputting a signal and a driving circuit receiving the signal, and the driving circuit comprises the first transistor and the second transistor.
12. The electronic device as claimed in claim 11 , wherein the second transistor receives the signal.
13. The electronic device as claimed in claim 11 , wherein the first transistor is connected to a diode.