Detection apparatus
A detection apparatus includes: a substrate; photodiodes each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; transistors provided for the respective photodiodes; an insulating film provided so as to cover the transistors; a first inorganic insulating film provided so as to cover the photodiodes; a first organic insulating film provided on the upper side of the first inorganic insulating film; and an upper conductive layer provided on the upper side of the first organic insulating film and electrically coupled to the photodiode. Each photodiode includes: first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are directly in contact with one another; and a second region in which the p-type semiconductor layer and the i-type semiconductor layer are separate from each other. The adjacent first regions are coupled together by the p-type semiconductor layer.
1 . A detection apparatus comprising:
a substrate;
a plurality of photodiodes that are arranged on the substrate and each comprises a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked on the substrate;
a plurality of transistors provided for the respective photodiodes;
an insulating film provided on the upper side of the substrate so as to cover the transistors;
a first inorganic insulating film provided on the upper side of the insulating film so as to cover the photodiodes;
a first organic insulating film provided on the upper side of the first inorganic insulating film; and
an upper conductive layer that is provided on the upper side of the first organic insulating film and is electrically coupled to the photodiode through a contact hole passing through the first inorganic insulating film and the first organic insulating film in a thickness direction of the first inorganic insulating film and the first organic insulating film,
wherein each of the photodiodes comprises:
a plurality of first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked so as to be directly in contact with one another; and
a second region in which at least the p-type semiconductor layer and the i-type semiconductor layer are stacked so as to be separate from each other, and
wherein the adjacent first regions are coupled together at least by the p-type semiconductor layer.
2 . The detection apparatus according to claim 1 , further comprising:
a second inorganic insulating film provided on the upper side of the first organic insulating film so as to cover the upper conductive layer; and
a second organic insulating film provided on the upper side of the second inorganic insulating film.
3 . The detection apparatus according to claim 2 ,
wherein the first inorganic insulating film has a larger thickness than that of the second inorganic insulating film.
4 . The detection apparatus according to claim 1 , further comprising an intermediate conductive layer provided on the upper side of each photodiode,
wherein the upper conductive layer is in contact with the intermediate conductive layer at a bottom of the contact hole.
5 . The detection apparatus according to claim 4 ,
wherein the first inorganic insulating film has a larger thickness than a total thickness of the upper conductive layer and the intermediate conductive layer.
6 . The detection apparatus according to claim 1 ,
wherein the p-type semiconductor layer is provided in the same layer as a semiconductor layer of the transistors.
7 . The detection apparatus according to claim 1 ,
wherein the first regions are arranged in a triangular lattice pattern in plan view in a direction orthogonal to the substrate.
8 . A detection apparatus comprising:
a substrate;
a plurality of photodiodes that are arranged on the substrate and each comprises a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked on the substrate;
a first inorganic insulating film provided so as to cover the photodiodes;
a first organic insulating film provided on the upper side of the first inorganic insulating film; and
an upper conductive layer that is provided on the upper side of the first organic insulating film and is electrically coupled to the photodiode through a contact hole passing through the first inorganic insulating film and the first organic insulating film in a thickness direction of the first inorganic insulating film and the first organic insulating film,
wherein each of the photodiodes comprises a plurality of first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked so as to be directly in contact with one another, and
wherein among the first regions, adjacent two first regions are coupled together by the p-type semiconductor layer.
9 . The detection apparatus according to claim 8 , further comprising:
a second inorganic insulating film provided on the upper side of the first organic insulating film so as to cover the upper conductive layer; and
a second organic insulating film provided on the upper side of the second inorganic insulating film.
10 . The detection apparatus according to claim 9 ,
wherein the first inorganic insulating film has a larger thickness than that of the second inorganic insulating film.
11 . The detection apparatus according to claim 8 , further comprising an intermediate conductive layer provided on the upper side of each photodiode,
wherein the upper conductive layer is in contact with the intermediate conductive layer at a bottom of the contact hole.
12 . The detection apparatus according to claim 11 ,
wherein the first inorganic insulating film has a larger thickness than a total thickness of the upper conductive layer and the intermediate conductive layer.
13 . The detection apparatus according to claim 8 ,
wherein each of the photodiodes further comprises a second region in which the p-type semiconductor layer and the i-type semiconductor layer are stacked so as to be separate from each other, and
wherein the second region is located between the two first regions.
14 . The detection apparatus according to claim 13 ,
wherein the second region comprises at least one insulating film located between the p-type semiconductor layer and the i-type semiconductor layer.
15 . The detection apparatus according to claim 14 ,
wherein the second region comprises a plurality of the insulating film located between the p-type semiconductor layer and the i-type semiconductor layer.
16 . A detection apparatus comprising:
a substrate; and
a plurality of photodiodes that are arranged on the substrate and each comprises a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked on the substrate,
wherein each of the photodiodes comprises a plurality of first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked so as to be directly in contact with one another, and
wherein among the first regions, adjacent two first regions are coupled together by the p-type semiconductor layer.
17 . The detection apparatus according to claim 16 ,
wherein each of the photodiodes further comprises a second region in which the p-type semiconductor layer and the i-type semiconductor layer are stacked so as to be separate from each other, and
wherein the second region is located between the two first regions.
18 . The detection apparatus according to claim 17 ,
wherein the second region comprises at least one insulating film located between the p-type semiconductor layer and the i-type semiconductor layer.
19 . The detection apparatus according to claim 16 ,
wherein among the first regions, two or more first regions are coupled together by the p-type semiconductor layer.
20 . The detection apparatus according to claim 17 ,
wherein each of the photodiodes further comprises a third region comprising the p-type semiconductor layer,
wherein the p-type semiconductor layer of the third region overlaps neither the i-type semiconductor layer nor the n-type semiconductor layer, and
wherein the third region couples the one second region and one of the first regions that is not adjacent to the one second region.