Display panel and manufacturing method thereof

1. A method of manufacturing a display panel, comprising:

providing a substrate;

forming a switch assembly on the substrate, the switch assembly comprising an indium gallium zinc oxide (IGZO) layer; and

forming a light-sensing assembly to a side of the switch assembly;

wherein the operation of forming the switch assembly comprising the IGZO layer on the substrate comprises forming an etching barrier layer on the IGZO layer; and

wherein the operation of forming the light-sensing assembly to the side of the switch assembly comprises forming the light-sensing assembly on an extended portion of the etching barrier layer.

2. The method according to claim 1 , wherein the operation of forming the switch assembly comprises:

providing a glass substrate as the substrate;

forming a gate electrode metal layer, a gate insulation layer, the IGZO layer, an etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence thus forming the switch assembly, wherein the source electrode layer and the drain electrode layer are located in a same layer.

3. The method according to claim 1 , wherein the operation of forming the light-sensing assembly on the extended portion of the etching barrier layer comprises:

forming a light-sensing metal layer on the extended portion of the etching barrier layer;

forming the light-sensing assembly on the light-sensing metal layer; and

forming a transparent conducting layer on the light-sensing assembly.

4. The method according to claim 3 , wherein the operation of forming the light-sensing assembly on the light-sensing metal layer comprises:

forming a P-type semiconductor layer on the light-sensing metal layer;

forming an intrinsic semiconductor layer on the P-type semiconductor layer; and

forming an N-type semiconductor layer on the intrinsic semiconductor layer.

5. The method according to claim 4 , further comprising disposing a passivation layer to cover the switch assembly and the light-sensing assembly.

6. The method according to claim 5 , further comprising disposing a transparent conducting layer on the passivation layer at positions corresponding to the switch assembly and the light-sensing assembly.

7. The method according to claim 2 , wherein a light-sensing metal layer is disposed on the extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer;

wherein the light-sensing metal layer, the source electrode layer, and the drain electrode layer are located in a same layer.