Multilayered capacitor and manufacturing method thereof
A multilayered capacitor includes a capacitor body including a dielectric layer and an internal electrode, and an external electrode outside the capacitor body, wherein the dielectric layer includes a plurality of dielectric crystal grains, the dielectric crystal grains include Ba x (Ti 1-y Zr y )O 3 as a main component and satisfy 0<y≤0.0018 at a center of the dielectric crystal grains, D50 of the dielectric crystal grains is about 130 nm to about 170 nm, and a coefficient of variation (standard deviation of size/D50) of the dielectric crystal grain size is 35% to 45%.
1 . A multilayered capacitor, comprising
a capacitor body including a dielectric layer and an internal electrode, and
an external electrode disposed on an outer surface of the capacitor body,
wherein the dielectric layer includes a plurality of dielectric crystal grains,
at least one of the plurality of dielectric crystal grains includes Ba x (Ti 1-y Zr y )O 3 wherein 0.995≤x≤1.010 as a main component and satisfy 0<y≤0.0018 at a center of the dielectric crystal grains,
D50 of the plurality of dielectric crystal grains is about 130 nm to about 170 nm, and
a coefficient of variation (standard deviation of size/D50) of the plurality of dielectric crystal grain is 35% to 45%.
2 . The multilayered capacitor of claim 1 , wherein
at least one of the plurality of dielectric crystal grains satisfies 0.00005<y≤0.0018 at the center of the plurality of dielectric crystal grains.
3 . The multilayered capacitor of claim 1 , wherein
at least one of the plurality of dielectric crystal grains includes about 0.5 parts by mole to about 1.0 part by mole of Dy 2 O 3 , about 0.25 parts by mole to about 0.75 parts by mole of Tb 2 O 3 , 0 parts by mole to about 0.3 parts by mole of MnO 2 , about 0.05 parts by mole to about 0.15 parts by mole of V 2 O 5 , about 1.0 part by mole to about 2.0 parts by mole of BaCO 3 , about 0.5 parts by mole to about 3.0 parts by mole of SiO 2 , and about 0.4 parts by mole to about 0.6 parts by mole of Al 2 O 3 as subcomponents based on 100 parts by mole of the main component.
4 . The multilayered capacitor of claim 3 , wherein
at least one of the plurality of dielectric crystal grains has a core-shell structure,
a shell of the core-shell structure includes all subcomponents in an amount of greater than about 0.1 moles and less than about 30.0 moles relative to 100 moles of the main component, and
a core of the core-shell structure includes a total amount of the subcomponents in an amount of less than or equal to about 0.1 moles relative to 100 moles of the main component.
5 . The multilayered capacitor of claim 1 , wherein
an average thickness of the dielectric layer is about 2.0 μm to about 3.5 μm.
6 . A multilayered capacitor, comprising
a capacitor body including a dielectric layer and an internal electrode, and
an external electrode disposed on an outer surface of the capacitor body,
wherein the dielectric layer includes a plurality of dielectric crystal grains,
at least one of the plurality of dielectric crystal grains includes Ba x (Ti 1-y Zr y )O 3 as a main component and satisfy 0<y≤0.0018 at a center of the dielectric crystal grains, and
at least one of the plurality of dielectric crystal grains include about 0.5 parts by mole to about 1.0 part by mole of Dy 2 O 3 , about 0.25 parts by mole to about 0.75 parts by mole of Tb 2 O 3 , 0 parts by mole to about 0.3 parts by mole of MnO 2 , about 0.05 parts by mole to about 0.15 parts by mole of V 2 O 5 , about 1.0 part by mole to about 2.0 parts by mole of BaCO 3 , about 0.5 parts by mole to about 3.0 parts by mole of SiO 2 , and about 0.4 parts by mole to about 0.6 parts by mole of Al 2 O 3 as subcomponents based on 100 parts by mole of the main component.
7 . The multilayered capacitor of claim 6 , wherein
D50 of the plurality of dielectric crystal grains is about 130 nm to about 170 nm.
8 . The multilayered capacitor of claim 6 , wherein
a coefficient of variation (standard deviation of size/D50) of the plurality of dielectric crystal grain is about 35% to about 45%.
9 . The multilayered capacitor of claim 6 , wherein
an average thickness of the dielectric layer is about 2.0 μm to about 3.5 μm.
10 . The multilayered capacitor of claim 6 , wherein
at least one of the plurality of dielectric crystal grains has a core-shell structure,
wherein a shell of the core-hell structure includes the subcomponents in an amount of greater than about 0.1 moles and less than about 30.0 moles based on 100 moles of the main component, and
a core of the core-shell structure includes the subcomponents in an amount of less than or equal to about 0.1 moles based on 100 moles of the main component.