IP Library Granted Patent US 12,537,136
Granted Patent B2
US 12,537,136 · App. 18/235,067 · Granted Jan 27, 2026

Multilayered capacitor and manufacturing method thereof

Inventors: Myungwoo Lee (Suwon-si, KR); Haesol Jung (Suwon-si, KR); Jinseong Kim (Suwon-si, KR); Bo Young Kim (Suwon-si, KR); Hyojin Kim (Suwon-si, KR)
Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
H01G4/30C04B35/468H01G4/008H01G4/012H01G4/1227
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Quick Facts
Patent No.
US 12,537,136
App. No.
18/235,067
Granted
Jan 27, 2026
Kind
B2
Abstract

A multilayered capacitor includes a capacitor body including a dielectric layer and an internal electrode, and an external electrode outside the capacitor body, wherein the dielectric layer includes a plurality of dielectric crystal grains, the dielectric crystal grains include barium titanate as a main component, a mole ratio of barium to titanium (Ba/Ti mole ratio) at a center of the dielectric crystal grains is about 0.9797 to about 0.9943, and a coefficient of variation (standard deviation of size/D50) of the dielectric crystal grain size is about 30% and about 43%.

Claims (48)

1 . A multilayered capacitor, comprising

a capacitor body including a dielectric layer and an internal electrode, and

an external electrode outside the capacitor body,

wherein the dielectric layer includes a plurality of dielectric crystal grains,

at least one the plurality of dielectric crystal grains includes barium titanate as a main component, a mole ratio of barium to titanium (Ba/Ti mole ratio) at a center of at least one of the plurality of dielectric crystal grains is about 0.9797 to about 0.9943,

a coefficient of variation (standard deviation of size/D50) of the plurality of dielectric crystal grain is between about 30% and about 43%, and

the dielectric crystal grains include about 0.1 to about 1.0 part by mole of Dy 2 O 3 , about 0.1 to about 1.0 part by mole of Tb 2 O 3 , 0 to about 0.2 parts by mole of MnO 2 , 0 to about 0.15 parts by mole of V 2 O 5 , about 1.5 to about 3.3 parts by mole of BaCO 3 , about 0.5 to about 4.0 parts by mole of SiO 2 , about 0.4 to about 0.6 parts by mole of Al 2 O 3 , and about 0 to about 0.8 parts by mole of CaCO 3 as a subcomponent based on 100 parts by mole of the main component.

2 . The multilayered capacitor of claim 1 , wherein

the mole ratio of barium to titanium (Ba/Ti) at the center of at least one of the plurality of dielectric crystal grains is about 0.9803 to about 0.9941.

3 . The multilayered capacitor of claim 1 , wherein

the coefficient of variation (standard deviation of size/D50) of the plurality of dielectric crystal grain is about 35% and about 42%.

4 . The multilayered capacitor of claim 1 , wherein

D50 of the dielectric crystal grains is about 180 nm to about 220 nm.

5 . The multilayered capacitor of claim 1 , wherein

the main component includes BaTiO 3 , Ba(Ti, Zr)O 3 , Ba(Ti, Sn)O 3 , (Ba, Ca)TiO 3 , (Ba, Ca)(Ti, Zr)O 3 , (Ba, Ca)(Ti, Sn)O 3 , (Ba, Sr)TiO 3 , (Ba, Sr)(Ti, Zr)O 3 , (Ba, Sr)(Ti, Sn)O 3 , or combinations thereof.

6 . The multilayered capacitor of claim 1 , wherein

at least one of the dielectric crystal grains has a core-shell structure,

the shell includes all subcomponents in an amount of greater than about 0.1 moles and less than about 30.0 moles relative to 100 moles of the main component, and

the core includes all subcomponents in an amount of less than or equal to about 0.1 moles relative to 100 moles of the main component.

7 . The multilayered capacitor of claim 1 , wherein

an average thickness of the dielectric layer is about 4.0 μm to about 6.0 μm.

8 . A method for manufacturing the multilayered capacitor according to claim 1 , comprising

preparing a dielectric powder having a mole ratio of barium to titanium (Ba/Ti) of about 0.9797 to about 0.9943,

preparing a dielectric green sheet using the dielectric powder by forming a conductive paste layer on a surface of the dielectric green sheet,

stacking dielectric green sheets having the conductive paste layer formed thereon to prepare a dielectric green sheet stack,

firing the dielectric green sheet stack to form a capacitor body, and

disposing an external electrode on one surface of the capacitor body.

9 . The method of claim 8 , wherein

the preparing of the dielectric powder includes

wet-mixing a barium (Ba) precursor and a titanium (Ti) precursor while adjusting the mole ratio of barium to titanium (Ba/Ti) to about 0.9797 to about 0.9943 to prepare a raw material mixture, and

calcining the raw material mixture to prepare a dielectric powder.

10 . The method of claim 9 , wherein

the preparing of the dielectric powder further includes drying and dry-grinding the raw material mixture.

11 . The method of claim 9 , wherein

the preparing of the dielectric powder further includes wet-grinding the dielectric powder, followed by drying and dry-grinding.

12 . The method of claim 9 , wherein

the barium (Ba) precursor includes BaO 2 , BaTiO 3 , BaCO 3 , BaO, or combinations thereof.

13 . The method of claim 9 , wherein

the titanium (Ti) precursor includes titanium dioxide, titanium diisopropoxide diacetyl acetonate (TPA), titanium alkoxide, or combinations thereof.

14 . The method of claim 9 , wherein

the calcining is performed at about 800° C. to about 1000° C. for about 1 hour to about 8 hours under a vacuum or normal pressure atmosphere.

15 . The method of claim 8 , wherein

the dielectric green sheet is manufactured by

mixing dielectric powder and subcomponent powder to prepare a mixture of main and subcomponents,

mixing the mixture of main and subcomponents with a solvent and an additive to prepare a dielectric slurry, and

molding the dielectric slurry into a sheet shape.

16 . The method of claim 15 , wherein

the subcomponent powder includes about 0.5 parts by mole to about 1.0 part by mole of Dy 2 O 3 , about 0.25 parts by mole to about 0.75 parts by mole of Tb 2 O 3 , 0 parts by mole to about 0.3 parts by mole of MnO 2 , about 0.05 parts by mole to about 0.15 parts by mole of V 2 O 5 , about 1.0 part by mole to about 2.0 parts by mole of BaCO 3 , about 0.5 parts by mole to about 3.0 parts by mole of SiO 2 , and about 0.4 parts by mole to about 0.6 parts by mole of Al 2 O 3 based on 100 parts by mole of the dielectric powder.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE SPELLING OF THE SECOND INVENTOR'S NAME PREVIOUSLY RECORDED ON REEL 64643 FRAME 968. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Nov 7, 2025
From: LEE, MYUNGWOO; JUNG, HAESOL; KIM, JINSEONG; KIM, BO YOUNG; KIM, HYOJIN
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 072820/0438 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 18, 2023
From: LEE, MYUNGWOO; JUNG, HAEOL; KIM, JINSEONG; KIM, BO YOUNG; KIM, HYOJIN
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 064643/0968 →
Priority Claims (1)
KR 10-2023-0029328 · Mar 6, 2023 · national
Continuity (1)
Related Publication 20240304392A1 · Sep 12, 2024
References Cited (16)
US 6917513B1 · Kim et al. · 2005 [cited by applicant]
US 20070142209A1 · Ito · 2007 [cited by examiner]
US 20070203016A1 · Kojima · 2007 [cited by examiner]
US 20080004172A1 · Kojima · 2008 [cited by examiner]
US 20090264276A1 · Yamashita et al. · 2009 [cited by applicant]
US 20100014210A1 · Nakamura et al. · 2010 [cited by applicant]
US 20100067171A1 · Yamazaki · 2010 [cited by examiner]
US 20110019336A1 · Fukuda et al. · 2011 [cited by applicant]
US 20120050941A1 · Murakawa · 2012 [cited by examiner]
US 20130250478A1 · Kim et al. · 2013 [cited by applicant]
US 20140009864A1 · Takashima · 2014 [cited by examiner]
US 20220375688A1 · Yoon et al. · 2022 [cited by applicant]
JP 4525788B2 · 2010 [cited by applicant]
JP 2010232260A · 2010 [cited by applicant]
JP 2016117605A · 2016 [cited by applicant]
The Extended European Search Report dated Apr. 9, 2025 issued in European Patent Application No. 23207920.2. [cited by applicant]