Current-limiting control strategy for single-loop droop-controlled grid-forming inverters
This document describes systems and techniques for a current-limiting control strategy for single-loop droop-controlled grid-forming inverters. In aspects, a hysteresis module is configured to compare an output current detected across one or more transistors in an inverter controlled by the single-loop droop converter with a specified maximum current and to generate an overcurrent signal. The overcurrent signal presents a fault signal responsive to the output current exceeding the specified maximum current. A logic array is configured to logically combine gate control signals generated by the single-loop droop controller to selectively direct the one or more transistors to allow the output current to flow therethrough with the overcurrent signal to present modified gate control signals to the one or more transistors. The logic array is configured to replace one or more of the gate control signals in the modified gate control signals with a gate disable signal responsive to the overcurrent signal presenting the fault signal.
1. A current-limiting control system for a single-loop droop controller comprising:
a hysteresis module configured to compare an output current detected across one or more transistors in an inverter controlled by the single-loop droop converter with a specified maximum current and to generate an overcurrent signal, the overcurrent signal presenting a fault signal responsive to the output current exceeding the specified maximum current; and
a logic array configured to logically combine gate control signals generated by the single-loop droop controller to selectively direct the one or more transistors to allow the output current to flow therethrough with the overcurrent signal to present modified gate control signals to the one or more transistors, the logic array being configured to replace one or more of the gate control signals in the modified gate control signals with a gate disable signal responsive to the overcurrent signal presenting the fault signal.
2. The current-limiting control system of claim 1 , wherein the hysteresis module includes a plurality of comparators, each of the comparators being configured to compare one of a plurality of output currents detected at a plurality of output nodes of the inverter with the specified maximum current and to present the fault signal responsive to the one of the plurality of output currents exceeding the specified maximum current.
3. The current-limiting control system of claim 2 , wherein each of the plurality of comparators in the hysteresis module is coupled with a buffer configured to maintain an output of the comparator.
4. The current-limiting control system of claim 1 , wherein the one or more transistors includes a high-side transistor in a first branch of the inverter coupled between a positive side of a direct current bus and a first output node and a low-side transistor in a second branch of the inverter and coupled between a second output node and a negative side of the direct current bus, and wherein the output current is detected between the first output node and the second output node.
5. The current-limiting control system of claim 4 , wherein the logic array includes a plurality of logic elements configured to replace the gate control signals with the gate disable signal in the modified gate control signals presented to the high-side transistor and the low-side transistor to prevent the output current from flowing through the high-side transistor and low-side transistor when the fault signal is presented.
6. The current-limiting control system of claim 5 , wherein the plurality of logic elements includes a plurality of AND gates configured to replace one or more of the gate control signals with the gate disable signal in the modified gate control signals presented to the high-side transistor and the low-side transistor when the fault signal is presented to prevent the output current from flowing through the high-side transistor and the low-side transistor.
7. The current-limiting control system of claim 4 , wherein the inverter is configured to redirect the output current to the direct current bus responsive to the gate disable signal being applied to the one or more transistors.
8. The current-limiting control system of claim 7 , further comprising a plurality of diodes, each of the diodes being coupled between an emitter and a collector of each of the one or more transistors, wherein the output current is redirected through the diodes to the direct current bus.
9. The current-limiting control system of claim 1 , wherein the one or more transistors in an inverter include insulated-gate bipolar transistors.
10. A grid-forming inverter comprising:
an inverter including a plurality of transistors configured in a three-phase bridge;
a single-loop droop controller configured to monitor a plurality of output currents from the inverter and to generate a plurality of gate control signals applicable to the plurality of transistors to selectively direct the plurality of transistors to allow the output current to flow therethrough; and
a current-limiting control system including:
a hysteresis module configured to compare an output current detected across one or more transistors in an inverter controlled by the single-loop droop converter with a specified maximum current and to generate an overcurrent signal, the overcurrent signal presenting a fault signal responsive to the output current exceeding the specified maximum current; and
a logic array configured to logically combine the plurality of gate control signals with the overcurrent signal to present modified gate control signals to the one or more transistors, the logic array being configured to replace one or more of the gate control signals in the modified gate control signals with a gate disable signal responsive to the overcurrent signal presenting the fault signal to prevent the output current from flowing through the one or more transistors.
11. The grid-forming inverter of claim 10 , wherein the hysteresis module includes a plurality of comparators, each of the comparators being configured to compare one of a plurality of output currents detected at a plurality of output nodes of the inverter with the specified maximum current and to present the fault signal responsive to the one of the plurality of output currents exceeding the specified maximum current.
12. The grid-forming inverter of claim 10 , wherein the one or more transistors includes a high-side transistor in a first branch of the inverter coupled between a positive side of a direct current bus and a first output node and a low-side transistor in a second branch of the inverter and coupled between a second output node and a negative side of the direct current bus, and wherein the output current is detected between the first output node and the second output node.
13. The grid-forming inverter of claim 12 , wherein the logic array includes a plurality of logic elements configured to replace the gate control signals with the gate disable signal in the modified gate control signals presented to the high-side transistor and the low-side transistor to prevent the output current from flowing through the high-side transistor and low-side transistor when the fault signal is presented.
14. The grid-forming inverter of claim 13 , wherein the plurality of logic elements includes a plurality of AND gates configured to replace one or more of the gate control signals with the gate disable signal in the modified gate control signals presented to the high-side transistor and the low-side transistor when the fault signal is presented to prevent the output current from flowing through the high-side transistor and the low-side transistor.
15. The grid-forming inverter of claim 12 , wherein the inverter is configured, responsive to the gate disable signal being applied to the one or more transistors, to redirect the output current to the direct current bus.
16. The grid-forming inverter of claim 15 , further comprising a plurality of diodes, each of the diodes being coupled between an emitter and a collector of each of the one or more transistors wherein the output current is redirected through the diodes to the direct current bus.
17. The grid-forming inverter of claim 10 , wherein the one or more transistors in an inverter include insulated-gate bipolar transistors.
18. A method of limiting current across one or more transistors in a grid-forming inverter controlled by a single-loop droop controller comprising:
generating a plurality of gate control signals applicable to a plurality of transistors in the grid-forming inverter to cause the grid-forming inverter to generate a plurality of output currents combinable to form an alternating current;
comparing a specified maximum current with the plurality of output currents to generate an overcurrent signal, the overcurrent signal presenting a fault signal responsive to one of the plurality of output currents flowing through at least one of the transistors exceeding the specified maximum current;
replacing one or more of the gate control signals with a gate disable signal responsive to the fault signal being presented; and
applying the gate disable signal to the at least one of the transistors to prevent the output current from flowing through the at least one of the transistors.
19. The method of claim 18 , further comprising logically combining the overcurrent signal with the one or more gate control signals at a plurality of AND gates configured to replace one or more of the gate control signals with the gate disable signal responsive to the fault signal being presented by the overcurrent signal.
20. The method of claim 18 , further comprising preventing the output current from flowing through the at least one of the transistors by redirecting the output current to a direct current bus to which the plurality of transistors is coupled.