Automated voltage demarcation (VDM) adjustment for memory device
A memory system includes a memory device and a processing device coupled to the memory device. The processing device receives a plurality of codewords; determines that one or more codewords of the plurality of codewords are corrupt; selects a first read voltage associated with the one or more codewords, such that the first read voltage is based on a second read voltage utilized for reading the one or more codewords in a previous read operation; and applies the first read voltage to a set of memory cells storing the one or more corrupted codewords.
1. A system comprising:
a memory device;
a processing device, operatively coupled to the memory device, the processing device configured to:
receive a plurality of codewords;
determine that one or more codewords of the plurality of codewords are corrupt;
select a first read voltage associated with the one or more codewords, wherein the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords and a second read voltage utilized for reading the one or more codewords in a previous read operation; and
apply the first read voltage to a set of memory cells storing the one or more codewords.
2. The system of claim 1 , wherein the processing device is further configured to:
responsive to applying the first read voltage to the set of memory cells, perform an error correction operation on the one or more codewords.
3. The system of claim 1 , wherein the processing device is further configured to:
responsive to determining that a number of recovery operations performed with respect to the one or more codewords is below a threshold number, select a third read voltage exceeding the first read voltage; and
apply the third read voltage to the set of memory cells.
4. The system of claim 1 , wherein the processing device is further configured to:
responsive to determining that a number of recovery operations performed with respect to the one or more codewords is equal or exceeds a threshold number, determine a respective error status for each codeword of the one or more codewords.
5. The system of claim 1 , wherein determining that the one or more codewords are corrupt further comprises:
detecting one or more errors returned by an error correction operation performed with respect to the one or more codewords.
6. The system of claim 1 , wherein the first read voltage exceeds the second read voltage.
7. The system of claim 1 , wherein the processing device is further configured to:
responsive to determining that the first read voltage is below a maximum read voltage, select a third read voltage exceeding the first read voltage; and
apply the third read voltage to the set of memory cells.
8. A method, comprising:
receiving, by a processing device, a plurality of codewords;
determining that one or more codewords of the plurality of codewords are corrupt;
selecting a first read voltage associated with the one or more codewords, wherein the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords and a second read voltage utilized for reading the one or more codewords in a previous read operation; and
applying the first read voltage to a set of memory cells storing the one or more codewords.
9. The method of claim 8 , further comprising:
responsive to applying the first read voltage to the set of memory cells, performing an error correction operation on the one or more codewords.
10. The method of claim 8 , further comprising:
responsive to determining that a number of recovery operations performed with respect to the one or more codewords is below a threshold number, selecting a third read voltage exceeding the first read voltage; and
applying the third read voltage to the set of memory cells.
11. The method of claim 8 , further comprising:
responsive to determining that a number of recovery operations performed with respect to the one or more codewords is equal or exceeds a threshold number, determining a respective error status for each codeword of one or more codewords.
12. The method of claim 8 , wherein determining that the one or more codewords are corrupt further comprises:
detecting one or more errors returned by an error correction operation performed with respect to the one or more codewords.
13. The method of claim 8 , wherein the first read voltage exceeds the second read voltage.
14. The method of claim 8 , further comprising:
responsive to determining that the first read voltage is below a maximum read voltage, selecting a third read voltage exceeding the first read voltage; and
applying the third read voltage to the set of memory cells.
15. A non-transitory computer-readable storage medium comprising executable instructions, which when executed by a processing device, cause the processing device to:
receive a plurality of codewords;
determine that one or more codewords of the plurality of codewords are corrupt;
select a first read voltage associated with the one or more codewords, wherein the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords and a second read voltage utilized for reading the one or more codewords in a previous read operation; and
apply the first read voltage to a set of memory cells storing the one or more codewords.
16. The non-transitory computer-readable storage medium of claim 15 , further comprising executable instructions, which when executed by the processing device, cause the processing device to:
responsive to applying the first read voltage to the set of memory cells, perform an error correction operation on the one or more codewords.
17. The non-transitory computer-readable storage medium of claim 15 , further comprising executable instructions, which when executed by the processing device, cause the processing device to:
responsive to determining that a number of recovery operations performed with respect to the one or more codewords is below a threshold number, select a third read voltage exceeding the first read voltage; and
apply the third read voltage to the set of memory cells.
18. The non-transitory computer-readable storage medium of claim 15 , further comprising executable instructions, which when executed by the processing device, cause the processing device to:
responsive to determining that a number of recovery operations performed with respect to the one or more codewords is equal or exceeds a threshold number, determine a respective error status for each codeword of the one or more codewords.
19. The non-transitory computer-readable storage medium of claim 15 , wherein determining that the one or more codewords are corrupt further comprises:
detecting one or more errors returned by an error correction operation performed with respect to the one or more codewords.
20. The non-transitory computer-readable storage medium of claim 15 , further comprising executable instructions, which when executed by the processing device, cause the processing device to:
responsive to determining that the first read voltage is below a maximum read voltage, select a third read voltage exceeding the first read voltage; and
apply the third read voltage to the set of memory cells.