Substrate bonding method and substrate bonding system
View Patent ↗A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.
1. A substrate bonding method for bonding two substrates formed of an insulating material containing no metallic element, the method comprising:
an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, bringing the bonding surface into a state where a nitrogen oxide has been formed thereon;
a gas exposure step of, after the activation treatment step, by exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time less than 10 min during which the state does not disappear, replacing the nitrogen oxide by OH groups; and
a bonding step of bonding the two substrates that have the bonding surfaces on which the OH groups exist through the activation treatment step.
2. The substrate bonding method according to claim 1 , wherein, in the bonding step, the substrate bonding method bonds the two substrates while gas pressure is greater than 1 Pa and less than 10000 Pa.
3. The substrate bonding method according to claim 1 further comprising a transportation step of, during a period after the gas exposure step until the bonding step is performed, transporting the two substrates while maintaining gas pressure greater than 1 Pa and less than 10000 Pa.
4. The substrate bonding method according to claim 1 further comprising a cleaning step of cleaning the bonding surface of at least one of the two substrates, the one having the bonding surface hydrophilized, by spraying fluid containing water on the bonding surface.
5. The substrate bonding method according to claim 1 , wherein, at least one of at a point after the activation treatment step and before a transportation step of transporting the two substrates and in the transportation step, the substrate bonding method feeds water gas to the bonding surfaces of the two substrates.
6. The substrate bonding method according to claim 1 , wherein, in the activation treatment step, the substrate bonding method, after subjecting the bonding surfaces of the two substrates to reactive ion etching using nitrogen gas, subjects the bonding surfaces of the two substrates to radical treatment in which the bonding surfaces of the two substrates are irradiated with nitrogen radicals.
7. The substrate bonding method according to claim 6 , wherein, in the activation treatment step, the substrate bonding method, before subjecting the bonding surfaces of the two substrates to reactive ion etching using nitrogen gas, subjects the bonding surfaces of the two substrates to reactive ion etching using oxygen gas.
8. The substrate bonding method according to claim 1 , wherein, in the activation treatment step, the substrate bonding method, after subjecting the bonding surfaces of the two substrates to etching treatment in which the bonding surfaces of the two substrates are irradiated with a particle beam using nitrogen gas, subjects the bonding surfaces of the two substrates to radical treatment in which the bonding surfaces of the two substrates are irradiated with nitrogen radicals.
9. The substrate bonding method according to claim 6 , wherein, in the radical treatment, the substrate bonding method causes ions and radicals in plasma generated on one surface side in a thickness direction of a trap plate, the trap plate having at least one hole penetrating through the trap plate and being maintained at a ground potential, to pass through the hole of the trap plate and to be radiated to a bonding surface of at least one of the two substrates, the one being arranged on the other surface side in a thickness direction of the trap plate.
10. The substrate bonding method according to claim 6 , wherein
in the etching treatment, the substrate bonding method maintains a trap plate, the trap plate having at least one hole penetrating through the trap plate, in a floating state, generates plasma on one surface side in a thickness direction of the trap plate, and arranges at least one of the two substrates on the other surface side in a thickness direction of the trap plate, and
in the radical treatment, the substrate bonding method maintains the trap plate at a ground potential.
11. The substrate bonding method according to claim 8 , wherein, on a bonding surface of at least one of the two substrates, a metal portion and an insulating film are exposed.
12. The substrate bonding method according to claim 1 , wherein, on a bonding surface of at least one of the two substrates, an insulating film formed by depositing an oxide or a nitride is exposed.
13. A substrate bonding method for bonding two substrates formed of an insulating material containing no metallic element, the method comprising:
an activation treatment step of, by subjecting at least one of bonding surface to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, bringing the bonding surfaces into a state where a nitrogen oxide has been formed thereon;
a gas exposure step of, after the activation treatment step, by exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time during which the state does not disappear, replacing the nitrogen oxide by OH groups; and
a bonding step of bonding the two substrates that have the bonding surfaces on which the OH groups exist through the activation treatment step,
wherein, in the bonding step, the substrate bonding method bonds the two substrates while gas pressure is greater than 1 Pa and less than 10000 Pa.
14. A substrate bonding method for bonding two substrates formed of an insulating material containing no metallic element, the method comprising:
an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, bringing the bonding surface into a state where a nitrogen oxide has been formed thereon;
a gas exposure step of, after the activation treatment step, by exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time during which the state does not disappear, replacing the nitrogen oxide by OH groups; and
a bonding step of bonding the two substrates while OH groups exist on the bonding surfaces,
wherein, in the bonding step, the substrate bonding method bonds the two substrates under a gas pressure greater than a gas pressure in the activation treatment step.
15. A substrate bonding method for bonding two substrates formed of an insulating material containing no metallic element, the method comprising:
an activation treatment step of, by subjecting at least one of bonding surface to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, forming a nitrogen oxide on the bonding surfaces;
a gas exposure step of, after the activation treatment step, by exposing the bonding surfaces of the two substrates to gas containing water while maintaining a state where the nitrogen oxide is formed on the bonding surfaces, replacing the nitrogen oxide formed on the bonding surfaces by OH groups; and
a bonding step of bonding the two substrates while the OH groups exist on the bonding surfaces.