IP Library › Patent Application 18246595
Patent Application
App. No. 18/246,595

Semiconductor Light Receiving Element

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Quick Facts
Patent No.
US None
App. No.
18/246,595
Abstract

A structure for blocking light incidence to a peripheral part of an element is applied to a rear surface portion, and when optically coupled to a light receiving element, the light is made incident to a center part of the element without fail. An embodiment relates to a semiconductor light receiving element, including a semiconductor light-absorbing layer on a front surface of a semiconductor substrate, for receiving signal light from a rear surface of the semiconductor substrate, and a transmittance of an inner region of a similar shape having a same center as an operating region defined in the semiconductor light-absorbing layer on the rear surface of the semiconductor substrate is higher than that of an outside of the shape.

Claims (13)

1 . A semiconductor light-receiving element, including a semiconductor light absorbing layer on a front surface of a semiconductor substrate, for receiving a signal light from a rear surface of the semiconductor substrate,

wherein a transmittance of an inner region on the rear surface of the semiconductor substrate with a similar shape having a same center as an operating region defined in the semiconductor light absorbing layer is higher than a transmittance of an outside of the inner region.

2 . The semiconductor light-receiving element according to claim 1 , wherein

a light shielding film is formed on the outside of the inner region.

3 . The semiconductor light-receiving element according to claim 1 , wherein

an anti-reflection film with the similar shape having the same center as the operating region is formed.

4 . The semiconductor light-receiving element according to claim 1 , wherein

an anti-reflection film is formed on the rear surface of the semiconductor substrate, and

a ring-shaped light-shielding film is formed on a concentric circle having the same center as the operating region on the outside of the inner region.

5 . The semiconductor light-receiving element according to claim 3 , wherein

the anti-reflection film is formed of a dielectric multilayer film.

6 . The semiconductor light-receiving element according to claim 1 , wherein

the similar shape having the same center as that of the operating region is a circular shape or an elliptical shape.

Assignments (2)
CHANGE OF NAME Recorded Aug 18, 2025
From: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
To: NTT, INC.
Reel/Frame 072507/0679 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2023
From: NADA, MASAHIRO; NAKANISHI, YASUHIKO; TATSUMI, SHOKO
To: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
Reel/Frame 063094/0008 →