Film for temporary fixation, layered product for temporary fixation, and method for producing semiconductor device
A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270° C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25° C. after curing of the film for temporary fixing is 1.5 to 150 MPa.
1 . A film for temporary fixing comprising a curable resin component,
wherein the curable resin component comprises a thermoplastic resin and a thermosetting resin,
a storage modulus at 270° C. after curing is 1.5 to 5 MPa,
a storage modulus at 25° C. after curing is 10 to 90 MPa, and
the film for temporary fixing is used for temporarily fixing a semiconductor member and a support member.
2 . The film for temporary fixing according to claim 1 , wherein the thermoplastic resin comprises a hydrocarbon resin having a monomer unit derived from styrene.
3 . The film for temporary fixing according to claim 2 , wherein a content of the monomer unit derived from styrene is 10% to 22.5% by mass based on a total amount of the hydrocarbon resin.
4 . The film for temporary fixing according to claim 2 , wherein a content of the monomer unit derived from styrene is 7% to 16% by mass based on a total amount of the curable resin component.
5 . A laminated body for temporary fixing, comprising:
the support member;
a material layer for temporary fixing formed from the film for temporary fixing according to claim 1 ; and
a light absorbing layer located between the support member and the material layer.
6 . A method for producing a semiconductor device, the method comprising:
preparing the laminated body for temporary fixing according to claim 5 ;
temporarily fixing a semiconductor member to the support member, with the material layer for temporary fixing interposed therebetween;
processing the semiconductor member temporarily fixed to the support member; and
irradiating the laminated body for temporary fixing with light through a support member side to separate the semiconductor member from the support member.
7 . The method for producing a semiconductor device according to claim 6 , wherein the light is incoherent light.
8 . The method for producing a semiconductor device according to claim 7 , wherein the incoherent light is light comprising at least infrared light.
9 . The method for producing a semiconductor device according to claim 6 , wherein a light source of the light is a xenon lamp.
10 . The film for temporary fixing according to claim 2 , wherein the hydrocarbon resin is a styrene-ethylene-butylene-styrene block copolymer (SEBS).
11 . The film for temporary fixing according to claim 1 , wherein the thermosetting resin comprises an epoxy resin.
12 . The film for temporary fixing according to claim 11 , wherein the epoxy resin comprises a dicyclopentadiene type epoxy resin.
13 . The film for temporary fixing according to claim 1 , wherein a content of the thermoplastic resin is 40 to 90 parts by mass with respect to 100 parts by mass of a total amount of the curable resin component.
14 . The film for temporary fixing according to claim 1 , wherein a shear viscosity of the film at 100° C. is 3000 to 80000 Pa·s.
15 . The method for producing a semiconductor device according to claim 6 , wherein the thermoplastic resin comprises a hydrocarbon resin having a monomer unit derived from styrene.
16 . The method for producing a semiconductor device according to claim 15 , wherein the hydrocarbon resin is a styrene-ethylene-butylene-styrene block copolymer (SEBS).
17 . The method for producing a semiconductor device according to claim 6 , wherein the thermosetting resin comprises an epoxy resin.
18 . The method for producing a semiconductor device according to claim 17 , wherein the epoxy resin is a dicyclopentadiene type epoxy resin.
19 . The method for producing a semiconductor device according to claim 6 , wherein a content of the thermoplastic resin is 40 to 90 parts by mass with respect to 100 parts by mass of a total amount of the curable resin component.
20 . The method for producing a semiconductor device according to claim 6 , wherein a shear viscosity of the film for temporary fixing at 100° C. is 3000 to 80000 Pa·s.