SILICON-BASED PARTICLE WITH CORE-SHELL STRUCTURE, METHOD FOR PREPARING THE SAME, ANODE MATERIAL, ELECTRODE AND BATTERY
A silicon-based particle with a core-shell structure, a method for preparing the same, an anode material, an electrode and a battery. The silicon-based particle includes: a core comprising an oxygen-containing silicon-based compound matrix and nano-silicon grains, a molar ratio of oxygen to silicon in the core being 0.5-1.5; a silicon carbide layer covering the core; and a carbon layer covering the silicon carbide layer. The silicon-based particle is used in batteries, and has the characteristics of low expansion rate, long cycle life, high capacity and high coulombic efficiency.
1 - 22 . (canceled)
23 . A silicon-based particle with a core-shell structure, comprising:
a core comprising an oxygen-containing silicon-based compound matrix and nano-silicon grains, a molar ratio of oxygen to silicon in the core being 0.5-1.5;
a silicon carbide layer covering the core; and
a carbon layer covering the silicon carbide layer.
24 . The silicon-based particle of claim 23 , wherein the oxygen-containing silicon-based compound matrix is a lithium silicate compound matrix, and a molar ratio of lithium to silicon in the core is 0.1-2.
25 . The silicon-based particle of claim 23 , wherein the nano-silicon grains are uniformly dispersed in the oxygen-containing silicon-based compound matrix.
26 . The silicon-based particle of claim 23 , wherein a median size of the nano-silicon grains is 0.1-25 nm.
27 . The silicon-based particle of claim 23 , wherein a median size of the core is 0.05-20 μm.
28 . The silicon-based particle of claim 23 , wherein a particle size span of the core is ≤2.0.
29 . The silicon-based particle of claim 23 , wherein a thickness of the silicon carbide layer is 1-200 nm.
30 . The silicon-based particle of claim 23 , wherein a thickness of the carbon layer is 1-2000 nm.
31 . The silicon-based particle of claim 23 , wherein a mass proportion of the carbon layer in the silicon-based particle is 0.1-15 wt. %.
32 . The silicon-based particle of claim 23 , wherein a specific surface area of the silicon-based particle is 0.1-20 m 2 /g.
33 . The silicon-based particle of claim 31 , wherein a tap density of the silicon-based particle is ≥0.4 g/cm 3 .
34 . A method for preparing a silicon-based particle with a core-shell structure, comprising:
performing a surface treatment on SiOx particles;
performing carbon coating on the surface-treated SiOx particles to form a silicon carbide layer and a conductive carbon layer; and
performing sieving and removing magnetic impurities on the carbon-coated material.
35 . The method of claim 34 , further comprising:
performing a lithium doping treatment on the carbon-coated material.
36 . The method of claim 35 , wherein the lithium doping treatment is performed by at least one of an electrochemical method, a liquid-phase doping method, a thermal doping method, a high-temperature mixing method and a high-energy mechanical method.
37 . The method of claim 34 , wherein the surface treatment comprises gas-phase treatment or liquid-phase treatment.
38 . The method of claim 37 , wherein the gas-phase treatment comprises:
heating the SiOx particles in an oxygen-containing atmosphere for 10-600 mins at 300-1100° C.;
wherein the oxygen-containing atmosphere comprises one or more of oxygen, water vapor and air.
39 . The method of claim 37 , wherein the liquid-phase treatment comprises:
soaking the SiOx particles in water, a hydrogen peroxide solution or a nitric acid solution;
wherein a mass concentration of the hydrogen peroxide solution and a mass concentration of the nitric acid solution are ≤30 wt. %, and the liquid-phase treatment is performed at 0-100° C. for 10-600 mins.
40 . The method of claim 34 , wherein the carbon coating is performed by a chemical vapor deposition method or a heat treatment carbonization method;
wherein the heat treatment carbonization method comprises: mixing the surface-treated SiOx particles with a carbon precursor, and then performing a heat treatment for carbonization in a non-oxidizing atmosphere.
41 . The method of claim 40 , wherein the chemical vapor deposition method or the heat treatment carbonization method is performed at 800-1200° C. for 0.5-24 h.
42 . An anode material for a battery, comprising the silicon-based particle of claim 23 .