POWER SEMICONDUCTOR DEVICE
Provided is a compact and highly reliable power semiconductor device that prevents partial discharge originating from voids generated by the entering of water vapor from the exterior of the semiconductor device through a sealing resin or voids generated between a main terminal and the sealing resin when the main terminal is heated. The power semiconductor device comprises an insulating substrate, a semiconductor element provided on a front surface of the insulating substrate, and a gel-like first insulation material for sealing the semiconductor element. The power semiconductor device further includes a plate-shaped terminal for electrically connecting the semiconductor element and an external equipment, and an entire portion of the plate-shaped terminal surrounded by the first insulating material is covered with a second insulating material having a hardness greater than that of the first insulating material.
1 . A power semiconductor device which includes an insulating substrate, a semiconductor element provided on a front surface of the insulating substrate, and a gel-like first insulating material that seals the semiconductor element, the device comprising a plate-shaped terminal for electrically connecting the semiconductor element and external equipment, wherein an entire portion of the plate-shaped terminal surrounded by the first insulating material is covered with a second insulating material having a higher hardness than the first insulating material.
2 . The power semiconductor device according to claim 1 , wherein one end of the plate-shaped terminal is bonded to an electrode of the front surface of the insulating substrate.
3 . The power semiconductor device according to claim 1 , further comprising a case that houses the insulating substrate, the semiconductor element, and the first insulating material, wherein the plate-shaped terminal is provided in the case, and is electrically connected via a metal wire to an electrode of the front surface of the insulating substrate or an electrode of the semiconductor element.
4 . The power semiconductor device according to claim 1 , wherein a bonded portion between the semiconductor element and an electrode of the insulating substrate is covered with the second insulating material.
5 . The power semiconductor device according to claim 4 , wherein the semiconductor element and the electrode of the insulating substrate are bonded by a sintered metal.
6 . The power semiconductor device according to claim 1 , wherein the second insulating material is at least one of a polyamideimide resin, an epoxy resin, a fluororesin, an acrylic resin, and a silicone resin.
7 . The power semiconductor device according to claim 1 , wherein the second insulating material is a resin, and is in contact with the first insulating material.
8 . The power semiconductor device according to claim 7 , wherein the second insulating material is at least one of a polyamideimide resin, an epoxy resin, a fluororesin, an acrylic resin, and a silicone resin.