Substrate for epitaxially growing diamond crystal and method of manufacturing diamond crystal
Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle φ of more than 0°, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds or less; and a method of manufacturing a diamond crystal, including epitaxially growing a diamond crystal on the above surface made of the metal of the above substrate.
1 . A substrate for epitaxially growing a diamond crystal, which comprises
at least a surface made of a metal, and
a plurality of terraces connected in a stepped shape on the surface made of the metal, wherein the surface made of the metal is a plane having an off angle φ of more than 0°, and a full width at half maximum of an X-ray diffraction peak from a (002) plane by an X-ray rocking curve measurement at the surface made of a metal is 300 seconds or less.
2 . The substrate according to claim 1 , wherein the off angle φ is 3° or more and 18° or less.
3 . The substrate according to claim 1 , wherein the metal is a metal selected from the group consisting of group 8 elements, group 9 elements, and group 10 elements, and the surface made of the metal is a surface having the off angle φ in a <100> axis direction or a <110> axis direction with respect to a (100) plane.
4 . The substrate according to claim 1 , wherein the substrate has a metal layer on an underlying substrate, and the surface made of the metal is a surface of the metal layer.
5 . The substrate according to claim 4 , wherein the underlying substrate is a sapphire substrate, a Si substrate, a SrTiO 3 substrate, or a YSZ substrate.
6 . The substrate according to claim 4 , wherein a surface of the underlying substrate having the metal layer is a plane having an off angle θ of more than 0°.
7 . The substrate according to claim 4 , wherein the underlying substrate is a sapphire substrate, and a surface of the sapphire substrate having the metal layer is:
a plane having an off angle θ of more than 0° in an m axis or c axis direction with respect to an A plane,
a plane having an off angle θ of more than 0° in a [−1101] axis or a axis direction with respect to an R plane, or
a plane having an off angle θ of more than 0° in an a axis or c axis direction with respect to an M plane.
8 . The substrate according to claim 6 , wherein the off angle θ is 3° or more and 20° or less.
9 . The substrate according to claim 6 , wherein φ=(0.89 to 0.9)×θ+T (T: φ value for θ=0° or tolerance angle value at the time of setting θ=0°) holds with respect to the off angle θ.
10 . A method of manufacturing a diamond crystal, which comprises epitaxially growing a diamond crystal on the surface made of the metal of the substrate according to claim 1 .
11 . A method of manufacturing a diamond crystal according to claim 10 , wherein the substrate comprises a plurality of steps and terraces on the surface made of the metal, and the method comprises epitaxially growing the diamond crystal in a plane direction of the terrace with the step as a starting site of epitaxial growth of a crystal lattice array.
12 . The substrate according to claim 2 , wherein the metal is a metal selected from the group consisting of group 8 elements, group 9 elements, and group 10 elements, and
the surface made of the metal is a surface having the off angle φ in a <100> axis direction or a <110> axis direction with respect to a (100) plane.
13 . The substrate according to claim 2 , wherein the substrate has a metal layer on an underlying substrate, and the surface made of the metal is a surface of the metal layer.
14 . The substrate according to claim 12 , wherein the substrate has a metal layer on an underlying substrate, and the surface made of the metal is a surface of the metal layer.
15 . The substrate according to claim 13 , wherein the underlying substrate is a sapphire substrate, a Si substrate, a SrTiO 3 substrate, or a YSZ substrate.
16 . The substrate according to claim 14 , wherein the underlying substrate is a sapphire substrate, a Si substrate, a SrTiO 3 substrate, or a YSZ substrate.
17 . The substrate according to claim 5 , wherein a surface of the underlying substrate having the metal layer is a plane having an off angle θ of more than 0°.
18 . The substrate according to claim 13 , wherein a surface of the underlying substrate having the metal layer is a plane having an off angle θ of more than 0°.
19 . The substrate according to claim 14 , wherein a surface of the underlying substrate having the metal layer is a plane having an off angle θ of more than 0°.