REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
There is provided a reflective photomask blank capable of suppressing or reducing the shadowing effect of a reflective photomask for patterning transfer using a light having a wavelength in the extreme ultraviolet region as a light source and sufficiently having heat resistance in exposure. The reflective photomask blank is configured to have a substrate 1 , a reflective layer 2 including a multi-layer film formed on the substrate 1 , and an absorption layer 4 formed on the reflective layer 2 . The absorption layer 4 contains a total of 50 at % or more of indium (In) and nitrogen (N). The atomic number ratio (N/In) of nitrogen (N) to indium (In) in the absorption layer 4 is set to 0.5 or more and 1.5 or less. The layer thickness of the absorption layer 4 is set to 17 nm or more and 45 nm or less.
1 . A reflective photomask blank for producing a reflective photomask for pattern transfer using an extreme ultraviolet light as a light source comprising:
a substrate;
a reflective layer including a multi-layer film formed on the substrate; and
an absorption layer formed on the reflective layer, wherein
the absorption layer contains a total of 50 at % or more of indium (In) and nitrogen (N),
an atomic number ratio (N/In) of nitrogen (N) to indium (In) in the absorption layer is 0.5 or more and 1.5 or less, and
a layer thickness of the absorption layer is 17 nm or more and 45 nm or less.
2 . The reflective photomask blank according to claim 1 , wherein the absorption layer further contains one or more elements selected from the group consisting of tantalum (Ta), platinum (Pt), tellurium (Te), zirconium (Zr), hafnium (Hf), titanium (Ti), tungsten (W), silicon (Si), chromium (Cr), gallium (Ga), molybdenum (Mo), tin (Sn), palladium (Pd), nickel (Ni), boron (B), fluorine (F), oxygen (O), carbon (C), and hydrogen (H).
3 . The reflective photomask blank according to claim 1 , comprising:
a capping layer between the reflective layer and the absorption layer.
4 . A reflective photomask for pattern transfer using an extreme ultraviolet light as a light source comprising:
a substrate;
a reflective layer including a multi-layer film formed on the substrate; and
an absorption pattern layer formed on the reflective layer, wherein
the absorption pattern layer contains a total of 50 at % or more of indium (In) and nitrogen (N),
an atomic number ratio (N/In) of nitrogen (N) to indium (In) in the absorption layer is 0.5 or more and 1.5 or less, and
a layer thickness of the absorption pattern layer is 17 nm or more and 45 nm or less.
5 . The reflective photomask according to claim 4 , wherein the absorption pattern layer further contains one or more elements selected from the group consisting of tantalum (Ta), platinum (Pt), tellurium (Te), zirconium (Zr), hafnium (Hf), titanium (Ti), tungsten (W), silicon (Si), chromium (Cr), gallium (Ga), molybdenum (Mo), tin (Sn), palladium (Pd), nickel (Ni), boron (B), fluorine (F), oxygen (O), carbon (C), and hydrogen (H).
6 . The reflective photomask blank according to claim 2 , comprising:
a capping layer between the reflective layer and the absorption layer.