Absorber and method of forming the same
An absorber and a method of forming an absorber. The absorber may include a semiconductor absorption structure doped with dopants of a first conductivity type. The absorber may also include a semiconductor substrate doped with dopants of a second conductivity type different from the first conductivity type. The absorber may further include a dielectric layer between the semiconductor absorption structure and the semiconductor substrate. The absorber may additionally include a buried semiconductor structure included in a cavity of the dielectric layer, the buried semiconductor structure doped with dopants of the first conductivity type.
1 . An absorber comprising:
a semiconductor absorption structure doped with dopants of a first conductivity type;
a semiconductor substrate doped with dopants of a second conductivity type different from the first conductivity type;
a dielectric layer between the semiconductor absorption structure and the semiconductor substrate; and
a buried semiconductor structure comprised in a cavity of the dielectric layer, the buried semiconductor structure doped with dopants of the first conductivity type.
2 . The absorber according to claim 1 , wherein the buried semiconductor structure extends from the semiconductor absorption structure.
3 . The absorber according to claim 1 , wherein the first conductivity type is n-type and the second conductivity type is p-type.
4 . The absorber according to claim 1 , wherein the semiconductor absorption structure, the semiconductor substrate, and the buried semiconductor structure comprise silicon; and wherein the dielectric layer comprises silicon oxide.
5 . The absorber according to claim 1 , wherein the semiconductor absorption structure is a cuboid.
6 . The absorber according to claim 1 , wherein the buried semiconductor structure is a cylinder having a circular surface at one end.
7 . The absorber according to claim 6 , wherein the circular surface has a radius selected from a range from 0.7 μm to 1.2 μm.
8 . The absorber according to claim 6 , wherein a thickness of the cylinder is selected from a range from 0.6 μm to 0.8 μm.
9 . The absorber according to claim 1 , wherein the semiconductor absorption structure is patterned.
10 . The absorber according to claim 1 , wherein the semiconductor absorption structure has a doping concentration selected from a range from 10 19 cm −3 to 5×10 19 cm −3 .
11 . A method of forming an absorber, the method comprising:
forming a semiconductor absorption structure doped with dopants of a first conductivity type;
forming a semiconductor substrate doped with dopants of a second conductivity type different from the first conductivity type;
forming a dielectric layer between the semiconductor absorption structure and the semiconductor substrate; and
forming a buried semiconductor structure comprised in a cavity of the dielectric layer, the buried semiconductor structure doped with dopants of the first conductivity type.
12 . The method according to claim 11 , wherein the buried semiconductor structure extends from the semiconductor absorption structure.
13 . The method according to claim 11 , wherein the first conductivity type is n-type and the second conductivity type is p-type.
14 . The method according to claim 11 , wherein the semiconductor absorption structure, the semiconductor substrate, and the buried semiconductor structure comprise silicon; and wherein the dielectric layer comprises silicon oxide.
15 . The method according to claim 11 , wherein the semiconductor absorption structure is a cuboid.
16 . The method according to claim 11 , wherein the buried semiconductor structure is a cylinder having a circular surface at one end.
17 . The method according to claim 16 , wherein the circular surface has a radius selected from a range from 0.7 μm to 1.2 μm.
18 . The method according to claim 16 , wherein a thickness of the cylinder is selected from a range from 0.6 μm to 0.8 μm.
19 . The method according to claim 11 , wherein the semiconductor absorption structure is patterned.
20 . The method according to claim 11 , wherein the semiconductor absorption structure has a doping concentration selected from a range from 10 19 cm −3 to 5×10 19 cm −3 .