PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK
Provided are a phase shift mask blank that suppresses the formation of haze on a phase shift film surface and reduces film peeling during cleaning or a level difference in a cross-section of a modified portion during modification etching to improve transfer performance, a phase shift mask, and a method for manufacturing a phase shift mask. A phase shift mask blank ( 10 ) according to an embodiment of the present invention is a phase shift mask blank used for producing a phase shift mask to which exposure light having a wavelength of 200 nm or less is applied, the phase shift mask blank ( 10 ) including a transparent substrate ( 11 ) and a phase shift film ( 12 ), in which the phase shift film ( 12 ) includes a phase difference and transmittance adjustment layer ( 13 ), a protective layer against gas permeation ( 15 ), and a compositionally graded layer ( 14 ), and in the compositionally graded layer ( 14 ), a content of a component configuring the phase difference and transmittance adjustment layer ( 13 ) decreases from the substrate side ( 11 ) toward the protective layer against gas permeation ( 15 ) side, and a content of a component configuring the protective layer against gas permeation ( 15 ) increases from the substrate ( 11 ) side toward the protective layer against gas permeation ( 15 ) side.
1 . A phase shift mask blank used for producing a phase shift mask to which exposure light having a wavelength of 200 nm or less is applied, the phase shift mask blank comprising:
a transparent substrate; and
a phase shift film formed on the transparent substrate,
wherein the phase shift film includes a phase difference and transmittance adjustment layer that is capable of adjusting a predetermined amount of each of a phase and a transmittance with respect to exposure light to be transmitted, a protective layer against gas permeation formed on the phase difference and transmittance adjustment layer and configured to prevent gas permeation to the phase difference and transmittance adjustment layer, and a compositionally graded layer that is positioned between the phase difference and transmittance adjustment layer and the protective layer against gas permeation and is a region where a ratio between a content of a component configuring the phase difference and transmittance adjustment layer and a content of a component configuring the protective layer against gas permeation continuously changes in a film thickness direction, and
in the compositionally graded layer, the content of the component configuring the phase difference and transmittance adjustment layer decreases from the substrate side toward the protective layer against gas permeation side, and the content of the component configuring the protective layer against gas permeation increases from the substrate side toward the protective layer against gas permeation side.
2 . The phase shift mask blank according to claim 1 ,
wherein the phase difference and transmittance adjustment layer is positioned on the transparent substrate side, and
when a film thickness of the phase difference and transmittance adjustment layer is set to d 1 , a film thickness of the compositionally graded layer is set to d 2 , and a film thickness of the protective layer against gas permeation is set to d 3 , a total film thickness of d 1 and d 2 is more than d 3 and d 3 is 15 nm or less.
3 . The phase shift mask blank according to claim 1 ,
wherein the phase shift film has resistance to oxygen-containing chlorine-based etching (Cl/O-based) and is etchable by fluorine-based etching (F-based).
4 . The phase shift mask blank according to claim 1 ,
wherein the phase difference and transmittance adjustment layer contains silicon and contains at least one selected from transition metal, nitrogen, oxygen, and carbon, and
the transition metal is at least one selected from molybdenum, titanium, vanadium, cobalt, nickel, zirconium, niobium, and hafnium.
5 . The phase shift mask blank according to claim 1 ,
wherein the protective layer against gas permeation contains at least one selected from tantalum metal, a tantalum compound, tungsten metal, a tungsten compound, tellurium metal, a tellurium compound, silicon metal, and a silicon compound.
6 . The phase shift mask blank according to claim 5 ,
wherein the tantalum compound contains tantalum and at least one selected from oxygen, nitrogen, and carbon.
7 . The phase shift mask blank according to claim 5 ,
wherein the tungsten compound contains tungsten and at least one selected from oxygen, nitrogen, and carbon.
8 . The phase shift mask blank according to claim 5 ,
wherein the tellurium compound contains tellurium and at least one selected from oxygen, nitrogen, and carbon.
9 . The phase shift mask blank according to claim 5 ,
wherein the silicon compound contains silicon and at least one selected from oxygen, nitrogen, and carbon.
10 . A phase shift mask having a circuit pattern to which exposure light having a wavelength of 200 nm or less is applied, the phase shift mask comprising:
a transparent substrate; and
a phase shift film formed on the transparent substrate,
wherein the phase shift film includes a phase difference and transmittance adjustment layer that is capable of adjusting a predetermined amount of each of a phase and a transmittance with respect to exposure light to be transmitted, a protective layer against gas permeation formed on the phase difference and transmittance adjustment layer and configured to prevent gas permeation to the phase difference and transmittance adjustment layer, and a compositionally graded layer that is positioned between the phase difference and transmittance adjustment layer and the protective layer against gas permeation and is a region where a ratio between a content of a component configuring the phase difference and transmittance adjustment layer and a content of a component configuring the protective layer against gas permeation continuously changes in a film thickness direction, and
in the compositionally graded layer, the content of the component configuring the phase difference and transmittance adjustment layer decreases from the substrate side toward the protective layer against gas permeation side, and the content of the component configuring the protective layer against gas permeation increases from the substrate side toward the protective layer against gas permeation side.
11 . The phase shift mask according to claim 10 ,
wherein the phase difference and transmittance adjustment layer is positioned on the transparent substrate side, and
when a film thickness of the phase difference and transmittance adjustment layer is set to d 1 , a film thickness of the compositionally graded layer is set to d 2 , and a film thickness of the protective layer against gas permeation is set to d 3 , a total film thickness of d 1 and d 2 is more than d 3 and d 3 is 15 nm or less.
12 . The phase shift mask according to claim 10 or 11 ,
wherein the phase shift film has resistance to oxygen-containing chlorine-based etching (Cl/O-based) and is etchable by fluorine-based etching (F-based).
13 . The phase shift mask according to claim 10 ,
wherein the phase difference and transmittance adjustment layer contains silicon and contains at least one selected from transition metal, nitrogen, oxygen, and carbon, and
the transition metal is at least one selected from molybdenum, titanium, vanadium, cobalt, nickel, zirconium, niobium, and hafnium.
14 . The phase shift mask according to claim 10 ,
wherein the protective layer against gas permeation contains at least one selected from tantalum metal, a tantalum compound, tungsten metal, a tungsten compound, tellurium metal, a tellurium compound, silicon metal, and a silicon compound.
15 . The phase shift mask according to claim 14 ,
wherein the tantalum compound contains tantalum and at least one selected from oxygen, nitrogen, and carbon.
16 . The phase shift mask according to claim 14 ,
wherein the tungsten compound contains tungsten and at least one selected from oxygen, nitrogen, and carbon.
17 . The phase shift mask according to claim 14 ,
wherein the tellurium compound contains tellurium and at least one selected from oxygen, nitrogen, and carbon.
18 . The phase shift mask according to claim 14 ,
wherein the silicon compound contains silicon and at least one selected from oxygen, nitrogen, and carbon.
19 . A method for manufacturing a phase shift mask using the phase shift mask blank according to claim 1 , the method comprising:
forming a light shielding film on the phase shift film;
forming a resist pattern on the light shielding film;
forming a pattern on the light shielding film by oxygen-containing chlorine-based etching (Cl/O-based) after forming the resist pattern;
forming a pattern on the phase shift film by fluorine-based etching (F-based) after forming the pattern on the light shielding film;
removing the resist pattern after forming the pattern on the phase shift film; and
removing the light shielding film by oxygen-containing chlorine-based etching (Cl/O-based) from the phase shift film after removing the resist pattern.
20 . The phase shift mask blank according to claim 2 ,
wherein the phase shift film has resistance to oxygen-containing chlorine-based etching (CVO-based) and is etchable by fluorine-based etching (F-based).