Composition for semiconductor processing and polishing method of semiconductor device using the same
A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azole-based compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.
1. A composition for semiconductor processing, comprising:
abrasive particles surface-modified with an amino silane-based compound;
a copper erosion inhibitor, including an azole-based compound;
a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and
a surfactant, including fluorine in a molecule thereof,
wherein a surface of the surface-modified abrasive particles comprises an amino silane group.
2. The composition of claim 1 , wherein the azole-based compound and the copper surface protectant are included in the composition in a weight ratio of 1:0.2 to 4.
3. The composition of claim 1 , wherein the azole-based compound and the surfactant are included in the composition in a weight ratio of 1:0.001 to 0.2.
4. The composition of claim 1 , wherein the azole-based compound is included in the composition at 0.02 to 2 parts by weight based on 100 parts by weight of the abrasive particles.
5. The composition of claim 1 , wherein the amino silane-based compound and the azole-based compound are included in the composition in a weight ratio of 1:0.1 to 0.28.
6. The composition of claim 1 , wherein the composition comprises a range between 1% to 17% by weight of the abrasive particles.
7. The composition of claim 1 , wherein the composition is a slurry for polishing a surface comprising copper, silicon nitride, and silicon oxide.
8. The composition of claim 7 , wherein a surface of a circular via with a diameter of 5 μm, polished with the composition, has a maximum roughness of 220 nm or less as measured by atomic-force microscopy (AFM).
9. A composition for semiconductor processing, comprising:
abrasive particles surface-modified with an amino silane-based compound;
a copper erosion inhibitor, including an azole-based compound;
a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and
a surfactant, including fluorine in a molecule thereof,
wherein a copper corrosion inhibition index (Er) for the composition according to Equation 1 below is 8 to 15;
Er
=
indexC
×
Cab
Ps
,
[
Equation
1
]
where indexC is a value according to Equation 2 below, Cab is a content (wt %) of the abrasive particles contained in an entire composition for the semiconductor processing, and Ps is a content (parts by weight) of the amino silane-based compound applied to 100 parts by weight of the abrasive particles,
Index C=C 1×6+ C 2×5− C 3− C 4×10 [Equation 2]
where C1 is a content (parts by weight) of the amino silane-based compound applied to the abrasive particles contained in a total of 100 parts by weight of the composition, C2 is a content (parts by weight) of the azole-based compound contained in a total of 100 parts by weight of the composition, C3 is a content (parts by weight) of the copper surface protectant contained in a total of 100 parts by weight of the composition, and C4 is a content of the surfactant contained in a total of 100 parts by weight of the composition.
10. The composition of claim 9 , further comprising a silicon nitride polishing enhancer,
wherein the indexC is a value according to Equation 2-1 below;
Index C=C 1×6+ C 2×5− C 3− C 4×10− C 5×2, [Equation 2-1]
where C1 is a content (parts by weight) of the amino silane-based compound applied to the abrasive particles contained in a total of 100 parts by weight of the composition, C2 is a content (parts by weight) of the azole-based compound contained in a total of 100 parts by weight of the composition, C3 is a content (parts by weight) of the copper surface protectant contained in a total of 100 parts by weight of the composition, C4 is a content of the surfactant contained in a total of 100 parts by weight of the composition, and C5 is a content of the silicon nitride polishing enhancer contained in a total of 100 parts by weight of the composition.
11. The composition of claim 9 , wherein a surface area difference between an actual surface area and a projected surface area of a circular copper via, having a diameter of 5 μm, polished with the composition is less than 2.5% as measured by AFM.
12. The composition of claim 9 , wherein the composition is used to polish a substrate by rotating either one or both of a platen on which a polishing pad is mounted and a carrier accommodating the substrate to planarize a surface of the substrate.
13. A method of polishing a substrate, comprising:
polishing a substrate by rotating either one or both of a platen on which a polishing pad is mounted and a carrier accommodating a substrate to planarize a surface of the substrate,
wherein the polishing is performed with a composition comprising:
abrasive particles surface-modified with an amino silane-based compound;
a copper erosion inhibitor, including an azole-based compound;
a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and
a surfactant, including fluorine in a molecule thereof,
wherein a surface of the surface-modified abrasive particles comprises an amino silane group, and
the surface of the substrate includes each of copper, silicon nitride, and silicon oxide.
14. The method of claim 13 , wherein an absolute value of skewness of a circular copper via having a diameter of 5 μm on the surface of the substrate subjected to the polishing is 1 or less as measured by surface atomic-force microscopy (AFM).
15. The method of claim 13 , wherein a SiO/SiN selectivity, a ratio of a silicon oxide polishing rate to a silicon nitride polishing rate, is 3 or more.
16. The method of claim 13 , wherein a SiO/Cu selectivity, a ratio of a silicon oxide polishing rate to a copper polishing rate, is 0.9 or more.