Chalcogenide material and semiconductor device including the same
Disclosed is a chalcogenide material including germanium (Ge), selenium (Se), arsenic (As), silicon (Si) and indium (In). In the chalcogenide material, a content of selenium (Se) is 49 at % to 56 at %, a content of indium (In) is 1.1 at % or less, and a sum of contents of germanium (Ge) and silicon (Si) is 18 at % to 21 at %.
1 . A chalcogenide material comprising germanium (Ge), selenium (Se), arsenic (As), silicon (Si), and indium (In),
wherein, in the chalcogenide material, a content of selenium (Se) is 49 at % to 56 at %, a content of indium (In) is 1.1 at % or less, and a sum of contents of germanium (Ge) and silicon (Si) is 18 at % to 21 at %, and
wherein a mean coordination number of the chalcogenide material is 2.60 to 2.68.
2 . The chalcogenide material of claim 1 , wherein a mean coordination number of the chalcogenide material is 2.64 to 2.68.
3 . The chalcogenide material of claim 1 , wherein the content of indium (In) is 0.45 at % to 1.1 at %.
4 . A semiconductor device comprising:
a first electrode;
a second electrode; and
a first variable resistance layer positioned between the first electrode and the second electrode, and including a chalcogenide material,
wherein the chalcogenide material includes germanium (Ge), selenium (Se), arsenic (As), silicon (Si), and indium (In), and has a mean coordination number of 2.60 to 2.68.
5 . The semiconductor device of claim 4 , wherein a content of selenium (Se) in the chalcogenide material is 49 at % to 56 at %.
6 . The semiconductor device of claim 4 , wherein a content of indium (In) in the chalcogenide material is 1.1 at % or less.
7 . The semiconductor device of claim 4 , wherein a content of indium (In) in the chalcogenide material is 3.38 at % or less.
8 . The semiconductor device of claim 7 , wherein the mean coordination number of the chalcogenide material is 2.64 to 2.68.
9 . The semiconductor device of claim 4 , wherein a sum of contents of germanium (Ge) and silicon (Si) in the chalcogenide material is 18 at % to 21 at %.
10 . The semiconductor device of claim 4 , wherein the first variable resistance layer maintains an amorphous state during an operation of the semiconductor device.
11 . The semiconductor device of claim 4 , further comprising:
a third electrode; and
a second variable resistance layer positioned between the second electrode and the third electrode.
12 . The semiconductor device of claim 11 , wherein the first variable resistance layer is a switching layer, and the second variable resistance layer is a memory layer.
13 . The semiconductor device of claim 4 , further comprising:
a word line; and
a bit line intersecting the word line,
wherein a memory cell is connected between the word line and the bit line, and includes the first electrode, the second electrode, and the first variable resistance layer.
14 . A chalcogenide material comprising germanium (Ge), selenium (Se), arsenic (As), silicon (Si), and indium (In),
wherein a mean coordination number of the chalcogenide material is 2.60 to 2.68.
15 . The chalcogenide material of claim 14 , wherein a content of selenium (Se) in the chalcogenide material is 49 at % to 56 at %.
16 . The chalcogenide material of claim 14 , wherein a content of indium (In) in the chalcogenide material is 1.1 at % or less.
17 . The chalcogenide material of claim 14 , wherein a content of indium (In) in the chalcogenide material is 3.38 at % or less.
18 . The chalcogenide material of claim 17 , wherein the mean coordination number of the chalcogenide material is 2.64 to 2.68.
19 . The chalcogenide material of claim 14 , wherein a sum of contents of germanium (Ge) and silicon (Si) in the chalcogenide material is 18 at % to 21 at %.