IP Library › Granted Patent US 12,002,769
Granted Patent B2
US 12,002,769 · App. 18/300,256 · Granted Jun 4, 2024

Switch with electrostatic discharge (ESD) protection

Inventors: Muhammad Hassan (San Diego, CA); Bhushan Shanti Asuri (San Diego, CA); Jeremy Darren Dunworth (La Jolla, CA); Ravi Sridhara (San Diego, CA)
Assignee: QUALCOMM Incorporated
H01L23/60H03F3/195H03F3/245H03F2200/318H03F2200/441H03F2200/451H03F2200/541
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Quick Facts
Patent No.
US 12,002,769
App. No.
18/300,256
Granted
Jun 4, 2024
Kind
B2
Abstract

In certain aspects, a chip includes a pad, and a power amplifier having a first output and a second output. The chip also includes a transformer, wherein the transformer includes a first inductor coupled between a first terminal and a second terminal of the transformer, wherein the first terminal is coupled to the first output of the power amplifier, and the second terminal is coupled to the second output of the power amplifier. The transformer also includes a second inductor coupled between a third terminal and a fourth terminal of the transformer, wherein the third terminal is coupled to the pad. The chip also includes a first switch coupled to the fourth terminal, a shunt inductor coupled in parallel with the first switch, and a low-noise amplifier coupled to the third terminal.

Claims (61)

1. A chip, comprising:

a pad;

a power amplifier having a first output and a second output;

a transformer, wherein the transformer comprises:

a first inductor coupled between a first terminal and a second terminal of the transformer, wherein the first terminal is coupled to the first output of the power amplifier, and the second terminal is coupled to the second output of the power amplifier; and

a second inductor coupled between a third terminal and a fourth terminal of the transformer, wherein the third terminal is coupled to the pad;

a first switch coupled to the fourth terminal;

a shunt inductor coupled in parallel with the first switch; and

a low-noise amplifier coupled to the third terminal, wherein the second inductor is coupled between the first switch and an input of the low-noise amplifier.

2. The chip of claim 1 , wherein the first switch comprises a transistor.

3. The chip of claim 2 , wherein a drain of the transistor is coupled to the fourth terminal of the transformer, and a source of the transistor is coupled to a ground.

4. The chip of claim 3 , further comprising a controller coupled to a gate of the transistor, wherein the controller is configured to turn on the transistor in a transmit mode and turn off the transistor in a receive mode.

5. The chip of claim 4 , further comprising a second switch coupled between the input of the low-noise amplifier and the ground, wherein the controller is configured to turn on the second switch in the transmit mode and turn off the second switch in the receive mode.

6. The chip of claim 1 , wherein the first switch is coupled between the fourth terminal of the transformer and a ground.

7. The chip of claim 6 , further comprising a controller, wherein the controller is configured to turn on the first switch in a transmit mode and turn off the first switch in a receive mode.

8. A chip, comprising:

a pad;

a power amplifier having a first output and a second output;

a transformer, wherein the transformer comprises:

a first inductor coupled between a first terminal and a second terminal of the transformer, wherein the first terminal is coupled to the first output of the power amplifier, and the second terminal is coupled to the second output of the power amplifier; and

a second inductor coupled between a third terminal and a fourth terminal of the transformer, wherein the third terminal is coupled to the pad;

a first switch coupled between the fourth terminal and a ground;

a shunt inductor coupled in parallel with the first switch;

a low-noise amplifier coupled to the third terminal;

a second switch coupled between an input of the low-noise amplifier and the ground; and

a controller, wherein the controller is configured to turn on the first switch in a transmit mode, turn on the second switch in the transmit mode, turn off the first switch in a receive mode, and turn off the second switch in the receive mode.

9. The chip of claim 1 , wherein the shunt inductor is coupled between the fourth terminal of the transformer and a ground.

10. The chip of claim 1 , further comprising an impedance matching circuit coupled between the pad and an input of the low-noise amplifier.

11. An apparatus, comprising:

a chip, comprising:

a pad;

a power amplifier;

a transformer coupled between the power amplifier and the pad, wherein the transformer comprises:

a first inductor coupled between a first output and a second output of the power amplifier; and

a second inductor coupled to the pad;

a first switch coupled between the transformer and a ground;

a low-noise amplifier coupled to the pad; and

a second switch coupled between an input of the low-noise amplifier and the ground, wherein the second inductor is coupled between the first switch and the second switch.

12. The apparatus of claim 11 , further comprising a shunt inductor coupled in parallel with the first switch.

13. The apparatus of claim 11 , wherein the first switch comprises a transistor.

14. The apparatus of claim 13 , wherein a drain of the transistor is coupled to the transformer, and a source of the transistor is coupled to the ground.

15. The apparatus of claim 14 , further comprising a controller coupled to a gate of the transistor, wherein the controller is configured to turn on the transistor in a transmit mode and turn off the transistor in a receive mode.

16. An apparatus, comprising:

a chip, comprising:

a pad;

a power amplifier;

a transformer coupled between an output of the power amplifier and the pad;

a first switch coupled between the transformer and a ground, the first switch comprising a transistor, wherein a drain of the transistor is coupled to the transformer, and a source of the transistor is coupled to the ground;

a low-noise amplifier coupled to the pad;

a second switch coupled between an input of the low-noise amplifier and the ground; and

a controller coupled to a gate of the transistor, wherein the controller is configured to turn on the transistor in a transmit mode, turn on the second switch in the transmit mode, turn off the transistor in a receive mode, and turn off the second switch in the receive mode.

17. The apparatus of claim 13 , further comprising a shunt inductor coupled in parallel with the transistor.

18. The apparatus of claim 16 , wherein:

the power amplifier has a first output and a second output;

the transformer includes a first inductor coupled between the first output and the second output; and

the transformer includes a second inductor coupled between the pad and the first switch.

19. The apparatus of claim 18 , further comprising a shunt inductor coupled in parallel with the first switch.

20. The apparatus of claim 11 , further comprising an impedance matching circuit coupled between the pad and the input of the low-noise amplifier.

21. The apparatus of claim 11 , further comprising an antenna coupled to the pad.

22. The chip of claim 3 , wherein the second inductor is coupled between the drain of the transistor and the input of the low-noise amplifier.

23. The apparatus of claim 15 , wherein the controller is configured to turn on the second switch in the transmit mode and turn off the second switch in the receive mode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2023
From: HASSAN, MUHAMMAD; ASURI, BHUSHAN SHANTI; DUNWORTH, JEREMY DARREN; SRIDHARA, RAVI
To: QUALCOMM INCORPORATED
Reel/Frame 063319/0902 →
Continuity (2)
Continuation 17118253 · Dec 10, 2020
Related Publication 20230253346A1 · Aug 10, 2023