IP Library › Granted Patent US 12,572,047
Granted Patent B2
US 12,572,047 · App. 18/303,815 · Granted Mar 10, 2026

Fabrication of electrochromic devices

Inventors: Robert Tad Rozbicki (Saratoga, CA); Sridhar Karthik Kailasam (Fremont, CA); Robin Sean Friedman (Redwood City, CA); Dane Thomas Gillaspie (Fremont, CA); Anshu Ajit Pradhan (Collierville, TN); Disha Mehtani (Los Altos, CA)
Assignee: View Operating Corporation
G02F1/15C23C14/028C23C14/06C23C14/0635C23C14/0641C23C14/0652C23C14/0676C23C14/08C23C14/081C23C14/083C23C14/086C23C14/34G02F1/1309G02F1/133345G02F1/1523G02F1/1524G02F1/1533G02F1/155H01B5/14H01B13/00H01J37/3429H01J37/3476G02F2001/1536G02F2001/1555G02F2201/508
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,572,047
App. No.
18/303,815
Granted
Mar 10, 2026
Kind
B2
Abstract

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10 8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Claims (16)

1 . A method of fabricating an electrochromic device, the method comprising:

forming an electrochromic stack over a first electrode layer disposed on a substrate and forming a second electrode layer over the electrochromic stack, wherein the electrochromic stack comprises an electrochromic layer of electrochromic material and a counter electrode layer of counter electrode material, and wherein the first electrode layer comprises a first transparent electronically conductive material and the second electrode layer comprises a second transparent electronically conductive material; and

depositing a defect-mitigating insulating layer to seal a pop-off defect in the electrochromic device;

wherein the defect-mitigating insulating layer comprises a metal oxide, a metal nitride; a metal carbide; a metal oxynitride; a metal oxycarbide, or any combination thereof, and

wherein the metal oxide is selected from the group consisting of aluminum oxide, titanium oxide, tantalum oxide, cerium oxide, zinc oxide, tin oxide, tungsten oxide, oxidized indium tin oxide, and nickel tungsten oxide,

wherein the defect-mitigating insulating layer is deposited in a first process operation after execution of a second process operation that has a propensity to cause ejection of particles from the electrochromic stack, and

wherein the second process operation comprises introducing lithium into the electrochromic stack.

2 . The method of claim 1 , wherein the metal nitride is selected from the group consisting of titanium nitride, aluminum nitride, silicon nitride, tungsten nitride.

3 . The method of claim 1 , wherein the metal carbide is selected from the group consisting of titanium carbide, aluminum carbide, silicon carbide, tantalum carbide, and tungsten carbide.

4 . The method of claim 1 , wherein the metal oxynitride comprises silicon oxynitride.

5 . The method of claim 1 , wherein the defect-mitigating insulating layer is between about 5 nm and 500 nm thick.

6 . The method of claim 1 , wherein the defect-mitigating insulating layer is between about 10 nm and 100 nm thick.

7 . The method of claim 1 , wherein the defect-mitigating insulating layer is deposited within, beneath, or on the electrochromic stack.

8 . The method of claim 1 , wherein the defect-mitigating insulating layer is ionically conductive, and further comprising a second defect-mitigating insulating layer, wherein the second defect-mitigating insulating layer is deposited beneath or in the electrochromic stack.

9 . The method of claim 1 , wherein depositing the defect-mitigating insulating layer prevents electronically conducting layers and/or electrochromically active layers of the electrochromic device from contacting layers of an opposite polarity and creating a short circuit in a region of the pop-off defect.

10 . The method of claim 1 , wherein the lithium comprises lithium metal.

Assignments (3)
MERGER AND CHANGE OF NAME Recorded Dec 19, 2024
From: VIEW, INC.; PVMS MERGER SUB, INC.; VIEW OPERATING CORPORATION
To: VIEW OPERATING CORPORATION
Reel/Frame 069743/0586 →
SECURITY INTEREST Recorded Oct 17, 2023
From: VIEW, INC.
To: CANTOR FITZGERALD SECURITIES
Reel/Frame 065266/0810 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2023
From: KAILASAM, SRIDHAR K.; FRIEDMAN, ROBIN; GILLASPIE, DANE; PRADHAN, ANSHU A.; ROZBICKI, ROBERT; MEHTANI, DISHA
To: VIEW, INC.
Reel/Frame 063393/0965 →
Continuity (7)
Continuation 16947757 · Aug 14, 2020
Division 16509189 · Jul 11, 2019
Continuation 15799694 · Oct 31, 2017
Continuation 14885734 · Oct 16, 2015
Continuation 14601141 · Jan 20, 2015
Continuation 13763505 · Feb 8, 2013
Related Publication 20230314892A1 · Oct 5, 2023
References Cited (400)
US 3897996A · Tsunoda · 1975 [cited by examiner]
US 4293194A · Takahashi · 1981 [cited by applicant]
US 4308316A · Gordon · 1981 [cited by applicant]
US 4419386A · Gordon · 1983 [cited by applicant]
US 4752119A · Ueno et al. · 1988 [cited by applicant]
US 4854675A · Yamazaki et al. · 1989 [cited by applicant]
US 4950888A · Hamada · 1990 [cited by applicant]
US 5124833A · Barton et al. · 1992 [cited by applicant]
US 5133594A · Haas et al. · 1992 [cited by applicant]
US 5147694A · Clarke · 1992 [cited by applicant]
US 5352504A · Boulanger et al. · 1994 [cited by applicant]
US 5699192A · Van Dine et al. · 1997 [cited by applicant]
US 5724175A · Hichwa et al. · 1998 [cited by applicant]
US 5724177A · Ellis, Jr. et al. · 1998 [cited by applicant]
US 5724187A · Varaprasad et al. · 1998 [cited by applicant]
US 5830336A · Schulz · 1998 [cited by applicant]
US 5877936A · Nishitani et al. · 1999 [cited by applicant]
US 5959762A · Bandettini et al. · 1999 [cited by applicant]
US 5995271A · Zieba et al. · 1999 [cited by applicant]
US 6055089A · Schulz et al. · 2000 [cited by applicant]
US 6094292A · Goldner et al. · 2000 [cited by applicant]
US 6176715B1 · Buescher · 2001 [cited by applicant]
US 6284412B1 · Minakata et al. · 2001 [cited by applicant]
US 6407847B1 · Poll et al. · 2002 [cited by applicant]
US 6515787B1 · Westfall et al. · 2003 [cited by applicant]
US 6743524B2 · Schaepkens · 2004 [cited by examiner]
US 6770176B2 · Benson et al. · 2004 [cited by applicant]
US 6822778B2 · Westfall et al. · 2004 [cited by applicant]
US 6870656B2 · Tonar et al. · 2005 [cited by applicant]
US 7265890B1 · Demiryont · 2007 [cited by applicant]
US 7593154B2 · Burdis et al. · 2009 [cited by applicant]
US 7710671B1 · Kwak et al. · 2010 [cited by applicant]
US 7869114B2 · Valentin et al. · 2011 [cited by applicant]
US 8004744B2 · Burdis · 2011 [cited by examiner]
US 8035882B2 · Fanton et al. · 2011 [cited by applicant]
US 8071420B2 · Su et al. · 2011 [cited by applicant]
US 8085460B2 · Finley et al. · 2011 [cited by applicant]
US 8164818B2 · Collins et al. · 2012 [cited by applicant]
US 8164848B2 · Chan et al. · 2012 [cited by applicant]
US 8259380B2 · Valentin et al. · 2012 [cited by applicant]
US 8780432B1 · Nguyen · 2014 [cited by applicant]
US 9007674B2 · Kailasam et al. · 2015 [cited by applicant]
US 9019588B2 · Brown et al. · 2015 [cited by applicant]
US 9102124B2 · Collins et al. · 2015 [cited by applicant]
US 9229291B2 · Kailasam et al. · 2016 [cited by applicant]
US 9356316B2 · Sun et al. · 2016 [cited by applicant]
US 9408303B2 · Hassan et al. · 2016 [cited by applicant]
US 9454053B2 · Strong et al. · 2016 [cited by applicant]
US 9482921B2 · Lamine et al. · 2016 [cited by applicant]
US 9581875B2 · Burdis et al. · 2017 [cited by applicant]
US 9703167B2 · Parker et al. · 2017 [cited by applicant]
US 9921421B2 · Branda et al. · 2018 [cited by applicant]
US 9939704B2 · Patterson et al. · 2018 [cited by applicant]
US 9952481B2 · Rozbicki et al. · 2018 [cited by applicant]
US 9958750B2 · Parker et al. · 2018 [cited by applicant]
US 9995985B2 · Parker et al. · 2018 [cited by applicant]
US 10114265B2 · Strong et al. · 2018 [cited by applicant]
US 10288969B2 · Kailasam et al. · 2019 [cited by applicant]
US 10295880B2 · Dixit et al. · 2019 [cited by applicant]
US 10303032B2 · Brossard et al. · 2019 [cited by applicant]
US 10409130B2 · Parker et al. · 2019 [cited by applicant]
US 10551711B2 · Kozlowski et al. · 2020 [cited by applicant]
US 10781583B2 · Silva · 2020 [cited by applicant]
US 10782583B2 · Bhatnagar et al. · 2020 [cited by applicant]
US 10788723B2 · Rozbicki et al. · 2020 [cited by applicant]
US 10795232B2 · Strong et al. · 2020 [cited by applicant]
US 10802371B2 · Dixit et al. · 2020 [cited by applicant]
US 10969645B2 · Rozbicki et al. · 2021 [cited by applicant]
US 11054711B2 · Shrivastava et al. · 2021 [cited by applicant]
US 11065845B2 · Parker et al. · 2021 [cited by applicant]
US 11086182B2 · Dixit et al. · 2021 [cited by applicant]
US 11426979B2 · Strong et al. · 2022 [cited by applicant]
US 11559852B2 · Dixit et al. · 2023 [cited by applicant]
US 11559970B2 · Strong et al. · 2023 [cited by applicant]
US 11561446B2 · Kailasam et al. · 2023 [cited by applicant]
US 11599003B2 · Kailasam · 2023 [cited by applicant]
US 11668990B2 · Rozbicki et al. · 2023 [cited by applicant]
US 11865632B2 · Dixit et al. · 2024 [cited by applicant]
US 20020004261A1 · Asami et al. · 2002 [cited by applicant]
US 20020075552A1 · Poll et al. · 2002 [cited by applicant]
US 20020149829A1 · Mochizuka et al. · 2002 [cited by applicant]
US 20030117066A1 · Silvernail · 2003 [cited by applicant]
US 20030137712A1 · Westfall et al. · 2003 [cited by applicant]
US 20030179432A1 · Vincent et al. · 2003 [cited by applicant]
US 20030227663A1 · Agrawal et al. · 2003 [cited by applicant]
US 20040042059A1 · Minami et al. · 2004 [cited by applicant]
US 20040121571A1 · Uchikoshi et al. · 2004 [cited by applicant]
US 20040123804A1 · Yamazaki et al. · 2004 [cited by applicant]
US 20040202001A1 · Roberts et al. · 2004 [cited by applicant]
US 20040233537A1 · Agrawal et al. · 2004 [cited by applicant]
US 20040234678A1 · Hirai et al. · 2004 [cited by applicant]
US 20050003737A1 · Montierth et al. · 2005 [cited by applicant]
US 20050082639A1 · Kikuta et al. · 2005 [cited by applicant]
US 20050195488A1 · McCabe et al. · 2005 [cited by applicant]
US 20060018000A1 · Greer · 2006 [cited by applicant]
US 20060033978A1 · Morin et al. · 2006 [cited by applicant]
US 20060098289A1 · McCabe et al. · 2006 [cited by applicant]
US 20060132885A1 · Pichot et al. · 2006 [cited by applicant]
US 20060209383A1 · Burdis et al. · 2006 [cited by applicant]
US 20060278333A1 · Lee et al. · 2006 [cited by applicant]
US 20070002422A1 · O'Shaughnessy · 2007 [cited by applicant]
US 20070097481A1 · Burdis et al. · 2007 [cited by applicant]
US 20070109219A1 · Whitesides et al. · 2007 [cited by applicant]
US 20070138949A1 · Yoshida et al. · 2007 [cited by applicant]
US 20070292606A1 · Demiryont · 2007 [cited by applicant]
US 20080018979A1 · Mahe et al. · 2008 [cited by applicant]
US 20080026166A1 · Pilloy · 2008 [cited by applicant]
US 20080030836A1 · Tonar et al. · 2008 [cited by applicant]
US 20080037128A1 · Knapp · 2008 [cited by applicant]
US 20080099065A1 · Ito et al. · 2008 [cited by applicant]
US 20080143906A1 · Allemand et al. · 2008 [cited by applicant]
US 20080190759A1 · Valentin et al. · 2008 [cited by applicant]
US 20080212189A1 · Baur et al. · 2008 [cited by applicant]
US 20080266642A1 · Burrell et al. · 2008 [cited by applicant]
US 20080304131A1 · Nguyen · 2008 [cited by applicant]
US 20090067031A1 · Piroux et al. · 2009 [cited by applicant]
US 20090148764A1 · Kwak et al. · 2009 [cited by applicant]
US 20090202743A1 · Schaepkens et al. · 2009 [cited by applicant]
US 20090272483A1 · Howes · 2009 [cited by applicant]
US 20090284821A1 · Valentin et al. · 2009 [cited by applicant]
US 20090296190A1 · Anderson et al. · 2009 [cited by applicant]
US 20090303565A1 · Karmhag et al. · 2009 [cited by applicant]
US 20090304912A1 · Kwak et al. · 2009 [cited by applicant]
US 20090304970A1 · Imaizumi et al. · 2009 [cited by applicant]
US 20090316248A1 · Karmhag et al. · 2009 [cited by applicant]
US 20090323161A1 · Fuss et al. · 2009 [cited by applicant]
US 20090323162A1 · Fanton et al. · 2009 [cited by applicant]
US 20100053722A1 · Finley et al. · 2010 [cited by applicant]
US 20100060971A1 · Schwendeman et al. · 2010 [cited by applicant]
US 20100067090A1 · Egerton et al. · 2010 [cited by applicant]
US 20100079844A1 · Kurman et al. · 2010 [cited by applicant]
US 20100165440A1 · Nguyen et al. · 2010 [cited by applicant]
US 20100243427A1 · Kozlowski et al. · 2010 [cited by applicant]
US 20100245973A1 · Wang et al. · 2010 [cited by applicant]
US 20100245991A1 · Ishihara et al. · 2010 [cited by applicant]
US 20100321758A1 · Bugno et al. · 2010 [cited by applicant]
US 20110080629A1 · Neuman et al. · 2011 [cited by applicant]
US 20110080630A1 · Valentin et al. · 2011 [cited by applicant]
US 20110096388A1 · Agrawal et al. · 2011 [cited by applicant]
US 20110128137A1 · Varaprasad et al. · 2011 [cited by applicant]
US 20110148218A1 · Rozbicki · 2011 [cited by applicant]
US 20110151383A1 · Yamashiro et al. · 2011 [cited by applicant]
US 20110181939A1 · Bressand et al. · 2011 [cited by applicant]
US 20110199666A1 · Chun et al. · 2011 [cited by applicant]
US 20110211247A1 · Kozlowski et al. · 2011 [cited by applicant]
US 20110249314A1 · Wang et al. · 2011 [cited by applicant]
US 20110261429A1 · Sbar et al. · 2011 [cited by applicant]
US 20110266137A1 · Wang et al. · 2011 [cited by applicant]
US 20110266138A1 · Wang et al. · 2011 [cited by applicant]
US 20110267673A1 · Agrawal et al. · 2011 [cited by applicant]
US 20110267674A1 · Wang et al. · 2011 [cited by applicant]
US 20110267675A1 · Wang et al. · 2011 [cited by applicant]
US 20120019889A1 · Lamine et al. · 2012 [cited by applicant]
US 20120026573A1 · Collins et al. · 2012 [cited by applicant]
US 20120033287A1 · Friedman et al. · 2012 [cited by applicant]
US 20120038967A1 · Copeland et al. · 2012 [cited by applicant]
US 20120147449A1 · Bhatnagar et al. · 2012 [cited by applicant]
US 20120217346A1 · Eberle et al. · 2012 [cited by applicant]
US 20120218620A1 · Kwak et al. · 2012 [cited by applicant]
US 20120218621A1 · Kwak et al. · 2012 [cited by applicant]
US 20120266945A1 · Letocart et al. · 2012 [cited by applicant]
US 20120275008A1 · Pradhan et al. · 2012 [cited by applicant]
US 20120281268A1 · McCabe et al. · 2012 [cited by applicant]
US 20120327499A1 · Parker et al. · 2012 [cited by applicant]
US 20130003157A1 · Wang et al. · 2013 [cited by applicant]
US 20130033736A1 · McCabe et al. · 2013 [cited by applicant]
US 20130092679A1 · Rozbicki et al. · 2013 [cited by applicant]
US 20130107563A1 · McCabe et al. · 2013 [cited by applicant]
US 20130128342A1 · Mitarai et al. · 2013 [cited by applicant]
US 20130222877A1 · Greer et al. · 2013 [cited by applicant]
US 20130278988A1 · Jack et al. · 2013 [cited by applicant]
US 20130335800A1 · Konkin et al. · 2013 [cited by applicant]
US 20130337603A1 · Steinhauser et al. · 2013 [cited by applicant]
US 20140022621A1 · Kailasam et al. · 2014 [cited by applicant]
US 20140253996A1 · Burdis et al. · 2014 [cited by applicant]
US 20140340731A1 · Strong et al. · 2014 [cited by applicant]
US 20150062688A1 · Friedman et al. · 2015 [cited by applicant]
US 20150092260A1 · Parker et al. · 2015 [cited by applicant]
US 20150131140A1 · Kailasam et al. · 2015 [cited by applicant]
US 20150153622A1 · Kalweit et al. · 2015 [cited by applicant]
US 20150253642A1 · Kalweit et al. · 2015 [cited by applicant]
US 20150362816A1 · Strong et al. · 2015 [cited by applicant]
US 20160077257A1 · Tatemura et al. · 2016 [cited by applicant]
US 20160097960A1 · Dixit et al. · 2016 [cited by applicant]
US 20160103379A1 · Kozlowski et al. · 2016 [cited by applicant]
US 20160114523A1 · Luten et al. · 2016 [cited by applicant]
US 20160138328A1 · Behmke et al. · 2016 [cited by applicant]
US 20160141258A1 · Jain et al. · 2016 [cited by applicant]
US 20160199936A1 · Luten et al. · 2016 [cited by applicant]
US 20160209723A1 · Rozbicki · 2016 [cited by applicant]
US 20160334688A1 · Tran et al. · 2016 [cited by applicant]
US 20170066679A1 · Yeh · 2017 [cited by applicant]
US 20170102601A1 · Luten et al. · 2017 [cited by applicant]
US 20170115544A1 · Parker et al. · 2017 [cited by applicant]
US 20170176831A1 · Dixit et al. · 2017 [cited by applicant]
US 20170184938A1 · Bergh et al. · 2017 [cited by applicant]
US 20170219903A1 · Strong et al. · 2017 [cited by applicant]
US 20170219906A1 · Garcia et al. · 2017 [cited by applicant]
US 20170279155A1 · Sun et al. · 2017 [cited by applicant]
US 20180095337A1 · Rozbicki et al. · 2018 [cited by applicant]
US 20180173071A1 · Mathew et al. · 2018 [cited by applicant]
US 20180210307A1 · Parker et al. · 2018 [cited by applicant]
US 20180259822A1 · Dixit et al. · 2018 [cited by applicant]
US 20190079365A1 · Sarrach et al. · 2019 [cited by applicant]
US 20190086756A1 · Dixit et al. · 2019 [cited by applicant]
US 20190107764A1 · Kailasam et al. · 2019 [cited by applicant]
US 20190155120A1 · Li et al. · 2019 [cited by applicant]
US 20190219881A1 · Shrivastava et al. · 2019 [cited by applicant]
US 20190324341A1 · Tonar et al. · 2019 [cited by applicant]
US 20190331977A1 · Rozbicki et al. · 2019 [cited by applicant]
US 20190346732A1 · Parker et al. · 2019 [cited by applicant]
US 20200201132A1 · Kailasam et al. · 2020 [cited by applicant]
US 20200233278A1 · Kailasam · 2020 [cited by applicant]
US 20200379310A1 · Rozbicki et al. · 2020 [cited by applicant]
US 20200384738A1 · Strong et al. · 2020 [cited by applicant]
US 20210001426A1 · Dixit et al. · 2021 [cited by applicant]
US 20210018810A1 · Rozbicki et al. · 2021 [cited by applicant]
US 20210191214A1 · Rozbicki et al. · 2021 [cited by applicant]
US 20210247654A1 · Mogensen et al. · 2021 [cited by applicant]
US 20210394489A1 · Strong et al. · 2021 [cited by applicant]
US 20220001651A1 · Cabrera · 2022 [cited by applicant]
US 20220032584A1 · Parker et al. · 2022 [cited by applicant]
US 20220050348A1 · Dixit et al. · 2022 [cited by applicant]
US 20220080706A1 · Strong et al. · 2022 [cited by applicant]
US 20220241893A1 · Dixit et al. · 2022 [cited by applicant]
US 20220252952A1 · Rozbicki et al. · 2022 [cited by applicant]
US 20230029868A1 · Ponce et al. · 2023 [cited by applicant]
US 20230324754A1 · Rozbicki et al. · 2023 [cited by applicant]
US 20240082949A1 · Dixit et al. · 2024 [cited by applicant]
CN 1350326A · 2002 [cited by applicant]
CN 1482509A · 2004 [cited by applicant]
CN 1492274A · 2004 [cited by applicant]
CN 1537257A · 2004 [cited by applicant]
CN 1620678A · 2005 [cited by applicant]
CN 1688923A · 2005 [cited by applicant]
CN 1739057A · 2006 [cited by applicant]
CN 1808271A · 2006 [cited by applicant]
CN 1990820A · 2007 [cited by applicant]
CN 1993648A · 2007 [cited by applicant]
CN 101276079A · 2008 [cited by applicant]
CN 101322069A · 2008 [cited by applicant]
CN 101421666A · 2009 [cited by applicant]
CN 101438205A · 2009 [cited by applicant]
CN 101535885A · 2009 [cited by applicant]
CN 102057323A · 2011 [cited by applicant]
CN 101438205B · 2011 [cited by applicant]
CN 102253559A · 2011 [cited by applicant]
CN 102388340A · 2012 [cited by applicant]
CN 102460766A · 2012 [cited by applicant]
CN 103261960A · 2013 [cited by applicant]
CN 104011588A · 2014 [cited by applicant]
CN 104321696A · 2015 [cited by applicant]
CN 104364706A · 2015 [cited by applicant]
CN 104834145A · 2015 [cited by applicant]
CN 105324708A · 2016 [cited by applicant]
CN 107533267A · 2018 [cited by applicant]
EP 0413580A1 · 1991 [cited by applicant]
EP 0725944A4 · 1995 [cited by applicant]
EP 1382994A2 · 2004 [cited by applicant]
EP 2078980A1 · 2009 [cited by applicant]
EP 2791733A1 · 2014 [cited by applicant]
EP 3118912A1 · 2017 [cited by applicant]
EP 3238253A2 · 2017 [cited by applicant]
EP 3617788A1 · 2020 [cited by applicant]
FR 2669122A1 · 1992 [cited by examiner]
FR 2969771A1 · 2012 [cited by applicant]
JP S58126577A · 1983 [cited by applicant]
JP S58163921A · 1983 [cited by applicant]
JP S5961820A · 1984 [cited by applicant]
JP S5994744A · 1984 [cited by applicant]
JP H02151838A · 1990 [cited by applicant]
JP H0728099A · 1995 [cited by applicant]
JP 2001051307A · 2001 [cited by applicant]
JP 2001051308A · 2001 [cited by applicant]
JP 2001133816A · 2001 [cited by applicant]
JP 2002076390A · 2002 [cited by applicant]
JP 2002507781A · 2002 [cited by applicant]
JP 2006252886A · 2006 [cited by applicant]
JP 2006286412A · 2006 [cited by applicant]
JP 2007108750A · 2007 [cited by applicant]
JP 2008542578A · 2008 [cited by applicant]
JP 2009169229A · 2009 [cited by applicant]
JP 2011128504A · 2011 [cited by applicant]
JP 2011526378A · 2011 [cited by applicant]
JP 2012058515A · 2012 [cited by applicant]
JP 2012523018A · 2012 [cited by applicant]
JP 2012194412A · 2012 [cited by applicant]
JP 2013062133A · 2013 [cited by applicant]
JP 2013149433A · 2013 [cited by applicant]
KR 100302828B1 · 2002 [cited by applicant]
KR 20040031685A · 2004 [cited by applicant]
KR 20060122491A · 2006 [cited by applicant]
KR 20070055494A · 2007 [cited by applicant]
KR 20100024174A · 2010 [cited by applicant]
KR 20120007471A · 2012 [cited by applicant]
TW 282613B · 1996 [cited by applicant]
TW 201013286A · 2010 [cited by applicant]
TW 201029838A · 2010 [cited by applicant]
TW 201211664A · 2012 [cited by applicant]
TW 201215981A · 2012 [cited by applicant]
TW 201222119A · 2012 [cited by applicant]
TW 201342509A · 2013 [cited by applicant]
TW 201344874A · 2013 [cited by applicant]
TW 201435464A · 2014 [cited by applicant]
WO WO9415247A1 · 1994 [cited by applicant]
WO WO9530495A1 · 1995 [cited by applicant]
WO WO03037056A1 · 2003 [cited by applicant]
WO WO2004026633A2 · 2004 [cited by applicant]
WO WO2006014591A2 · 2006 [cited by applicant]
WO WO2006021707A1 · 2006 [cited by applicant]
WO WO2007103342A2 · 2007 [cited by applicant]
WO WO2008150851A1 · 2008 [cited by applicant]
WO WO2010014648A1 · 2010 [cited by applicant]
WO WO2010093703A1 · 2010 [cited by applicant]
WO WO2010119228A1 · 2010 [cited by applicant]
WO WO2011028254A2 · 2011 [cited by applicant]
WO WO2011050291A2 · 2011 [cited by applicant]
WO WO2011112882A1 · 2011 [cited by applicant]
WO WO2011137080A1 · 2011 [cited by applicant]
WO WO2012018688A1 · 2012 [cited by applicant]
WO WO2012078634A2 · 2012 [cited by applicant]
WO WO2012138281A1 · 2012 [cited by applicant]
WO WO2012174260A2 · 2012 [cited by applicant]
WO WO2013163107A1 · 2013 [cited by applicant]
WO WO2014025913A1 · 2014 [cited by applicant]
WO WO2014099974A1 · 2014 [cited by applicant]
WO WO2014124303A2 · 2014 [cited by applicant]
WO WO2014152493A1 · 2014 [cited by applicant]
WO WO2014191770A1 · 2014 [cited by applicant]
WO WO2014201287A1 · 2014 [cited by applicant]
WO WO2014205014A1 · 2014 [cited by applicant]
WO WO2015103433A1 · 2015 [cited by applicant]
WO WO2016004373A1 · 2016 [cited by applicant]
WO WO2016029044A1 · 2016 [cited by applicant]
WO WO2016105549A2 · 2016 [cited by applicant]
WO WO2016126460A2 · 2016 [cited by applicant]
WO WO2016154064A1 · 2016 [cited by applicant]
WO WO2017192881A1 · 2017 [cited by applicant]
WO WO2018039080A1 · 2018 [cited by applicant]
WO WO2019178540A1 · 2019 [cited by applicant]
WO WO2021118941A1 · 2021 [cited by applicant]
Abdullah, et al., The properties of ITO/arc-ZnO passivating layer for TCO conducting substrate deposited by RF magnetron sputtering, Advanced Materials Research, vol. 832, 2014, pp. 579-584. [cited by applicant]
Al Shakhs, M. et al., “Boosting the transparency of thin layers by coatings of opposing susceptibility: how metals help see through dielectrics,” Scientific Reports (www.nature.com); 6:20659; DOI: 10.1038/srep20659, Feb… [cited by applicant]
Australian Examination Report dated Feb. 16, 2017 in AU Application No. 2014214738. [cited by applicant]
Australian Examination Report dated Jul. 10, 2018 in AU Application No. 2017204525. [cited by applicant]
Australian Office Action dated Jun. 30, 2017 issued in AU Application No. 2014214738. [cited by applicant]
CA Office Action dated Jul. 18, 2022 in Application No. CA3103961. [cited by applicant]
CA Office Action dated Dec. 1, 2022, in Application No. CA2980477. [cited by applicant]
CA Office Action dated Mar. 7, 2022, in Application No. 2,980,477. [cited by applicant]
Canadian Office Action dated Apr. 26, 2021 issued in CA Application No. 2,899,607. [cited by applicant]
Canadian Office Action dated Feb. 24, 2020 issued in CA Application No. 2,899,607. [cited by applicant]
Canadian Office Action dated Nov. 12, 2020 issued in CA Application No. 2,899,607. [cited by applicant]
Chinese Office Aciton dated Dec. 23, 2020 issued in CN Application No. 201811008514.6. [cited by applicant]
Chinese Office Aciton dated Feb. 2, 2018 issued in CN Application No. 201480010617.X. [cited by applicant]
Chinese Office Aciton dated May 19, 2017 issued in Application No. Cn 201480010617.X. [cited by applicant]
Chinese Office Action dated Apr. 9, 2020 in CN Application No. 201680023096.0. [cited by applicant]
Chinese Office Action dated Jun. 16, 2021 in CN Application No. 201680023096.0. [cited by applicant]
CN office action dated Dec. 6, 2021, in application No. 201680023096.0 with English translation. [cited by applicant]
CN Office Action dated Apr. 27, 2022, in Application No. CN201780057293.9 with English translation. [cited by applicant]
CN Office Action dated Jul. 5, 2022, in Application No. CN201680023096.0 with English translation. [cited by applicant]
CN Office Action dated Jul. 19, 2021, issued in CN Application No. 201811008514.6. [cited by applicant]
CN Office Action dated Jul. 28, 2021, in CN Application No. 201780057293.9. [cited by applicant]
CN Office Action dated Oct. 10, 2022, in Application No. CN201780057293.9, with EnglishTranslation. [cited by applicant]
Crupi, I., et al., “Optimization of ZnO:Al/Ag/ZnO:Al structures for ultra-thin high-performance transparent conductive electrodes,” vol. 520, No. 13, Apr. 30, 2012, pp. 4432-4435. [cited by applicant]
EP Extended Search Report dated Feb. 25, 2020 in EP Application No. 17844188.7. [cited by applicant]
EP Office Action dated Jun. 9, 2022, in Application No. EP19714068.4. [cited by applicant]
EP office action dated Jun. 21, 2023, in application No. EP20200757159. [cited by applicant]
EP Office Action dated Jun. 26, 2023, in Application No. EP19714068.4. [cited by applicant]
EP Office Action dated May 14, 2021 in EP Application No. 17844188.7. [cited by applicant]
EP Search Report dated Nov. 29, 2021, in Application No. EP21184089.7. [cited by applicant]
European Office Action dated Aug. 20, 2020 in EP Application No. 19183372.2. [cited by applicant]
European Office Action dated Feb. 28, 2020 in EP Application No. 19183372.2. [cited by applicant]
European Office Action dated Jan. 22, 2019 in EP Application No. 14749144.3. [cited by applicant]
European Office Action dated Jun. 14, 2021 in EP Application No. 16769458.7. [cited by applicant]
European Office Action dated May 24, 2022, in EP Application No. 16769458.7. [cited by applicant]
European Office Action dated Sep. 5, 2019 in EP Application No. 19183372.2. [cited by applicant]
European Search Report dated Aug. 21, 2019 in EP Application No. 19183372.2. [cited by applicant]
Extended European Search Report dated Aug. 12, 2016, issued in EP Application No. 14749144.3. [cited by applicant]
Extended European Search Report dated Oct. 19, 2018 in EP Application No. 16769458.7. [cited by applicant]
Filatova, E. O. et al., “Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/TiO2/TCO/metal assemblies,” New Journal of Physics 16 (2014) 113014. [cited by applicant]
Guillen, C. et al., “TCO/metal/TCO structures for energy and flexible electronics,” Thin Solid Films 520, 2011, pp. 1-17. [cited by applicant]
IN First Examination Report dated Jun. 29, 2021, in the IN Application No. 202038032392. [cited by applicant]
Indian Office Action dated Oct. 30, 2019 in IN Application No. 2583/KOLNP/2015. [cited by applicant]
International Preliminary Report on Patentability dated Aug. 20, 2015, issued in PCT/US2014/015374. [cited by applicant]
International Preliminary Report on Patentability dated Feb. 10, 2022 issued in Application No. PCT/US2020/044337. [cited by applicant]
International Preliminary Report on Patentability dated Mar. 7, 2019 in PCT/US2017/047664. [cited by applicant]
International Preliminary Report on Patentability dated Oct. 1, 2020 in PCT/US19/22580. [cited by applicant]
International Preliminary Report on Patentability dated Oct. 5, 2017 issued in PCT/US16/23293. [cited by applicant]
International Search Report and Written Opinion dated Jul. 29, 2016 issued in PCT/US16/23293. [cited by applicant]
International Search Report and Written Opinion dated May 24, 2019 in PCT/US19/22580. [cited by applicant]
International Search Report and Written Opinion dated Nov. 27, 2014, issued in PCT/US2014/015374. [cited by applicant]
International Search Report and Written Opinion (ISA/KR) dated Dec. 13, 2017 in PCT/US2017/047664. [cited by applicant]
Jager, T. et al., “Thin films of SnO2:F by reactive magnetron sputtering with rapid thermal post-annealing,” vol. 553, Feb. 28, 2014, pp. 21-25. [cited by applicant]
Korean Notice of Refusal dated Dec. 1, 2020 in KR Application No. 10-2015-7022800. [cited by applicant]
Korean Office Action dated Mar. 24, 2021 in KR Application No. 10-2020-7038114. [cited by applicant]
Korean Office Action dated Mar. 5, 2020 in KR Application No. 10-2015-7022800. [cited by applicant]
KR Office action dated Apr. 4, 2022 in Application No. KR1020207038114 with English translation. [cited by applicant]
KR Office Action dated Jan. 19, 2022, in Application No. KR1020207038114 with English translation. [cited by applicant]
Macleod, H.A., “Thin-film optical filters, 3rd Edition, (Chapter 15: Characteristics of thin-film dielectric materials),” 1986, Bristol, UK, pp. 622-627. [cited by applicant]
Rubin, M., “Optical properties of soda lime silica glasses,” Solar Energy Materials, vol. 12, No. 4, 1985, pp. 275-288. [cited by applicant]