Electronic device and method of operating the same

1. A memory device comprising:

memory cells connected to a selected word line among a plurality of word lines;

a peripheral circuit configured to perform a first program operation of programming a threshold voltage of each of memory cells that are to be programmed among the memory cells to a pre-threshold voltage less than a target threshold voltage, and perform a second program operation of programming the threshold voltage of each of the memory cells which are to be programmed to the target threshold voltage after the first program operation is performed; and

control logic configured to control the peripheral circuit such that a first pass voltage and a second pass voltage are sequentially applied to adjacent word lines adjacent to the selected word line, when a program voltage is applied to the selected word line, in the first program operation and the second program operation,

wherein a magnitude of the second pass voltage applied to the adjacent word lines in the first program operation is greater than a magnitude of the second pass voltage applied to the adjacent word lines in the second program operation.

2. The memory device of claim 1 , wherein the control logic is configured to control the peripheral circuit to perform the first program operation on memory cells connected to a first selected word line and thereafter perform the first program operation on memory cells connected to a second selected word line before performing the second program operation on memory cells connected to the first selected word line.

3. The memory device of claim 2 , wherein the control logic is further configured to control the peripheral circuit to perform the first program operation on memory cells connected to a third selected word line after performing the second program operation on the memory cells connected to the first selected word line and before performing the second program operation on the memory cells connected to the second selected word line.

4. The memory device of claim 1 , wherein a time period for which the second pass voltage is applied to the adjacent word lines in the first program operation is longer than a time period for which the second pass voltage is applied to the adjacent word lines in the second program operation.

5. The memory device of claim 4 , wherein in the first program operation, a time period for which the second pass voltage is applied to the adjacent word lines is longer than a time period for which the first pass voltage is applied to the adjacent word lines, and

in the second program operation, a time period for which the second pass voltage is applied to the adjacent word lines is shorter than a time period which the first pass voltage is applied to the adjacent word lines.

6. The memory device of claim 1 , wherein the magnitude of the second pass voltage applied to the adjacent word lines in the first program operation and the magnitude of the second pass voltage applied to the adjacent word lines in the second program operation are greater than a magnitude of the first pass voltage.

7. A method of operating a memory device performing a program operation on memory cells connected to a selected word line among a plurality of word lines, the method comprising:

performing a first program operation of programming a threshold voltage of each of memory cells that are to be programmed among memory cells connected to the selected word line to a pre-threshold voltage less than a target threshold voltage; and

performing a second program operation of programming the threshold voltage of each of the memory cells which are to be programmed to the target threshold voltage after the first program operation is performed,

wherein each of the first program operation and the second program operation includes applying a program voltage to the selected word line and sequentially applying a first pass voltage and a second pass voltage to adjacent word lines adjacent to the selected word line, and

wherein a magnitude of the second pass voltage applied to the adjacent word lines in the first program operation is greater than a magnitude of the second pass voltage applied to the adjacent word lines in the second program operation.

8. The method of claim 7 , further comprising performing the second program operation on the memory cells connected to a word line selected before the selected word line is selected, after the first program operation on the memory cells connected to the selected word line is performed.

9. The method of claim 8 , further comprising performing the first program operation on memory cells connected to a word line to be selected next to the selected word line, after the second program operation on the memory cells connected to the word line selected before the selected word line is selected is performed.

10. The method of claim 7 , wherein the magnitude of the second pass voltage applied to the adjacent word lines in the first program operation and the magnitude of the second pass voltage applied to the adjacent word lines in the second program operation are greater than a magnitude of the first pass voltage.

11. The method of claim 7 , wherein a time period for which the second pass voltage is applied to the adjacent word lines in the first program operation is longer than a time period for which the second pass voltage is applied to the adjacent word lines in the second program operation.

12. The method of claim 11 , wherein in the first program operation, a time period for which the second pass voltage is applied to the adjacent word lines is longer than a time period for which the first pass voltage is applied to the adjacent word lines, and

in the second program operation, a time period for which the second pass voltage is applied to the adjacent word lines is shorter than a time period for which the first pass voltage is applied to the adjacent word lines.

13. A memory device comprising:

memory cells connected to a selected word line among a plurality of word lines;

a peripheral circuit configured to perform a first program operation of programming a threshold voltage of each of memory cells that are to be programmed among the memory cells to a pre-threshold voltage less than a target threshold voltage, and perform a second program operation of programming the threshold voltage of each of the memory cells, which are to be programmed, to the target threshold voltage after the first program operation is performed; and

control logic configured to control the peripheral circuit to apply a program voltage to the selected word line and apply a pass voltage to adjacent word lines adjacent to the selected word line in the first program operation, and apply the program voltage to the selected word line and sequentially apply a first pass voltage and a second pass voltage to the adjacent word lines in the second program operation,

wherein a magnitude of the second pass voltage applied to the adjacent word lines in the first program operation is greater than or equal to a magnitude of the second pass voltage applied to the adjacent word lines in the second program operation.

14. The memory device of claim 13 , wherein the control logic is configured to control the peripheral circuit to perform the first program operation on memory cells connected to a first selected word line and thereafter perform the first program operation on memory cells connected to a second selected word line before performing the second program operation on memory cells connected to the first selected word line.

15. The memory device of claim 14 , wherein the control logic is further configured to control the peripheral circuit to perform the first program operation on memory cells connected to a third selected word line after performing the second program operation on the memory cells connected to the first selected word line and before performing the second program operation on the memory cells connected to the second selected word line.

16. The memory device of claim 13 , wherein the magnitude of the second pass voltage applied to the adjacent word lines in the first program operation and the magnitude of the second pass voltage applied to the adjacent word lines in the second program operation are greater than a magnitude of the first pass voltage.