SINGLE PHOTON DETECTION ELEMENT, ELECTRONIC DEVICE, AND LiDAR DEVICE
Disclosed is a single photon detection device comprises a first well, a second well provided on the first well, a heavily doped region provided on the second well, and a contact facing the heavily doped region. The first well, the second well, and the contact have a first conductive type. The heavily doped region has a second conductive type that is different from the first conductive type. The region between the heavily doped region and the contact consist of semiconductor materials.
1 . A single photon detection device comprising:
a first well;
a second well provided on the first well;
a heavily doped region provided on the second well; and
a contact facing the heavily doped region,
wherein the first well, the second well, and the contact have a first conductive type,
wherein the heavily doped region has a second conductive type that is different from the first conductive type,
the region between the heavily doped region and the contact consist of semiconductor materials.
2 . The single photon detection device of claim 1 , wherein the distance between the heavily doped region and the contact is 0.2 ˜2.5 .
3 . The single photon detection device of claim 1 , further comprising:
a guard ring provided between the heavily doped region and the contact,
wherein the guard ring has a second conductive type and has a doping concentration lower than the heavily doped region.
4 . The single photon detection device of claim 3 , wherein the guard ring contacts with the heavily doped region.
5 . The single photon detection device of claim 3 , wherein the guard ring extends to a side surface of the second well.
6 . The single photon detection device of claim 3 , wherein a bottom surface of the guard ring is located at a depth between a bottom surface and an upper surface of the second well.
7 . The single photon detection device of claim 3 , wherein a bottom surface of the guard ring is located at the same depth as a bottom surface of the second well.
8 . The single photon detection device of claim 3 , wherein a bottom surface of the second well is located at a depth between an upper surface and a bottom surface of the guard ring.
9 . The single photon detection device of claim 3 , wherein the first well extends to a region between the guard ring and the contact.
10 . The single photon detection device of claim 3 , further comprising an isolation region provided on the opposite side of the guard ring with the contact interposed therebetween.
11 . The single photon detection device of claim 1 , wherein the heavily doped region protrudes from a side of the second well.
12 . The single photon detection device of claim 1 , wherein a side of the heavily doped region and a side of the second well forms a coplanar.
13 . A electronic device comprising:
a single photon detection device including a first well, a second well provided on the first well, a heavily doped region provided on the second well, and a contact facing the heavily doped region,
wherein the first well, the second well, and the contact have a first conductive type,
wherein the heavily doped region has a second conductive type that is different from the first conductive type,
wherein a region between the heavily doped region and the contact consist of semiconductor materials.
14 . A LiDAR device comprising:
an electronic device including a single photon detection element,
wherein the single photon detection element includes a first well, a second well provided on the first well, a heavily doped region provided on the second well, and a contact facing the heavily doped region,
wherein the first well, the second well, and the contact have a first conductive type,
wherein the heavily doped region has a second conductive type that is different from the first conductive type,
wherein the region between the heavily doped region and the contact consist of semiconductor materials.